公开(公告)号：US20240363599A1

公开(公告)日：2024-10-31

申请号：US18681521

申请日：2022-08-17

申请人： BOE Technology Group Co., Ltd.

发明人： Can WANG ,  Qi QI ,  Wei LI ,  Can ZHANG ,  Minghua XUAN ,  Jinfei NIU ,  Jingjing ZHANG

IPC分类号： H01L25/075 ,  H01L21/683 ,  H01L33/00 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/50 ,  H01L33/52 ,  H01L33/58 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L21/6835 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/50 ,  H01L33/52 ,  H01L33/58 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091

摘要： A method for preparing the display substrate includes: providing a first substrate, and forming a light emitting chip layer on the first substrate to form a first backplane, wherein the light emitting chip layer includes: light emitting chips arranged in array, which are configured to emit light of a first color and include N sub-pixels, and N is a positive integer greater than or equal to 1; providing a second substrate, and forming a drive circuit layer on the second substrate to form a second backplane, wherein the drive circuit layer includes: connection electrodes arranged in an array, and the light emitting chips correspond to the connection electrodes one-by-one; transferring the first backplane from which the first substrate is peeled off to the second backplane; forming an optical film layer on a side of the light emitting chip layer away from the second backplane.

公开(公告)号：US12130508B2

公开(公告)日：2024-10-29

申请号：US18429592

申请日：2024-02-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Gon Kim ,  Garam Park ,  Jooyeon Ahn ,  Shang Hyeun Park ,  Shin Ae Jun

IPC分类号： C09K11/62 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/88 ,  G02F1/017 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115

CPC分类号： G02F1/01716 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/025 ,  C09K11/0811 ,  C09K11/0883 ,  C09K11/62 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115 ,  G02F1/01791

摘要： A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

公开(公告)号：US20240355964A1

公开(公告)日：2024-10-24

申请号：US18624467

申请日：2024-04-02

申请人： XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.

发明人： Jenlung YANG ,  Ping ZHANG ,  Yawen LIN ,  Shiwang HUANG ,  Chung-Ying CHANG

IPC分类号： H01L33/14 ,  H01L33/06 ,  H01L33/32 ,  H01L33/62

CPC分类号： H01L33/145 ,  H01L33/06 ,  H01L33/32 ,  H01L33/62

摘要： A light-emitting diode includes a current-blocking layer disposed on a second semiconductor layer of a semiconductor stacking layer and including a strip-shaped part, a transparent conducting layer disposed on the second semiconductor layer and covering the current-blocking layer, a first electrode disposed on a first semiconductor layer of the semiconductor stacking layer, and a second electrode disposed on the transparent conducting layer and including a second electrode pad and a second electrode extension part. As viewed from a top of the light-emitting diode towards the semiconductor stacking layer, a first side of the strip-shaped part defines a first distance from a side of the second electrode extension part facing towards the first side, and a second side of the strip-shaped part defines a second distance from a side of the second electrode extension part facing towards the second side, and the first distance is greater than the second distance.

公开(公告)号：US20240355958A1

公开(公告)日：2024-10-24

申请号：US18410675

申请日：2024-01-11

申请人： ANHUI SANAN OPTOELECTRONICS CO., LTD.

发明人： Yu WANG ,  Yung-ling LAN ,  Mingbin MA ,  Chao TANG ,  Hongmin ZHOU ,  Jinkuang DONG ,  Cheng-hung LEE ,  Chan-chan LING

IPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L33/42

摘要： This disclosure provides a light-emitting device comprising a semiconductor laminate. The semiconductor laminate includes an n-type semiconductor layer, a p-type semiconductor layer disposed on the n-type semiconductor layer, and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a first surface proximate to the n-type semiconductor layer and a second surface proximate to the p-type semiconductor layer. The p-type semiconductor layer has a third surface proximate to and a fourth surface distal to the n-type semiconductor layer. The semiconductor laminate further includes hydrogen impurities with a concentration distribution along a thickness direction from the n-type to the p-type semiconductor layers. The concentration distribution has a first peak value at a first location proximate to a second peak value at a second location distal to the active layer. The second peak value is greater than the first peak value.

