OPTICAL RECEIVER
    2.
    发明公开
    OPTICAL RECEIVER 审中-公开

    公开(公告)号:US20240361519A1

    公开(公告)日:2024-10-31

    申请号:US18763651

    申请日:2024-07-03

    摘要: An optical receiver includes: a support base; a waveguide-type light receiving element fixed to a surface of the support base; and an optical circuit element fixed to the surface of the support base, wherein the waveguide-type light receiving element includes: a semi-insulating semiconductor substrate; a light absorbing layer formed on one main surface of the semiconductor substrate and has a pair of joint surfaces perpendicular to the one main surface of the semiconductor substrate and an incident end face on which light is incident and which has facing end sides of the joint surfaces as a pair of opposite sides, the incident end face having a layer thickness longer than a layer width; an n-type semiconductor layer joined to one of the joint surfaces of the light absorbing layer, and a p-type semiconductor layer joined to the other of the joint surfaces of the light absorbing layer.

    Light-receiving element and distance-measuring module

    公开(公告)号:US12123974B2

    公开(公告)日:2024-10-22

    申请号:US17250340

    申请日:2019-07-04

    发明人: Ryota Watanabe

    摘要: The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged near the first voltage application portion, and a second charge detection portion arranged near the second voltage application portion, and each of the first voltage application portion and the second voltage application portion is covered with an insulating film in the semiconductor layer. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.