公开(公告)号：US07342252B2

公开(公告)日：2008-03-11

申请号：US11602333

申请日：2006-11-21

申请人： Hyeon-Ho Son

发明人： Hyeon-Ho Son

IPC分类号： H01L31/376 ,  H01L21/00

CPC分类号： H01L27/124 ,  G02F1/134363

摘要： A thin film transistor array substrate structure includes a plurality of data lines; a plurality of gate lines intersecting the data lines to define pixel areas, the gate line being adjacent to at least two pixel areas; a plurality of common lines disposed between the at least two pixel areas; a plurality of thin film transistors formed at each intersection between the gate lines and the data lines; a plurality of common electrodes provided substantially parallel to the common lines; and a plurality of pixel electrodes connected to the thin film transistors.

摘要翻译： 薄膜晶体管阵列基板结构包括多条数据线; 与所述数据线相交以限定像素区域的多个栅极线，所述栅极线与至少两个像素区域相邻; 布置在所述至少两个像素区域之间的多个公共线; 形成在栅极线和数据线之间的每个交叉处的多个薄膜晶体管; 多个公共电极基本上平行于公共线设置; 以及连接到薄膜晶体管的多个像素电极。

公开(公告)号：US06963084B2

公开(公告)日：2005-11-08

申请号：US10759683

申请日：2004-01-16

申请人： Tatsuya Arao ,  Atsuo Isobe ,  Toru Takayama

发明人： Tatsuya Arao ,  Atsuo Isobe ,  Toru Takayama

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L27/32 ,  H01L29/786 ,  H01L29/04 ,  H01L31/36 ,  H01L31/376

CPC分类号： G02F1/133305 ,  G02F1/1362 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/66742 ,  H01L29/78603

摘要： In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.

摘要翻译： 在具有金属表面的基板的半导体器件中，形成在具有金属表面的基板上的绝缘膜和形成在绝缘膜上的像素单元; 像素单元包括TFT和与TFT连接的布线，并且存储电容器由具有金属表面的基板（11），绝缘膜（12）和布线（21）构成。 由于绝缘膜更薄，并且随着绝缘膜和布线接触的区域的面积较大，所以存储电容器具有较大的容量。

公开(公告)号：US5563425A

公开(公告)日：1996-10-08

申请号：US149749

申请日：1993-11-10

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L29/04 ,  H01L31/36 ,  H01L31/376

CPC分类号： H01L31/065 ,  H01L31/056 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

摘要翻译： 本发明的目的是提供一种光电转换装置，其中防止由光激发的载流子的复合，并且改善了空穴的开路电压和载流子范围，并提供了使用光电转换装置的发电系统。 所述光电转换装置包括p层，i层和n层，其中所述光电转换装置通过层叠p层，i层和n层而形成，所述p层，i层和n层由 非单晶硅半导体，i层含有锗原子，i层的带隙在i层的厚度方向上平滑地变化，带隙的最小值位于 i层的中心位置的p层和作为供体的价电子控制剂以及用作受体的另一价电子控制剂都掺杂到i层中。 此外，p层或n层中的至少任一层形成为由主要由周期表的III族元素和/或其V族元素组成的层和包含该价电子层的层 控制剂主要由硅原子组成。

公开(公告)号：US07075109B2

公开(公告)日：2006-07-11

申请号：US10704569

申请日：2003-11-12

申请人： Kenichi Takahara

发明人： Kenichi Takahara

IPC分类号： H01L29/04 ,  H01L31/36 ,  H01L31/376 ,  H01L31/20

CPC分类号： H01L27/12 ,  G02F1/136227 ,  G02F2001/133357

摘要： An electro-optical device for a liquid-crystal apparatus includes TFTs provided above a substrate, pixel electrodes that are provided above the TFTs and that are connected to corresponding relay electrodes via contact holes, a protection insulating film that is provided on the pixel electrodes from the gaps between the pixel electrodes to the edge portions thereof so as to cover end surfaces of the edge portions of the pixel electrodes, and an alignment layer that is provided on a surface including the protection insulating film and that is rubbed. Material residues of the alignment layer are reduced or prevented from being generated or trapped in the vicinities of the edges of the pixel electrodes and in the vicinities of the contact holes. Consequently, brightness irregularities or display irregularities are reduced.

摘要翻译： 一种用于液晶装置的电光装置，包括设置在基板上的TFT，设置在TFT上方的像素电极，并且经由接触孔与相应的继电器电极连接，保护绝缘膜设置在像素电极上 像素电极与其边缘部分之间的间隙，以覆盖像素电极的边缘部分的端面，以及设置在包括保护绝缘膜并被摩擦的表面上的取向层。 取向层的材料残留物被减少或阻止在像素电极的边缘附近以及接触孔附近产生或捕获。 因此，亮度不均匀或显示不规则减少。

公开(公告)号：US06963083B2

公开(公告)日：2005-11-08

申请号：US10663765

申请日：2003-09-17

申请人： Dae Hyun Nam

发明人： Dae Hyun Nam

IPC分类号： G02F1/136 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04 ,  H01L31/20 ,  H01L31/36 ,  H01L31/376 ,  H01L29/76 ,  H01L31/62 ,  H01L31/113

CPC分类号： H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78696

摘要： A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.

