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公开(公告)号:US20240363772A1
公开(公告)日:2024-10-31
申请号:US18679626
申请日:2024-05-31
申请人: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. , Brandenburgische Technische Universität (BTU) Cottbus-Senftenberg, Körperschaft des öffentichen Rech
发明人: Lion AUGEL , Jens KNOBBE
IPC分类号: H01L31/0232 , H01L31/0352 , H01L31/108 , H01L31/18
CPC分类号: H01L31/02327 , H01L31/035281 , H01L31/1085 , H01L31/1804
摘要: Embodiments according to the present invention include an apparatus for absorbing electromagnetic radiation, including a semiconductor substrate with a main side and a trench structure introduced into the main side and including at least one trench in the semiconductor substrate, wherein each trench of the trench structure comprises a trench floor area, and wherein the semiconductor substrate is transparent for the electromagnetic radiation. The apparatus further includes a metal material arranged in the trench floor area, wherein, together with the semiconductor substrate, the metal material provides a Schottky junction configured for absorbing the electromagnetic radiation, and a filling structure, which fills the trench and forms a common surface with the main side. Moreover, the apparatus includes a reflector arranged at the common surface and configured to at least partially reflect the electromagnetic radiation received by the semiconductor substrate in the direction of the metal material.
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公开(公告)号:US20240361519A1
公开(公告)日:2024-10-31
申请号:US18763651
申请日:2024-07-03
发明人: Mizuki SHIRAO , Ryota TAKEMURA , Junichi SUZUKI , Nobuo OHATA
IPC分类号: G02B6/12 , H01L31/0232 , H01L31/0304 , H01L31/105
CPC分类号: G02B6/12002 , H01L31/02325 , H01L31/03046 , H01L31/105
摘要: An optical receiver includes: a support base; a waveguide-type light receiving element fixed to a surface of the support base; and an optical circuit element fixed to the surface of the support base, wherein the waveguide-type light receiving element includes: a semi-insulating semiconductor substrate; a light absorbing layer formed on one main surface of the semiconductor substrate and has a pair of joint surfaces perpendicular to the one main surface of the semiconductor substrate and an incident end face on which light is incident and which has facing end sides of the joint surfaces as a pair of opposite sides, the incident end face having a layer thickness longer than a layer width; an n-type semiconductor layer joined to one of the joint surfaces of the light absorbing layer, and a p-type semiconductor layer joined to the other of the joint surfaces of the light absorbing layer.
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公开(公告)号:US12132127B2
公开(公告)日:2024-10-29
申请号:US17484342
申请日:2021-09-24
IPC分类号: H01L31/0232 , H01L31/0304 , H01L31/0392 , H01L31/0445 , H01L31/0687 , H01L31/0693 , H01L31/18
CPC分类号: H01L31/02327 , H01L31/03046 , H01L31/0392 , H01L31/03926 , H01L31/0445 , H01L31/0687 , H01L31/0693 , H01L31/1844 , H01L31/1896 , Y02E10/52 , Y02E10/544
摘要: There is disclosed ultrahigh-efficiency single- and multi-junction thin-film solar cells. This disclosure is also directed to a substrate-damage-free epitaxial lift-off (“ELO”) process that employs adhesive-free, reliable and lightweight cold-weld bonding to a substrate, such as bonding to plastic or metal foils shaped into compound parabolic metal foil concentrators. By combining low-cost solar cell production and ultrahigh-efficiency of solar intensity-concentrated thin-film solar cells on foil substrates shaped into an integrated collector, as described herein, both lower cost of the module as well as significant cost reductions in the infrastructure is achieved.
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公开(公告)号:US12130180B2
公开(公告)日:2024-10-29
申请号:US17887716
申请日:2022-08-15
发明人: Viktor Gruev
IPC分类号: G01J3/28 , G01J4/04 , H01L27/146 , H01L31/0232 , H01L31/101
CPC分类号: G01J3/2803 , G01J3/2823 , G01J4/04 , H01L27/14647 , H01L31/02327 , H01L31/1013 , G01J2003/2806 , G01J2003/2826
摘要: An image sensor capable of recording both spectral and polarization properties of light using a single chip device includes an at least 2048 by 2048 array of superpixels. Each superpixel includes an array of spectral pixels, and an adjacent array of polarization pixels. Each spectral pixel includes a spectral filter and a stack of photodiodes, where each photodiode has a different quantum efficiency and is, therefore, sensitive to a different wavelength of light passed by the spectral filter. Each polarization pixel includes a polarization filter and a stack of photodiodes, similar to the spectral pixel photodiode stacks.
