公开(公告)号：US20240363775A1

公开(公告)日：2024-10-31

申请号：US18646270

申请日：2024-04-25

申请人： Apple Inc.

发明人： Matthew T. Morea ,  Daniel Mahgerefteh

IPC分类号： H01L31/0352 ,  H01L31/0304 ,  H01L31/105

CPC分类号： H01L31/0352 ,  H01L31/03046 ,  H01L31/105

摘要： A photodetector may include a substrate having a larger lattice constant than an absorber layer. A reverse graded set of buffer layers may provide lattice matching between the substrate and the absorber layer. The substrate may comprise indium arsenide (InAs). The absorber layer may comprise one of indium gallium arsenide (InxGa1-xAs), indium arsenide phosphide (InAsxP1-x), and indium aluminum arsenide (InxAl1-xAs).

公开(公告)号：US12068421B2

公开(公告)日：2024-08-20

申请号：US17619070

申请日：2020-06-15

申请人： NTT Electronics Corporation ,  Nippon Telegraph and Telephone Corporation

发明人： Keiichi Morita ,  Atsushi Murasawa ,  Hiroki Kawashiri ,  Yusuke Nasu

IPC分类号： H01L31/0224 ,  H01L31/0232 ,  H01L31/105

CPC分类号： H01L31/022408 ,  H01L31/02327 ,  H01L31/105

摘要： A light shielding structure of an optical circuit of the present invention uses a part of the structure of the light reception element itself to suppress stray light. A stepped electrode that covers an upper surface and side surface of a first semiconductor layer constituting a light absorption portion of the light reception element is formed at a height substantially equal to that of an optical waveguide in the optical circuit, and the light absorption portion of the light reception element is shielded from stray light by a wall-shaped or column-shaped wiring electrode extending substantially perpendicularly to a surface layer of the optical circuit. The light shielding structure of the present invention uses a part of the configuration of the light reception element, is formed integrally with the light reception element, and also has an aspect of the invention of the light reception element.

公开(公告)号：US20240230996A1

公开(公告)日：2024-07-11

申请号：US18322921

申请日：2023-05-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tai-Chun HUANG ,  Stefan RUSU

IPC分类号： G02B6/124 ,  G02B6/12 ,  G02B6/13 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

CPC分类号： G02B6/124 ,  G02B6/12004 ,  G02B6/13 ,  H01L27/1443 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1808 ,  G02B2006/12107

摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a waveguide structure, a photoelectric material, and a transistor. The waveguide structure is disposed on a substrate and includes a first doping region having a first type of dopant and a second doping region having a second type of dopant different from the first type. The photoelectric material is disposed proximal to a junction of the first doping region and the second doping region. The transistor is disposed on the substrate at a level same as a level of the waveguide structure. A method of manufacturing the semiconductor structure is also provided.

公开(公告)号：US12027642B1

公开(公告)日：2024-07-02

申请号：US18312456

申请日：2023-05-04

申请人： Palomino Laboratories, Inc.

发明人： Steven P. Denbaars ,  Dalton Eng-Denbaars

IPC分类号： H01L31/105 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18

CPC分类号： H01L31/105 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/03529 ,  H01L31/0392 ,  H01L31/1848 ,  H01L31/1852

摘要： According to the present invention, techniques related generally to a photodiode device configured to be receptive to a near ultraviolet (UV-C) emission wavelength range. This wavelength range is specifically designed to be immune to background radiation produced by the Sun, rendering the communication device Solar Blind, and immune to other similar forms of interference. In particular, the present invention provides a light receiving and sensing system using various compositional Al, Ga, Sc, and N solid state materials to detect and measure radiation with a high degree of fidelity. This invention has numerous applications not only in detection and sensing technologies, but also measurement, communication, navigation, and other related aspects.

公开(公告)号：US20240063317A1

公开(公告)日：2024-02-22

申请号：US18385213

申请日：2023-10-30

申请人： W&W Sens Devices, Inc.

发明人： Shih-Yuan WANG ,  Shih-Ping WANG

IPC分类号： H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0745

CPC分类号： H01L31/035272 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/0284 ,  H01L31/035227 ,  H01L31/022475 ,  H01L31/035209 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1075 ,  H01L31/028 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/02016 ,  G02B2006/12176

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20230411542A1

公开(公告)日：2023-12-21

申请号：US17954002

申请日：2022-09-27

申请人： Lumentum Japan, Inc.

