公开(公告)号：US20230343887A1

公开(公告)日：2023-10-26

申请号：US18216496

申请日：2023-06-29

申请人： THE TRUSTEES OF DARTMOUTH COLLEGE

发明人： Zhiyuan WANG ,  Xiaoxin WANG ,  Jifeng LIU

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/119 ,  H01L31/0232 ,  H01L27/144

CPC分类号： H01L31/119 ,  H01L27/1446 ,  H01L27/146 ,  H01L27/14875 ,  H01L31/02327

摘要： Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US11749754B2

公开(公告)日：2023-09-05

申请号：US17550712

申请日：2021-12-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangmoon Lee ,  Kyungin Choi ,  Seunghun Lee

IPC分类号： H01L31/113 ,  H01L31/119 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417

CPC分类号： H01L29/785 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/6681

摘要： An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

公开(公告)号：US11735635B2

公开(公告)日：2023-08-22

申请号：US17305971

申请日：2021-07-19

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Chun-Han Tsao ,  Chih-Ming Chen ,  Han-Yu Chen ,  Szu-Yu Wang ,  Lan-Lin Chao ,  Cheng-Yuan Tsai

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/119 ,  H01L29/423 ,  H01L29/66 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L49/02 ,  H01L21/02 ,  H10B43/30 ,  H10B43/40

CPC分类号： H01L29/42344 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/76834 ,  H01L21/76856 ,  H01L28/00 ,  H01L29/665 ,  H10B43/30 ,  H10B43/40

摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.

公开(公告)号：US11233151B2

公开(公告)日：2022-01-25

申请号：US16887900

申请日：2020-05-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangmoon Lee ,  Kyungin Choi ,  Seunghun Lee

IPC分类号： H01L31/113 ,  H01L31/119 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417

摘要： An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

公开(公告)号：US11145709B2

公开(公告)日：2021-10-12

申请号：US16439636

申请日：2019-06-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hong-Yang Chen ,  Tian Sheng Lin ,  Yi-Cheng Chiu ,  Hung-Chou Lin ,  Yi-Min Chen ,  Kuo-Ming Wu ,  Chiu-Hua Chung

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L31/119 ,  H01L49/02 ,  H01L27/01 ,  H01L27/06

摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

公开(公告)号：US10833177B2

公开(公告)日：2020-11-10

申请号：US16529290

申请日：2019-08-01

申请人： Semiconductor Manufacturing International (Beijing) Corporation ,  Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Fei Zhou

IPC分类号： H01L21/336 ,  H01L21/311 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417

摘要： Semiconductor device and fabrication method are provided. The method includes: providing a substrate having a fin which has first fin layers and second fin layers; forming a dummy gate structure across the fin; after forming the dummy gate structure, respectively forming a first groove and a second groove in the fin on two sides of the dummy gate structure; removing a portion of the second fin layer adjacent to the first groove to form a first fin recess; removing a portion of the second fin layer adjacent to the second groove to form a second fin recess; forming a first spacer layer in the first fin recess and forming a second spacer layer in the second fin recess; after forming the first spacer layer, forming a doped drain layer in the first groove; and after forming the second spacer layer, forming a doped source layer in the second groove.

公开(公告)号：US20200044111A1

公开(公告)日：2020-02-06

申请号：US16606829

申请日：2018-04-20

申请人： THE TRUSTEES OF DARTMOUTH COLLEGE

发明人： Zhiyuan WANG ,  Xiaoxin WANG ,  Jifeng LIU

IPC分类号： H01L31/119 ,  H01L31/0232 ,  H01L27/148

摘要： Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US10483348B2

公开(公告)日：2019-11-19

申请号：US15982775

申请日：2018-05-17

申请人： SOCIONEXT, INC.

发明人： Hidetoshi Tanaka

IPC分类号： H01L31/113 ,  H01L31/119 ,  H01L29/06 ,  H01L27/02 ,  H01L29/786 ,  H01L29/78

摘要： A semiconductor device has transistors formed on a substrate and including first and second impurity regions of a first conductivity type, a guard ring of a second conductivity type formed on the substrate and surrounding the transistors in a plan view, a wiring formed on and electrically connected to the guard ring, and a ground wiring faulted on the wiring and electrically connected to the wiring and the second impurity region. In a plan view, the transistor includes a first part having a distance that is a first distance from the guard ring, and a second part having a distance that is a second distance shorter than the first distance from the guard ring. In a plan view, the first part is located at a position separated from the ground wiring, and the second part is located at a position overlapping the ground wiring.

公开(公告)号：US10396203B2

公开(公告)日：2019-08-27

申请号：US15993535

申请日：2018-05-30

申请人： Intel Corporation

发明人： Glenn A. Glass ,  Anand S. Murthy ,  Daniel B. Aubertine ,  Subhash M. Joshi

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/78 ,  H01L29/66 ,  H01L21/304 ,  H01L21/306 ,  H01L27/105 ,  H01L29/04 ,  H01L29/10 ,  H01L27/088

摘要： Transistor fin elements (e.g., fin or tri gate) may be modified by radio frequency (RF) plasma and/or thermal processing for purpose of dimensional sculpting. The etched, thinned fins may be formed by first forming wider single crystal fins, and after depositing trench oxide material between the wider fins, etching the wider fins using a second etch to form narrower single crystal fins having undamaged top and sidewalls for epitaxially growing active channel material. The second etch may remove a thickness of between a 1 nm and 15 nm of the top surfaces and the sidewalls of the wider fins. It may remove the thickness using (1) chlorine or fluorine based chemistry using low ion energy plasma processing, or (2) low temperature thermal processing that does not damage fins via energetic ion bombardment, oxidation or by leaving behind etch residue that could disrupt the epitaxial growth quality of the second material.

公开(公告)号：US10347784B2

公开(公告)日：2019-07-09

申请号：US15963744

申请日：2018-04-26

申请人： International Business Machines Corporation

发明人： Kangguo Cheng ,  Xin Miao ,  Wenyu Xu ,  Chen Zhang

IPC分类号： H01L31/00 ,  H01L31/119 ,  H01L31/113 ,  H01L29/06 ,  H01L27/144 ,  H01L29/08 ,  H01L31/0352 ,  H01L31/18 ,  H01L21/8234 ,  H01L29/78

摘要： A semiconductor device includes a semiconductor structure formed on a substrate, a gate dielectric formed on a first side of the semiconductor structure, and a dielectric layer formed on a second side of the semiconductor structure.