公开(公告)号：US20250063878A1

公开(公告)日：2025-02-20

申请号：US18518996

申请日：2023-11-26

Applicant: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

Inventor： Weilai LIU ,  Bingwen LI ,  Ping ZHU ,  Liang SUN

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/10 ,  H01L33/50

Abstract: The present disclosure discloses a display panel and a display apparatus. The display panel includes a substrate and at least one light-emitting structure disposed on the substrate, the light-emitting structure includes a first light-emitting element and a color conversion light-emitting element, and the first light-emitting element includes a first color light-emitting layer; and the color conversion light-emitting element and the first light-emitting element are disposed on the substrate in a stacking manner in a first direction, the first direction is a direction perpendicular to the substrate, and the color conversion light-emitting element includes a second color light-emitting layer and a third color color conversion layer disposed in the first direction in a stacking manner with the second color light-emitting layer. The present disclosure may improve light-emitting efficiency of a third color in the display panel, and improve brightness and a display effect of the display panel.

公开(公告)号：US12230734B2

公开(公告)日：2025-02-18

申请号：US17562422

申请日：2021-12-27

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/36

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer.

公开(公告)号：US20250056927A1

公开(公告)日：2025-02-13

申请号：US18926055

申请日：2024-10-24

Applicant: Silanna UV Technologies Pte Ltd

Inventor： Petar Atanackovic

IPC: H01L33/26 ,  H01L21/02 ,  H01L23/66 ,  H01L27/15 ,  H01L29/15 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/51 ,  H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34

Abstract: A transistor can include a substrate, an epitaxial oxide layer on the substrate, and a gate layer. The substrate can include a first crystalline material. The epitaxial oxide layer can include a second oxide material including: Li and one of Ni, Al, Ga, Mg, Zn and Ge; or Ni and one of Li, Al, Ga, Mg, Zn and Ge; or Mg and one of Ni, Al, Ga, and Ge; or Zn and one of Ni, Al, Ga, and Ge. The gate layer can include a third oxide material. A bandgap of the third oxide material of the gate can be wider than a bandgap of the second oxide material of the epitaxial oxide layer. The transistor can also include a source electrical contact coupled to the epitaxial oxide layer, a drain electrical contact coupled to the epitaxial oxide layer, and a first gate electrical contact coupled to the gate layer.

公开(公告)号：US20250054919A1

公开(公告)日：2025-02-13

申请号：US18427182

申请日：2024-01-30

Applicant: Intematix Corporation

Inventor： Yi-Qun Li ,  Xianglong Yuan ,  Jun-Gang Zhao

IPC: H01L25/075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/50

Abstract: A device may include a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths, where broadband light generated by the broadband LED flip chip includes a combination of the multiple narrowband light emissions, and where at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm.

公开(公告)号：US12224375B2

公开(公告)日：2025-02-11

申请号：US17631027

申请日：2020-07-24

Applicant: PLESSEY SEMICONDUCTORS LIMITED

Inventor： Jun-Youn Kim ,  Samir Mezouari ,  John A. Shannon ,  Kevin Stribley ,  Mohsin Aziz

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/46 ,  H01L33/52 ,  H01L33/58

Abstract: A light emitting diode is provided having a LED layer configured to emit pump light having a pump light wavelength from a light emitting surface, the LED layer comprising a plurality of Group III-nitride layers. A container layer is provided on the light emitting surface of the LED layer, the container surface including an opening defining a container volume through the container layer to the light emitting surface of the LED layer. A colour converting layer is provided in the container volume, the colour converting Got layer configured to absorb pump light and emit converted light of a converted light wavelength longer than the pump light wavelength. A lens is provided on the container surface over the opening, the lens having a convex surface on an opposite side of the lens to the colour converting layer. A pump light reflector laminate provided over the convex surface of the lens the pump light reflector laminate having a stop-band configured to reflect the pump light centred on a first wavelength.

公开(公告)号：US20250048786A1

公开(公告)日：2025-02-06

申请号：US18722560

申请日：2022-02-14

Applicant: Sharp Display Technology Corporation

Inventor： Keisuke KITANO ,  Kazuki GOTO ,  Ryo KITAMURA ,  Yukio TAKENAKA

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/28 ,  H10K50/115 ,  H10K50/15 ,  H10K71/15

Abstract: A red light-emitting element includes an anode, a cathode, and a red light-emitting layer, the red light-emitting layer includes a compound including Sn (IV) and a chalcogen, a quantum dot, a first compound including Sn (II) and a chalcogen of the same element as the chalcogen, and a chalcogenium ion of the same element as the chalcogen, and a substance amount rate of Sn (II) to Sn (IV) is more than 0% and equal to or less than 50%.

公开(公告)号：US20250040296A1

公开(公告)日：2025-01-30

申请号：US18783623

申请日：2024-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hyun MIN ,  DAEUN YOON ,  Won Sik YOON ,  Jae Yong LEE ,  Hogeun CHANG ,  Hyundong HA ,  Yong Seok HAN

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/00 ,  H01L33/28 ,  H01L33/30

Abstract: A semiconductor nanoparticle, a method of preparing the semiconductor nanoparticle, and an electroluminescent device including the semiconductor nanoparticle. The method of preparing the semiconductor nanoparticle includes contacting a zinc precursor and a sulfur precursor in the presence of a first particle at a predetermined temperature to form a semiconductor nanocrystal layer containing zinc sulfide on the first particle, wherein the first particle includes a Group II-VI compound including zinc, selenium, and, optionally, tellurium, or the first particle includes a Group III-V compound including indium and phosphorus. The predetermined temperature includes (e.g., is) a temperature (e.g., a reaction temperature) of greater than 300° C. and less than or equal to about 380° C., and the sulfur precursor includes a thiol compound of C3 (e.g. C9) to C50 or a combination thereof.

公开(公告)号：US20250038161A1

公开(公告)日：2025-01-30

申请号：US18916153

申请日：2024-10-15

Applicant: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC

Inventor： Min Tao ,  Liang Wang ,  Rajesh Katkar ,  Cyprian Emeka Uzoh

IPC: H01L25/16 ,  H01L21/02 ,  H01L21/321 ,  H01L23/00 ,  H01L25/10 ,  H01L25/18 ,  H01L27/12 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

Abstract: Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

公开(公告)号：US20250023332A1

公开(公告)日：2025-01-16

申请号：US18899274

申请日：2024-09-27

Applicant: Silanna UV Technologies Pte Ltd

Inventor： Johnny Cai Tang ,  Petar Atanackovic

IPC: H01S5/227 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01S5/065 ,  H01S5/10 ,  H01S5/183 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

Abstract: A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

公开(公告)号：US12199076B2

公开(公告)日：2025-01-14

申请号：US17619564

申请日：2020-06-25

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Aledia ,  Universite Grenoble Alpes

Inventor： Bruno-Jules Daudin ,  Walf Chikhaoui ,  Marion Gruart

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32

Abstract: A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle α. The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle θIII and a flux of the group-V element along a direction inclined by an angle θV with respect to the vertical axis, angles θIII and θV being smaller than angle α.