公开(公告)号：US06825516B2

公开(公告)日：2004-11-30

申请号：US10342313

申请日：2003-01-15

申请人： Howard E. Rhodes

发明人： Howard E. Rhodes

IPC分类号： H01L31062

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/035236 ,  H01L31/113

摘要： A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial layer is optimized so that the collection of signal carriers by the photosensitive region is maximized.

公开(公告)号：US06818934B1

公开(公告)日：2004-11-16

申请号：US10603727

申请日：2003-06-24

申请人： Katsumi Yamamoto

发明人： Katsumi Yamamoto

IPC分类号： H01L31062

CPC分类号： H01L27/14627 ,  H01L31/02327

摘要： An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a trench structure surrounds each of the micro-lenses.

摘要翻译： 公开了一种具有微透镜的图像传感器。 图像传感器包括形成在半导体衬底中的多个像素，每个像素包括光敏元件。 在每个光敏元件上形成微透镜。 最后，围绕每个微透镜的沟槽结构。

公开(公告)号：US06806524B2

公开(公告)日：2004-10-19

申请号：US10622514

申请日：2003-07-21

申请人： Tsukasa Ooishi

发明人： Tsukasa Ooishi

IPC分类号： H01L31062

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15

摘要： A thin film magnetic memory device includes: TMR elements provided at a predetermined distance away from each other on a main surface of a silicon substrate so as to operate as memory elements; a first digit line for applying a magnetic field to TMR element, extending in one direction so as to intersect TMR element; a second digit line for applying a magnetic field to TMR element, extending parallel to the first digit line so as to intersect TMR element; and a magnetic film provided so as to fill in the space between the first digit line and the second digit line and so as to bring into contact with the first and second digit lines. The present invention provides a thin film magnetic memory device wherein crosstalk can be prevented from generating between adjacent memory cells and wherein wire resistance does not increase.

公开(公告)号：US06798001B2

公开(公告)日：2004-09-28

申请号：US09902177

申请日：2001-07-10

申请人： Tomotaka Fujisawa ,  Chihiro Arai

发明人： Tomotaka Fujisawa ,  Chihiro Arai

IPC分类号： H01L31062

CPC分类号： H01L31/11

摘要： A semiconductor device having a photo diode which has substantially the same sensitivity to a plurality of light having different wavelengths, includes a first and a second conductivity type semiconductor layer formed at a surface layer portion of the first conductivity type semiconductor layer, wherein the sensitivity to light of a first wavelength and a second wavelength which is different from the first wavelength, are made substantially the same by designing a region in which a depletion layer spreads from a junction of the first and second conductivity type semiconductor layers and when an inverse bias is applied to the first and second conductivity type semiconductor layers, for example, by designing it to spread in a region of 3 to 6 &mgr;m or a region of 2 to 7 &mgr;m from the surface of the second conductivity type semiconductor layer in the depth direction.

摘要翻译： 具有对具有不同波长的多个光具有基本上相同灵敏度的光电二极管的半导体器件包括形成在第一导电类型半导体层的表层部分的第一和第二导电类型半导体层，其中对 通过设计从第一和第二导电类型半导体层的接合层扩散的耗尽层的区域，并且当反向偏置为 施加到第一和第二导电类型半导体层，例如通过将其设计成在深度方向上从第二导电类型半导体层的表面扩展到3至6μm的区域或2至7μm的区域。

公开(公告)号：US06767312B2

公开(公告)日：2004-07-27

申请号：US10391798

申请日：2003-03-20

申请人： Jin-Seop Shim

发明人： Jin-Seop Shim

IPC分类号： H01L31062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035236 ,  H01L31/1133

摘要： A CMOS image sensor capable of increasing the punch-through voltage and the charge integration of a photodiode, and a method for forming the same. The punch-through voltage of a transfer transistor is increased, and the potential barrier is heightened between the photodiode and the floating diffusion region during the turn-off of the transfer transistor so as to increase the charge accumulation amount of the photodiode, while the photodiode is formed without resorting to a self-aligned ion-implantation. A p-type impurity region is formed under the gate electrode of the transfer transistor and within the semiconductor substrate, and the process can proceed without being limited by the self-alignment. Further, the p-type impurity region heightens the potential barrier between the photodiode and the floating diffusion region, i.e., the potential difference between the two regions is increased and, therefore, the charge accumulation amount is increased in the photodiode.