公开(公告)号：US20240346354A1

公开(公告)日：2024-10-17

申请号：US18299827

申请日：2023-04-13

申请人： QUANTUM SOURCE LABS LTD. ,  YEDA RESEARCH AND DEVELOPMENT CO. LTD.

发明人： Gil SEMO ,  Ziv AQUA ,  Oded MELAMED ,  Dan CHARASH ,  Serge ROSENBLUM ,  Barak DAYAN

IPC分类号： G06N10/40 ,  G06N10/20 ,  H01L29/66 ,  H01L33/06

CPC分类号： G06N10/40 ,  G06N10/20 ,  H01L29/66977 ,  H01L33/06

摘要： Systems and methods for a quantum computing include a plurality of photonic processing stages, a plurality of heralding-free connections, and circuitry configured to regulate photon flow between adjacent stages such that decisions about stage settings or flow between adjacent stages are free of input from a previous stage. Each heralding-free connection is located between adjacent photonic processing stages. Each photonic processing stage includes at least two of an optical switch, a beam splitter, a waveguide or a photon generator. Methods include transmitting or receiving a plurality of photons via a plurality of heralding-free connections, and regulating photon flow between adjacent stages such that decisions about stage settings or flow between adjacent stages are free of input from a previous stage.

公开(公告)号：US20240332462A1

公开(公告)日：2024-10-03

申请号：US18735999

申请日：2024-06-06

申请人： NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Marino KISHI ,  Chie MIYAMAE ,  Susumu KUWABATA ,  Taro UEMATSU ,  Daisuke OYAMATSU ,  Kenta NIKI

IPC分类号： H01L33/50 ,  C09K11/62 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/502 ,  C09K11/62 ,  H01L33/005 ,  H01L33/06 ,  H01L33/507

摘要： Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

公开(公告)号：US20240332423A1

公开(公告)日：2024-10-03

申请号：US18739078

申请日：2024-06-10

申请人： Epinovatech AB

发明人： Martin Andreas Olsson

IPC分类号： H01L29/78 ,  G01N27/414 ,  G06N10/00 ,  H01L21/02 ,  H01L27/092 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H10N60/10 ,  H10N60/83 ,  H10N60/85

CPC分类号： H01L29/7851 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/0924 ,  H01L29/0676 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/20 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H10N60/128 ,  H10N60/83 ,  H10N60/85 ,  G01N27/4146 ,  G06N10/00 ,  H01L29/41791

摘要： A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.

公开(公告)号：US12107197B2

公开(公告)日：2024-10-01

申请号：US17523828

申请日：2021-11-10

申请人： OSRAM Opto Semiconductors GmbH

发明人： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

IPC分类号： H01L33/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/00 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/00 ,  H01L33/06 ,  H01L33/56

CPC分类号： H01L33/502 ,  B82Y30/00 ,  C01B19/007 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/005 ,  H01L33/06 ,  H01L33/56 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0083 ,  Y10S977/744 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/89 ,  Y10S977/95

摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

公开(公告)号：US12100781B2

公开(公告)日：2024-09-24

申请号：US17562246

申请日：2021-12-27

申请人： JADE BIRD DISPLAY (SHANGHAI) LIMITED

发明人： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC分类号： H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/36

CPC分类号： H01L33/06 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/36

摘要： A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

公开(公告)号：US12100695B2

公开(公告)日：2024-09-24

申请号：US18225643

申请日：2023-07-24

申请人： SEOUL VIOSYS CO., LTD.

发明人： Jong Min Jang ,  Chang Yeon Kim

IPC分类号： H01L25/075 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38

CPC分类号： H01L25/0756 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/382 ,  H01L33/387

摘要： A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode, a second light emitting part disposed over the first light emitting part and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a third light emitting part disposed over the second light emitting part and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode, in which the light emitting device has substantially a quadrangular shape when viewed from the top, and has first to fourth corners.