公开(公告)号：US20240421250A1

公开(公告)日：2024-12-19

申请号：US18737766

申请日：2024-06-07

Applicant: EPISTAR CORPORATION

Inventor： Yu-Hsiang YEH ,  Shih-Wei WANG

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32

Abstract: A semiconductor structure includes a first semiconductor structure having a first conductivity type, a second semiconductor structure having a second conductivity type, an active structure disposed between the first semiconductor structure and the second semiconductor structure, a stress release structure disposed between the first semiconductor structure and the active structure, and an indium-containing layer disposed between the stress release structure and the first semiconductor structure. An indium content of the indium-containing layer is greater than an indium content of the stress release structure.

公开(公告)号：US20240413142A1

公开(公告)日：2024-12-12

申请号：US18700926

申请日：2022-10-13

Applicant: Korea University Research and Business Foundation

Inventor： In Hwan LEE

IPC: H01L25/16 ,  H01L27/12 ,  H01L33/12 ,  H01L33/46 ,  H01L33/62

Abstract: Disclosed is a Light-Emitting Device-Thin Film Transistor (LED-TFT) integration structure, comprising a substrate comprising a light emitting area and a driving area; a metal reflective film formed on the substrate; a buffer layer formed on the metal reflective film; LED disposed in the light emitting area; a protective layer formed on the LED; a thin film transistor disposed in the driving area and configured to drive the LED; and an ohmic contact metal for electrically connecting a cathode of the LED with the metal reflective film, wherein the LED and the thin film transistor are integrally formed on the substrate.

公开(公告)号：US20240379901A1

公开(公告)日：2024-11-14

申请号：US18782552

申请日：2024-07-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/06 ,  G06F30/30 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/64 ,  H01S5/30 ,  H01S5/343

Abstract: An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

公开(公告)号：US20240363805A1

公开(公告)日：2024-10-31

申请号：US18485547

申请日：2023-10-12

Applicant: ENKRIS SEMICONDUCTOR, INC.

Inventor： Kai CHENG

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/12

Abstract: Disclosed are a semiconductor structure and a manufacturing method therefor. The semiconductor structure includes a first substrate; a mask layer, located on the first substrate; where the mask layer is provided with a window exposing the first substrate, the window includes an open end, and an area of an orthographic projection of the open end on a plane where the first substrate is located is less than an area of an orthographic projection of the window on the plane where the first substrate is located. When a first epitaxial layer is epitaxially grown on the second substrate, a dislocation of the first epitaxial layer terminates at the sidewall, the dislocation may not continue to extend along with a growth of the first epitaxial layer, so that a dislocation density of the semiconductor structure may be reduced, and device characteristic may be improved.

公开(公告)号：US20240339567A1

公开(公告)日：2024-10-10

申请号：US18748434

申请日：2024-06-20

Applicant: Silanna UV Technologies Pte Ltd

Inventor： Petar Atanackovic

IPC: H01L33/26 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/50

CPC classification number: H01L33/26 ,  H01L21/2011 ,  H01L33/0012 ,  H01L33/005 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/504 ,  H01L33/002

Abstract: The techniques described herein relate to an optoelectronic semiconductor light emitting device including a single crystal (AlxGa1-x)2O3 substrate including a monoclinic or corundum crystal symmetry, where 0

公开(公告)号：US12095000B2

公开(公告)日：2024-09-17

申请号：US17035913

申请日：2020-09-29

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/06 ,  G06F30/30 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/64 ,  H01L33/38 ,  H01S5/30 ,  H01S5/343

CPC classification number: H01L33/06 ,  G06F30/30 ,  H01L31/02005 ,  H01L31/022466 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/035227 ,  H01L31/035236 ,  H01L31/0392 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/08 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/642 ,  H01L33/382 ,  H01L2933/0091 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/34333

Abstract: An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

公开(公告)号：US12089477B2

公开(公告)日：2024-09-10

申请号：US18155513

申请日：2023-01-17

Applicant: LG Display Co., Ltd.

Inventor： Jonghyun Han ,  SungWook Yoon ,  MinSeob Song

IPC: H10K59/65 ,  G06F3/041 ,  H10K50/84 ,  H10K50/844 ,  H10K59/12 ,  H10K59/122 ,  H10K59/13 ,  H10K59/131 ,  H10K59/40 ,  G02F1/1333 ,  G06F1/16 ,  G09F9/30 ,  H01L27/146 ,  H01L33/12 ,  H10K50/816 ,  H10K50/828 ,  H10K59/121 ,  H10K59/123 ,  H10K59/35 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/65 ,  G06F3/0412 ,  H10K50/844 ,  H10K59/122 ,  H10K59/131 ,  H10K59/40 ,  G02F1/133305 ,  G06F1/1652 ,  G09F9/301 ,  G09G2300/0408 ,  G09G2300/0804 ,  G09G2380/02 ,  H01L27/14678 ,  H01L33/12 ,  H10K50/816 ,  H10K50/828 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/35 ,  H10K59/353 ,  H10K77/111 ,  H10K2102/00 ,  H10K2102/311

Abstract: A display device according to an embodiment of the present disclosure is described. The display device includes a see-through area for camera and a routing area disposed around the see-through area for camera. A camera module is disposed in the see-through area for camera. The routing area is overlapped by at least one data line and scan line. The display device includes a pixel area which includes the see-through area for camera and the routing area. The pixel area includes a plurality of sub-pixels including an organic light emitting element and a cathode.

公开(公告)号：US12074258B2

公开(公告)日：2024-08-27

申请号：US17332852

申请日：2021-05-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhen Zhang ,  Guangcai Yuan ,  Qi Yao ,  Mingxing Wang

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L27/156 ,  H01L33/005 ,  H01L33/12 ,  H01L33/62 ,  H01L2933/0016

Abstract: An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

公开(公告)号：US12074251B2

公开(公告)日：2024-08-27

申请号：US17240342

申请日：2021-04-26

Applicant: GLO AB

Inventor： Saket Chadda ,  Zhen Chen

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer.

公开(公告)号：US20240266472A1

公开(公告)日：2024-08-08

申请号：US18691668

申请日：2021-09-14

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Junoh SHIN ,  Jeonghyo KWON

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/12 ,  H01L33/20 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/12 ,  H01L33/20 ,  H01L33/62

Abstract: The present invention is applicable to display device-related technical fields and, for example, relates to a display device using micro LED (Light Emitting Diode) and a method of manufacturing the same. The present invention includes a substrate including a pixel area and a pad area located around the pixel area; a barrier layer located on the substrate and defining a plurality of unit pixel areas within the pixel area; a stress separation line located between the unit pixel areas on the barrier layer; a first electrode located in the unit pixel area; a semiconductor light emitting device in which a first type electrode is electrically connected to the first electrode within the unit pixel area; a coating layer formed on the semiconductor light emitting device and the barrier layer; and a second electrode electrically connected to the type second electrode of the semiconductor light emitting device on the coating layer.