摘要:
A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.
摘要:
The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
摘要:
An electromagnetic radiation detection device comprises a matrix having a plurality of N rows divided into a plurality of M columns of cells, each cell comprising a plurality of diode segments responsive to electromagnetic radiation incident on said device. A scan driver provides a plurality of N scan line signals to respective rows of said matrix, each for enabling charge values from cells of a selected row of said matrix to be read. A reader reads a plurality of M variable charge value signals from respective columns of said matrix, each corresponding to a cell within a selected row of said matrix. Each diode segment is connected to a drive voltage sufficient to operate each diode segment in avalanche multiplication Geiger mode; and connected in series with an avalanche quenching resistor to said reader.
摘要:
Provided is a solar cell comprising a first electrode; a second electrode; a perovskite photoabsorber layer located between the first electrode and the second electrode; a first semiconductor layer located between the first electrode and the photoabsorber layer; and a second semiconductor layer located between the second electrode and the photoabsorber layer. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The first semiconductor layer contains Li. The second semiconductor layer contains LiN(SO2CF3)2. The second semiconductor layer contains poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. In the second semiconductor layer, a molar ratio of LiN(SO2CF3)2 to poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is not less than 0.15 and not more than 0.26.
摘要:
An SOI substrate includes a base substrate, a polycrystalline silicon layer formed on the base substrate, an insulating layer formed on the polycrystalline silicon layer, and a semiconductor layer formed on the insulating layer, and optical waveguides are formed in the semiconductor layer of the SOI substrate. Thus, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin. Since the polycrystalline silicon layer includes a plurality of grains (a mass of grains made of a single crystal Si), even when leakage of light is generated beyond the insulating layer, reflection (diffusion) of light can be suppressed. In addition, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin, so that distortion of a substrate can be suppressed.
摘要:
A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.
摘要:
An apparatus including first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material include graphene, and wherein the apparatus is configured such that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material.
摘要:
A semiconductor device includes a substrate having an electrode structure. An absorber structure is suspended over the electrode structure and spaced a first distance apart from the first electrode structure. The absorber structure includes i) suspension structures extending upwardly from the substrate and being electrically connected to readout conductors, and ii) a pillar structure extending downwardly from the absorber structure toward the first electrode structure. The pillar structure has a contact portion located a second distance apart from the first electrode structure, the second distance being less than the first distance. The absorber structure is configured to flex toward the substrate under a test condition. The second distance is selected such that the contact portion of the pillar structure is positioned in contact with the first electrode structure when the absorber structure is flexed in response to the test condition.
摘要:
A method of manufacturing a photoelectric conversion element, which is provided with a substrate, a first electrode film having first and second conductive films provided on the substrate, a metal compound film covering the first electrode film, a semiconductor film connected with the metal compound film, a second electrode film connected with the semiconductor film, and an insulating film covering and surrounding the substrate, the first electrode film, the semiconductor film, and the metal compound film, the method including: forming the first conductive film to be connected with the substrate and the second conductive film to be connected with the first electrode film; forming the second conductive film in a predetermined shape using wet etching after the forming of the first and second conductive films, and forming the metal compound film which covers the first electrode film after the forming of the metal compound film.