发明人： Takashi TOYONAKA ,  Suguru KATO ,  Hiroshi HAMADA

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/105

CPC分类号： H01L31/022408 ,  H01L31/02161 ,  H01L31/105 ,  H01L31/035281 ,  H01L31/02327

摘要： A semiconductor photodetector includes: a substrate; a light-receiving mesa structure, on a first surface of the substrate, including semiconductor layers that includes an absorption layer; an insulating film overlapping with the light-receiving mesa structure in a transverse direction, the insulating film surrounding a side surface of the light-receiving mesa structure; a first electrode, on the first surface, including a mesa electrode electrically connected to and in contact with a top surface of a top layer of the semiconductor layers, the first electrode including a protruding electrode on the insulating film, the protruding electrode being electrically continuous to the mesa electrode, extending outward, and overlapping with the light-receiving mesa structure in the transverse direction, the protruding electrode being smaller in width than the mesa electrode; and a second electrode, on the first surface, electrically connected to a bottom surface of a bottom layer of the semiconductor layers.

公开(公告)号：US20230395618A1

公开(公告)日：2023-12-07

申请号：US18236667

申请日：2023-08-22

申请人： Artilux, Inc.

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/105

CPC分类号： H01L27/14605 ,  H01L27/14645 ,  H01L31/0312 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689 ,  H01L27/14687 ,  H01L27/14685 ,  H01L27/14698 ,  H01L31/09 ,  H01L31/1892 ,  H01L27/14634 ,  H01L27/14632 ,  H01L27/1465 ,  H01L31/1812 ,  H01L27/1469 ,  H01L31/02327 ,  H01L31/1876 ,  H01L31/105 ,  H01L27/14649

摘要： A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.

公开(公告)号：US11830954B2

公开(公告)日：2023-11-28

申请号：US17974325

申请日：2022-10-26

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L31/0236 ,  H01L27/144 ,  G02B1/00 ,  G02B6/42 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  H04B10/25 ,  H04B10/40 ,  H04B10/69 ,  H04B10/80

CPC分类号： H01L31/02363 ,  G02B1/002 ,  G02B6/4204 ,  G02B6/428 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/028 ,  H01L31/02016 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  G02B1/005 ,  Y02E10/547 ,  Y02P70/50

摘要： Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

公开(公告)号：US20230369520A1

公开(公告)日：2023-11-16

申请号：US18356252

申请日：2023-07-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： CHAN-HONG CHERN ,  WEIWEI SONG ,  CHIH-CHANG LIN ,  LAN-CHOU CHO ,  MIN-HSIANG HSU

IPC分类号： H01L31/0352 ,  H01L31/18 ,  G01J1/42 ,  H01L31/105

CPC分类号： H01L31/035254 ,  H01L31/1804 ,  G01J1/42 ,  H01L31/105 ,  H01L31/035281

摘要： The present disclosure provides a photo sensing device and a method for forming a photo sensing device. The photo sensing device includes a substrate, a photosensitive member, a superlattice layer and a diffusion barrier structure. The substrate includes a silicon layer at a front surface. The photosensitive member extends into and at least partially surrounded by the silicon layer, wherein an upper portion of the photosensitive member protruding from the silicon layer has a top surface and a facet tapering toward the top surface. The superlattice layer is disposed between the photosensitive member and the silicon layer. The diffusion barrier structure is disposed at a first side of the photosensitive member and a bottom of the diffusion barrier structure is at a level below a top surface of the silicon layer, wherein at least a portion of the diffusion barrier structure is laterally surrounded by the silicon layer.

公开(公告)号：US11810871B2

公开(公告)日：2023-11-07

申请号：US17125644

申请日：2020-12-17

申请人： Palo Alto Research Center Incorporated

发明人： Christopher L. Chua ,  Norine Chang ,  Gregory Whiting

IPC分类号： H01L23/00 ,  H01L23/525 ,  H01L31/02 ,  H01L31/105 ,  H03K17/94 ,  H05K1/02

CPC分类号： H01L23/573 ,  H01L23/5256 ,  H01L23/57 ,  H01L31/02019 ,  H01L31/105 ,  H03K17/94 ,  H05K1/0275

摘要： A self-destructing device includes a frangible substrate having at least one pre-weakened area. A heater is thermally coupled to the frangible substrate proximate to or at the pre-weakened area. When activated, the heater generates heat sufficient to initiate self-destruction of the frangible substrate by fractures that propagate from the pre-weakened area and cause the frangible substrate to break into many pieces.