摘要翻译： 能够增加穿通电压和光电二极管的电荷积分的CMOS图像传感器及其形成方法。 转移晶体管的穿通电压增加，并且在转移晶体管的截止期间在光电二极管和浮动扩散区域之间势垒增强，从而增加光电二极管的电荷累积量，而光电二极管 在不采用自对准离子注入的情况下形成。 在转移晶体管的栅电极之下和半导体衬底内形成p型杂质区，并且该工艺可以在不受自对准的限制的情况下进行。 此外，p型杂质区域增强了光电二极管和浮动扩散区域之间的势垒，即两个区域之间的电位差增大，因此光电二极管中的电荷累积量增加。

公开(公告)号：US06753561B1

公开(公告)日：2004-06-22

申请号：US10330512

申请日：2002-12-26

申请人： Darrell Rinerson ,  Steven W. Longcor ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Christophe J. Chevallier

发明人： Darrell Rinerson ,  Steven W. Longcor ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Christophe J. Chevallier

IPC分类号： H01L31062

CPC分类号： H01L27/2418 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/165

摘要： Cross point memory array using multiple thin films. The invention is a cross point memory array that uses conductive array lines and multiple thin films as a memory plug. The thin films of the memory plug include a memory element and a non-ohmic device. The memory element switches between resistive states upon application of voltage pulses and the non-ohmic device imparts a relatively high resistance to the memory plug upon application of low magnitude voltages.

摘要翻译： 使用多个薄膜的交叉点存储阵列。 本发明是使用导电阵列线和多个薄膜作为存储器插头的交叉点存储器阵列。 存储器插头的薄膜包括存储器元件和非欧姆器件。 存储器元件在施加电压脉冲时在电阻状态之间切换，并且非欧姆器件在施加低幅度电压时对存储器插头施加相当高的电阻。

公开(公告)号：US06724028B2

公开(公告)日：2004-04-20

申请号：US10300802

申请日：2002-11-21

申请人： Hans Gude Gudesen

发明人： Hans Gude Gudesen

IPC分类号： H01L31062

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823828

摘要： In an array of integrated transistor/memory structures the array includes one or more layers of semiconducting material, two or more electrode layers, and memory material contacting electrodes in the latter. At least one layer of a semiconducting material and two electrode layers form transistor structures such that the electrodes of the first electrode layer forms source/drain electrode pairs and those of a second electrode layer form the gate electrodes thereof. The source and drain electrodes of a single transistor/memory structure are separated by a narrow recess extending down to the semiconducting layer wherein the transistor channel is provided beneath the recess and with extremely small width, while the source and drain regions are provided beneath the respective source and drain electrodes on either side of the transistor channel. Memory material is provided in the recess and contacts the electrodes of the transistor.

摘要翻译： 在集成晶体管/存储器结构的阵列中，该阵列包括一层或多层半导体材料，两个或多个电极层，以及后​​者中的记忆材料接触电极。 至少一层半导体材料和两个电极层形成晶体管结构，使得第一电极层的电极形成源/漏电极对，而第二电极层的电极形成其栅电极。 单个晶体管/存储器结构的源电极和漏电极由向下延伸到半导体层的窄凹槽分开，其中晶体管沟道设置在凹槽下方并且具有非常小的宽度，同时源极和漏极区域设置在相应的 晶体管沟道两侧的源极和漏极。 存储器材料设置在凹部中并与晶体管的电极接触。

