公开(公告)号：US12132133B2

公开(公告)日：2024-10-29

申请号：US18338631

申请日：2023-06-21

申请人： Samsung Electronics Co., Ltd.

发明人： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC分类号： H01L29/66 ,  G01S7/481 ,  G01S17/931 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/107 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/00 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312

CPC分类号： H01L31/1075 ,  G01S7/4816 ,  G01S7/4817 ,  G01S17/931 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1013 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/024 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0324 ,  H01L2031/0344 ,  H01L31/035218

摘要： A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US12119419B2

公开(公告)日：2024-10-15

申请号：US17422037

申请日：2020-01-15

申请人： Nippon Telegraph and Telephone Corporation

发明人： Kotaro Takeda

IPC分类号： H01L31/024 ,  H01L27/146 ,  H01L31/028

CPC分类号： H01L31/024 ,  H01L27/14643 ,  H01L31/028

摘要： A photodetector having a sufficient ESD withstand voltage is provided. An embodiment of a photodetector includes a plurality of photodiodes including germanium or a germanium compound in a light absorption layer, and a plurality of heaters configured to apply heat to the light absorption layer of each of the plurality of photodiodes, in which the plurality of heaters are connected in series, the plurality of heaters are connected in parallel, or a plurality of sets of the plurality of heaters serially connected are connected in parallel.

公开(公告)号：US12065601B2

公开(公告)日：2024-08-20

申请号：US17431356

申请日：2020-02-18

申请人： TECHNISCHE UNIVERSITEIT EINDHOVEN

发明人： Silvana Botti ,  Friedhelm Bechstedt ,  Jozef Everardus Maria Haverkort ,  Erik Petrus Antonius Maria Bakkers ,  Elham Fadaly ,  Alain Dijkstra

IPC分类号： C09K11/66 ,  B82Y20/00 ,  C01B33/06 ,  H01L31/028 ,  H01L31/036 ,  H01L33/18 ,  H01L33/34 ,  H01S5/34

CPC分类号： C09K11/666 ,  C01B33/06 ,  B82Y20/00 ,  C01P2002/76 ,  C01P2004/03 ,  H01L31/028 ,  H01L31/036 ,  H01L33/18 ,  H01L33/34 ,  H01S5/3427

摘要： The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si1−xGex compound material, said Hex-Si1−xGex compound material having a direct band gap for emitting light.
The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S1−xGex compound material, said Hex-Si1−xGex compound material having a direct band gap for absorbing light.

公开(公告)号：US20240258449A1

公开(公告)日：2024-08-01

申请号：US18560876

申请日：2022-05-17

申请人： MEYER BURGER (GERMANY) GMBH

发明人： Hermann-Josef NONNENMACHER

IPC分类号： H01L31/05 ,  H01L31/028 ,  H01L31/043 ,  H01L31/0747

CPC分类号： H01L31/05 ,  H01L31/028 ,  H01L31/043 ,  H01L31/0747

摘要： The invention relates to a multi-junction solar cell comprising at least two sub-cells based on silicon and at least one material other than silicon, wherein a first sub-cell is designed to use photons in a spectral region of a shorter wavelength than a spectral region of a longer wavelength of a second sub-cell, the second sub-cell being based on silicon and the first sub-cell being based on a material which has a larger band gap than silicon, wherein the first sub-cell and the second sub-cell are designed as a monolithic unit consisting of a layer stack, and wherein the first sub-cell and the second sub-cell are electrically connected to one another in series by means of a tunnel diode, such that the tandem solar cell is equipped with two terminals, wherein the tunnel diode has a tunnel diode n layer and a tunnel diode p layer. The problem addressed is that of proposing a multi-junction solar cell of simple construction. The problem is solved by multi-junction solar cells in which the tunnel diode n layer and/or the tunnel diode p layer is/are silicon-based layer(s).

公开(公告)号：US20240234613A1

公开(公告)日：2024-07-11

申请号：US18617788

申请日：2024-03-27

申请人： Zhejiang Jinko Solar Co., Ltd. ,  Jinko Solar Co., Ltd.