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公开(公告)号:US12125931B2
公开(公告)日:2024-10-22
申请号:US18689434
申请日:2021-10-12
发明人: Yuchun Zhang , Shudong Zhong
IPC分类号: H01L31/0725 , H01L31/0216 , H01L31/0224 , H01L31/0232 , H01L31/028 , H01L31/043 , H01L31/056
CPC分类号: H01L31/0725 , H01L31/02168 , H01L31/022466 , H01L31/02327 , H01L31/028 , H01L31/043 , H01L31/056
摘要: A tandem solar cell is provided. The tandem solar cell includes: a light absorbing layer group, including an excitation layer, a first electron transport layer group provided on a first side of the excitation layer and a first hole transport layer group provided on a second side of the excitation layer; a heterojunction layer group, where the heterojunction layer group includes a first side being a second electron transport layer in contact with the first hole transport layer group, and a second side being a second hole transport layer; a reflection layer is provided on a side of the second hole transport layer; and the reflection layer reflects sunlight irradiated thereon through the light absorbing layer group and the heterojunction layer group into the tandem solar cell.
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公开(公告)号:US12125865B2
公开(公告)日:2024-10-22
申请号:US17464550
申请日:2021-09-01
申请人: Apple Inc.
IPC分类号: H01L31/00 , G01J5/0808 , H01L27/146 , H01L31/0232
CPC分类号: H01L27/14625 , G01J5/0808 , H01L27/1464 , H01L27/14649 , H01L31/02327
摘要: An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.
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公开(公告)号:US12123974B2
公开(公告)日:2024-10-22
申请号:US17250340
申请日:2019-07-04
发明人: Ryota Watanabe
IPC分类号: G01S7/481 , H01L31/02 , H01L31/0216 , H01L31/0232
CPC分类号: G01S7/4811 , H01L31/02005 , H01L31/02164 , H01L31/02327
摘要: The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged near the first voltage application portion, and a second charge detection portion arranged near the second voltage application portion, and each of the first voltage application portion and the second voltage application portion is covered with an insulating film in the semiconductor layer. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.
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公开(公告)号:US12123744B2
公开(公告)日:2024-10-22
申请号:US17436171
申请日:2020-02-12
发明人: Sho Nishida , Kenta Endo , Kei Nakagawa , Takao Tanikame
IPC分类号: G01C3/06 , G01C3/08 , G01S7/4914 , G01S7/4915 , G01S17/894 , G01S17/931 , H01L31/0203 , H01L31/0216 , H01L31/0232 , H01L31/107
CPC分类号: G01C3/06 , G01S7/4914 , G01S7/4915 , G01S17/894 , G01S17/931 , H01L31/0203 , H01L31/02164 , H01L31/0232 , H01L31/107 , G01C3/08
摘要: A distance measuring device according to the present disclosure includes: a light-receiving section including a first light-receiving pixel and a second light-receiving pixel that are configured to detect light, and a light-shielded pixel that is light-shielded, the first light-receiving pixel, the light-shielded pixel, and the second light-receiving pixel being disposed in a first direction in this order; and a processor that is configured to measure a distance to a measurement object on the basis of a detection result in the first light-receiving pixel and a detection result in the second light-receiving pixel.
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公开(公告)号:US12107175B2
公开(公告)日:2024-10-01
申请号:US17572813
申请日:2022-01-11
发明人: Ming-Hung Hsieh
IPC分类号: H01L23/495 , H01L25/16 , H01L31/0216 , H01L31/0232 , H01L31/102 , H10B99/00
CPC分类号: H01L31/02165 , H01L25/167 , H01L31/02327 , H01L31/102 , H10B99/00
摘要: An optical semiconductor device with cascade vias is disclosed. The semiconductor device a logic die having a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and having a memory cell area and a memory peripheral area; a first inter-die via positioned in the memory peripheral area; a landing pad positioned on the first inter-die via; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area. The first inter-die via and the first intra-die via are electrically coupled through the landing pad in a cascade manner.
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公开(公告)号:US12107108B2
公开(公告)日:2024-10-01
申请号:US17739971
申请日:2022-05-09
申请人: Aeluma, Inc.
发明人: Jonathan Klamkin
IPC分类号: H01L27/146 , G01S7/481 , G01S7/4863 , G01S17/42 , G01S17/88 , G01S17/89 , H01L23/00 , H01L31/0304 , H01L31/103 , H01L31/105 , H01L31/107 , H01L31/02 , H01L31/0216 , H01L31/0232
CPC分类号: H01L27/14632 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/42 , G01S17/88 , G01S17/89 , H01L27/14694 , H01L31/0304 , H01L31/103 , H01L31/105 , H01L31/1075 , G01S7/4815 , H01L24/08 , H01L27/14607 , H01L27/14634 , H01L27/14636 , H01L27/14645 , H01L27/14687 , H01L31/02019 , H01L31/02161 , H01L31/02162 , H01L31/02327 , H01L2224/08145
摘要: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).
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