公开(公告)号：US06713796B1

公开(公告)日：2004-03-30

申请号：US10044974

申请日：2002-01-15

申请人： Eric C. Fox

发明人： Eric C. Fox

IPC分类号： H01L31062

CPC分类号： H01L27/14609 ,  H01L27/14601

摘要： A sensor formed in a substrate of a first conductivity type in a first concentration to express a first intrinsic potential includes CMOS circuitry to control the sensor, a first well of the first conductivity type in a second concentration (greater than the first concentration) formed in the substrate to express a second intrinsic potential, and a photodiode region of a second conductivity type formed in the first well. The first and second intrinsic potentials induce a field between the substrate and the first well that repels photo generated charge from drifting from the substrate into the first well. Alternatively, a sensor formed in a substrate of a first conductivity type includes CMOS circuitry to control the sensor, a first well of a second conductivity type formed in the substrate, a second well of the first conductivity type formed in the first well, and a photodiode region of the second conductivity type formed in the second well.

摘要翻译： 形成在具有第一浓度以表达第一固有电位的第一导电类型的衬底中的传感器包括用于控制传感器的CMOS电路，第一导电类型的第一阱在第二浓度（大于第一浓度） 表示第二固有电位的衬底和形成在第一阱中的第二导电类型的光电二极管区域。 第一和第二固有电位诱导衬底和第一阱之间的场，其排斥光生成的电荷，从衬底漂移到第一阱中。 或者，形成在第一导电类型的衬底中的传感器包括用于控制传感器的CMOS电路，形成在衬底中的第二导电类型的第一阱，形成在第一阱中的第一导电类型的第二阱，以及 第二导电类型的光电二极管区域形成在第二阱中。

公开(公告)号：US06649952B2

公开(公告)日：2003-11-18

申请号：US09750915

申请日：2001-01-02

申请人： Atsumasa Sawada

发明人： Atsumasa Sawada

IPC分类号： H01L31062

CPC分类号： G02B5/201 ,  G02F1/133512 ,  G02F1/133514

摘要： A color filter used in a color display device for displaying a color image by irradiating a color layer of the color filter with light includes a titanium dioxide layer having ultraviolet light shielding function formed in direct contact with the surface of the color layer at the upper side of the color layer in case that only the light incident on the color layer from the upper side of the color layer is prevented or an upper and lower titanium dioxide layers formed on and below the color layer in order to make the advantage being free from fading perfect. In the latter case, it is possible to restrict transmission of light having wavelength in the wavelength range of ultraviolet light to the color layer to thereby restrict direct decomposition of pigment molecules and obtain the advantage being free from fading, by directly covering the color filter with titanium dioxide at the upper side of the color layer and providing the lower titanium dioxide layer below the color layer.

摘要翻译： 用于通过用光照射滤色器的彩色显示装置用于显示彩色图像的滤色器包括具有紫外线屏蔽功能的二氧化钛层，其与上侧的彩色层的表面直接接触 在仅防止从着色层的上侧入射到着色层上的光的情况下，或者在着色层上形成上下二氧化钛层，以使其没有褪色的优点 完善。 在后一种情况下，可以将紫外线的波长范围内的光的透射限制到着色层，从而通过直接覆盖滤色器来限制颜料分子的直接分解并获得没有褪色的优点 在着色层的上侧具有二氧化钛，并在着色层下方提供下部二氧化钛层。

公开(公告)号：US06642562B2

公开(公告)日：2003-11-04

申请号：US10198210

申请日：2002-07-17

申请人： Takashi Watanabe

发明人： Takashi Watanabe

IPC分类号： H01L31062

CPC分类号： H01L21/823892 ,  H01L27/092 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid imaging device including: a semiconductor substrate of a first conductivity type; a layer of a second conductivity type formed on a surface of the semiconductor substrate, the layer at least including a photosensitive portion of the second conductivity type; and a MOS transistor of the second conductivity type coupled to the photosensitive portion, wherein the solid imaging device further includes a layer of the first conductivity type in at least a channel region of the MOS transistor of the second conductivity type, the layer of the first conductivity type having an impurity concentration which is higher than an impurity concentration of the semiconductor substrate, and wherein at least a portion of a boundary of the layer of the second conductivity type is in direct contact with the semiconductor substrate.