发明人： Jingsheng Jin ,  Guangming Liao

IPC分类号： H01L31/077 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/048 ,  H01L31/05

CPC分类号： H01L31/077 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/048 ,  H01L31/0512

摘要： A solar cell and a photovoltaic module. The solar cell includes: a substrate including a front surface and a back surface, a tunneling layer formed on the back surface of the substrate, a doped conductive layer formed on the tunneling layer, an intrinsic polycrystalline silicon layer formed on the doped conductive layer, a first passivation layer formed on the intrinsic polycrystalline silicon layer, and a first electrode formed on the first passivation layer. The first electrode is in contact with the intrinsic polycrystalline silicon layer by running through the first passivation layer and is spaced apart from the tunneling layer. The photovoltaic module includes the solar cell.

公开(公告)号：US20240230996A1

公开(公告)日：2024-07-11

申请号：US18322921

申请日：2023-05-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tai-Chun HUANG ,  Stefan RUSU

IPC分类号： G02B6/124 ,  G02B6/12 ,  G02B6/13 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

CPC分类号： G02B6/124 ,  G02B6/12004 ,  G02B6/13 ,  H01L27/1443 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1808 ,  G02B2006/12107

摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a waveguide structure, a photoelectric material, and a transistor. The waveguide structure is disposed on a substrate and includes a first doping region having a first type of dopant and a second doping region having a second type of dopant different from the first type. The photoelectric material is disposed proximal to a junction of the first doping region and the second doping region. The transistor is disposed on the substrate at a level same as a level of the waveguide structure. A method of manufacturing the semiconductor structure is also provided.

公开(公告)号：US20240222534A1

公开(公告)日：2024-07-04

申请号：US18608788

申请日：2024-03-18

申请人： Maxeon Solar Pte. Ltd.

发明人： GABRIEL HARLEY ,  TAESEOK KIM ,  RICHARD HAMILTON SEWELL ,  MICHAEL MORSE ,  DAVID D. SMITH ,  MATTHIEU MOORS ,  JENS-DIRK MOSCHNER

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0745

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/50

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20240194799A1

公开(公告)日：2024-06-13

申请号：US18124177

申请日：2023-03-21

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Jingsheng JIN ,  Linan ZHANG

IPC分类号： H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/048 ,  H01L31/05 ,  H01L31/077

CPC分类号： H01L31/02008 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/048 ,  H01L31/0512 ,  H01L31/077

摘要： A solar cell and a photovoltaic module. The solar cell includes substrate, tunnel oxide layer, doped conductive layer, intrinsic polycrystalline silicon layer, enhanced conductive portion, and first electrodes. The tunnel oxide layer covers the first surface of the substrate. The doped conductive layer covers one side of the tunnel oxide layer away from the substrate. The intrinsic polycrystalline silicon layer is formed on one side of the doped conductive layer away from the tunnel oxide layer. The enhanced conductive portion covers one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer, and is at least partially connected to the doped conductive layer. First electrodes are formed on one side of the enhanced conductive portion away from the intrinsic polycrystalline silicon layer, and at least part of each first electrode is located in the enhanced conductive portion to be electrically connected to the doped conductive layer.

公开(公告)号：US11996489B2

公开(公告)日：2024-05-28

申请号：US17615976

申请日：2019-06-06

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tai Tsuchizawa ,  Takuma Aihara ,  Tatsuro Hiraki

IPC分类号： H01L31/0232 ,  G02B6/122 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18 ,  G02B6/12

CPC分类号： H01L31/02327 ,  G02B6/1228 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  G02B2006/12061 ,  G02B2006/12123

摘要： A silicon nitride core is formed on a silicon core via a first silicon oxide layer, and a germanium pattern caused to selectively grow in an opening penetrating through a second silicon oxide layer formed on the silicon nitride core and the first silicon oxide layer is formed on a lower silicon pattern formed to be continuous with the silicon core, thereby constituting a Ge photodiode.

公开(公告)号：US20240153984A1

公开(公告)日：2024-05-09

申请号：US18413311

申请日：2024-01-16

申请人： SiOnyx, LLC

发明人： Homayoon Haddad ,  Jutao Jiang

IPC分类号： H01L27/146 ,  B23K26/352 ,  B82Y40/00 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L27/14643 ,  B23K26/355 ,  B82Y40/00 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/182

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.