摘要翻译： 薄膜晶体管包括基板，在具有沟道区域的基板上形成的结晶半导体层，低密度杂质区域和高密度杂质区域，形成在结晶化半导体层上的栅极绝缘层，形成在第一栅电极 所述栅绝缘层具有对应于所述沟道区的宽度，第二栅电极，形成在所述第一栅极上和所述栅绝缘层上，使得所述第二栅电极与所述低密度杂质区重叠，以及源电极和漏电极 分别接触高浓度杂质区域。

公开(公告)号：US07157303B2

公开(公告)日：2007-01-02

申请号：US11003370

申请日：2004-12-06

申请人： Hyeon-Ho Son

发明人： Hyeon-Ho Son

IPC分类号： H01L21/00 ,  H01L31/376

CPC分类号： H01L27/124 ,  G02F1/134363

摘要： A thin film transistor array substrate structure includes a plurality of data lines; a plurality of gate lines intersecting the data lines to define pixel areas, the gate line being adjacent to at least two pixel areas; a plurality of common lines disposed between the at least two pixel areas; a plurality of thin film transistors formed at each intersection between the gate lines and the data lines; a plurality of common electrodes provided substantially parallel to the common lines; and a plurality of pixel electrodes connected to the thin film transistors.

摘要翻译： 薄膜晶体管阵列基板结构包括多条数据线; 与所述数据线相交以限定像素区域的多个栅极线，所述栅极线与至少两个像素区域相邻; 布置在所述至少两个像素区域之间的多个公共线; 形成在栅极线和数据线之间的每个交叉处的多个薄膜晶体管; 多个公共电极基本上平行于公共线设置; 以及连接到薄膜晶体管的多个像素电极。

公开(公告)号：US07145175B2

公开(公告)日：2006-12-05

申请号：US10934997

申请日：2004-09-07

申请人： Kiyoshi Kato ,  Tomoaki Atsumi ,  Atsuo Isobe

发明人： Kiyoshi Kato ,  Tomoaki Atsumi ,  Atsuo Isobe

IPC分类号： H01L29/04 ,  H01L31/06 ,  H01L31/376 ,  H01L31/20

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can be provided, and a semiconductor integrated circuit having high conformance can be provided. The invention is characterized in that, in a part or whole of thin film transistors which configure an analog circuit such as a current mirror circuit, a differential amplifier circuit, or an operational amplifier, in which high conformance is required for semiconductor devices included therein, channel forming regions have crystalline semiconductor films on the same line. High conformance can be expected for an analog circuit which has the crystalline semiconductor films on the same line formed using the invention as the channel forming regions of the thin film transistors. That is, the invention is characterized in that, among the thin film transistors which configures the analog circuit, the channel forming regions of the thin film transistors having at least the same polarity are formed on the same line.

公开(公告)号：US07130000B2

公开(公告)日：2006-10-31

申请号：US10653937

申请日：2003-09-04

申请人： Heung-Soo Kim

发明人： Heung-Soo Kim

IPC分类号： G02F1/136 ,  G09G3/36 ,  H01L31/376 ,  H01L29/04

CPC分类号： G02F1/134363 ,  G02F1/1368 ,  G02F2001/136295

摘要： An array substrate of a liquid crystal display device includes a substrate, a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel area, a common line parallel to the gate line, a common electrode extending from the common line and including a plurality of vertical portions, a thin film transistor electrically connected to the gate line and the data line, the thin film transistor including a gate electrode connected to the gate line, a semiconductor layer over the gate electrode, a source electrode over the semiconductor layer and connected to the data line, and a drain electrode over the semiconductor layer and spaced apart from the source electrode, wherein a portion of the semiconductor layer partly covers a side of the gate electrode disposed between the data line and the drain electrode, and a pixel electrode in the pixel area, the pixel electrode connected to the drain electrode, and includes a plurality of vertical parts alternating with the plurality of vertical portions of the common electrode.

摘要翻译： 液晶显示装置的阵列基板包括基板，栅极线和数据线，基板上的栅极线和数据线彼此交叉以限定像素区域，平行于栅极线的公共线， 公共电极从公共线延伸并且包括多个垂直部分，电连接到栅极线和数据线的薄膜晶体管，薄膜晶体管包括连接到栅极线的栅电极，栅极上的半导体层 电极，半导体层上的源电极并连接到数据线，以及位于半导体层上方并与源电极间隔开的漏电极，其中半导体层的一部分部分地覆盖设置在栅电极之间的栅电极的一侧 数据线和漏电极，以及像素区域中的像素电极，连接到漏电极的像素电极，并且包括多个垂直平面 ts与公共电极的多个垂直部分交替。

公开(公告)号：US08134153B2

公开(公告)日：2012-03-13

申请号：US13010962

申请日：2011-01-21

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/04 ,  H01L31/36 ,  H01L31/376 ,  H01L31/20

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

摘要翻译： 本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及 使用塑料基板的液晶显示装置。 根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅 光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。

公开(公告)号：US08013335B2

公开(公告)日：2011-09-06

申请号：US12370767

申请日：2009-02-13

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/04 ,  H01L31/36 ,  H01L31/376 ,  H01L31/20

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

摘要翻译： 本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及 使用塑料基板的液晶显示装置。 根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅 光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。