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    SILICON CARBIDE OPTO-THYRISTOR AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明公开
    SILICON CARBIDE OPTO-THYRISTOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240145613A1

    公开(公告)日：2024-05-02

    申请号：US18483624

    申请日：2023-10-10

    申请人： Taiwan-Asia Semiconductor Corporation

    发明人： Di-Bao WANG ,  Wen-Chung LEE

    IPC分类号： H01L31/111 ,  H01L21/02 ,  H01L21/04 ,  H01L29/16 ,  H01L29/87

    CPC分类号： H01L31/1113 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/045 ,  H01L29/1608 ,  H01L29/87

    摘要： The present disclosure provides a silicon carbide (SiC) opto-thyristor and a method for manufacturing the same. The SiC opto-thyristor includes a SiC substrate, a SiC light emitter and a SiC light-sensitive thyristor. In the method, a SiC epitaxy is mainly formed on the SiC substrate with the doped P-type and N-type semiconductor materials to define the regions for forming the SiC light emitter and the basic structures of the SiC light-sensitive thyristor. A passivation layer is deposited. Conducting channels for the SiC light emitter and the SiC light-sensitive thyristor are formed by an etching process. After patterning a metal conductor layer, a structure of electrical contacts of the SiC light emitter and the SiC light-sensitive thyristor is formed. Then, terminals of an input voltage and an output voltage of the silicon carbide opto-thyristor are formed after a wire bonding process upon the electrical contacts. Finally, a packaging process is performed.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10204849B2

    公开(公告)日：2019-02-12

    申请号：US15850009

    申请日：2017-12-21

    申请人： Renesas Electronics Corporation

    发明人： Hiroyuki Nakamura ,  Hiroya Shimoyama

    IPC分类号： H01L23/34 ,  H01L23/495 ,  H01L23/04 ,  H01L31/111 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L27/06 ,  H01L29/66 ,  H02M7/00 ,  H02M7/537 ,  H02P27/06 ,  B62D5/04

    摘要： The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.

    Semiconductor device, RC-IGBT, and method of manufacturing semiconductor device
    6.
    发明授权
    Semiconductor device, RC-IGBT, and method of manufacturing semiconductor device 有权

    公开(公告)号：US10186609B2

    公开(公告)日：2019-01-22

    申请号：US15706403

    申请日：2017-09-15

    申请人： Renesas Electronics Corporation

    发明人： Kazuhiro Yamada

    IPC分类号： H01L29/74 ,  H01L31/111 ,  H01L29/739 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/40 ,  H01L29/861 ,  H01L29/423

    摘要： According to one embodiment, a semiconductor device 100 includes a semiconductor substrate 1 including a first principal surface and a second principal surface, an emitter electrode 46, a gate wiring 49, a collector electrode 43, a first unit cell region 10 that is extended along one direction in a plane parallel to the first principal surface, and a second unit cell region 20 that is extended along one direction, in which the semiconductor substrate 1 of the first unit cell region 10 and the second unit cell region 20 includes an N− type drift layer 39, an N type hole barrier layer 38, a trench electrode 13, a P type body layer 36, an insulating film 35, an N type field stop layer 41, and a P+ type collector layer 42, and the second unit cell region 20 includes an N type cathode layer 47 that is fitted into the collector layer 42 and is extended along one direction.