公开(公告)号：US12125944B2

公开(公告)日：2024-10-22

申请号：US17510282

申请日：2021-10-25

Applicant: Meta Platforms Technologies, LLC

Inventor： Wei Sin Tan ,  Andrea Pinos ,  Xiang Yu ,  Samir Mezouari

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/18 ,  H01L33/32 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.

公开(公告)号：US20240339567A1

公开(公告)日：2024-10-10

申请号：US18748434

申请日：2024-06-20

Applicant: Silanna UV Technologies Pte Ltd

Inventor： Petar Atanackovic

IPC: H01L33/26 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/50

CPC classification number: H01L33/26 ,  H01L21/2011 ,  H01L33/0012 ,  H01L33/005 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/504 ,  H01L33/002

Abstract: The techniques described herein relate to an optoelectronic semiconductor light emitting device including a single crystal (AlxGa1-x)2O3 substrate including a monoclinic or corundum crystal symmetry, where 0

公开(公告)号：US12087880B2

公开(公告)日：2024-09-10

申请号：US17652019

申请日：2022-02-22

Applicant: Silanna UV Technologies Pte Ltd

Inventor： Petar Atanackovic

IPC: H01L33/26 ,  H01L21/02 ,  H01L23/66 ,  H01L27/15 ,  H01L29/15 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/51 ,  H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34

CPC classification number: H01L33/26 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02458 ,  H01L21/02507 ,  H01L23/66 ,  H01L27/15 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7869 ,  H01L33/002 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34 ,  H01L29/778 ,  H01L29/7786 ,  H01L2223/6627

Abstract: The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, including: a substrate; a first epitaxial oxide layer comprising (Nix1Mgy1Zn1-x1-y1)(Alq1Ga1-q1)2O4 wherein 0≤x1≤1, 0≤y1≤1 and 0≤q1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1-x2-y2)(Alq2Ga1-q2)2O4 wherein 0≤x2≤1, 0≤y2≤1 and 0≤q2≤1. In some cases, at least one condition selected from x1≠x2, y1≠y2, and q1≠q2 is satisfied.

公开(公告)号：US12040424B2

公开(公告)日：2024-07-16

申请号：US17416854

申请日：2019-11-29

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Mariia Rozhavskaia

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/18

CPC classification number: H01L33/0075 ,  H01L33/12 ,  H01L33/18

Abstract: A process for fabricating a growth substrate comprises preparing a donor substrate by forming a crystalline semiconductor surface layer on a seed layer of a carrier. This preparation comprises forming the surface layer as a plurality of alternations of an InGaN primary layer and of an AlGaN secondary layer, the indium concentration and the thickness of the primary layers and the aluminum concentration and the thickness of the secondary layers being selected so that a homogeneous AlInGaN layer that is equivalent, in terms of concentration of aluminum and indium, to the surface layer has a natural lattice parameter different from the lattice parameter of the seed layer.

公开(公告)号：US20240213404A1

公开(公告)日：2024-06-27

申请号：US18319471

申请日：2023-05-17

Applicant: ENKRIS SEMICONDUCTOR, INC

Inventor： Liyang Zhang ,  Kai Cheng

IPC: H01L33/18 ,  H01L33/06 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L33/18 ,  H01L33/06 ,  H01L33/42 ,  H01L33/502 ,  H01L33/60

Abstract: A light-emitting device and a method for manufacturing a light-emitting device are provided. The light-emitting device includes: a substrate, provided with at least one light guide channel through the substrate, wherein each of the at least one light guide channel comprises a first opening and a second opening opposite to the first opening, an area of a section of the second opening is greater than an area of a section of the first opening, the substrate comprises a first substrate and a second substrate stacked, and the second substrate is configured to control a direction of light output through the light guide channel; and a light-emitting structure, provided at a side of the substrate where the first opening is located, wherein the light-emitting structure comprises at least one light-emitting unit, each of the at least one light guide channel corresponds to at least one light-emitting unit.

公开(公告)号：US20240194827A1

公开(公告)日：2024-06-13

申请号：US18534682

申请日：2023-12-10

Applicant: SEIKO EPSON CORPORATION

Inventor： Masamitsu MOCHIZUKI

IPC: H01L33/18 ,  G03B21/20 ,  H01L33/60

CPC classification number: H01L33/18 ,  G03B21/2033 ,  H01L33/60

Abstract: A light emitting device including a first semiconductor layer, a second semiconductor layer, a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a photonic crystal layer disposed on a side of the second semiconductor layer opposite to the light emitting layer is provided. The photonic crystal layer includes a first region provided with a first photonic crystal that causes light emitted by the light emitting layer to resonate in a direction orthogonal to a laminating direction of the first semiconductor layer and the light emitting layer and does not cause the light to be emitted in a direction different from the orthogonal direction, and a second region provided with a second photonic crystal that does not overlap the first region when viewed in the laminating direction and causes the light to be emitted in a direction different from the orthogonal direction.

公开(公告)号：US20240153986A1

公开(公告)日：2024-05-09

申请号：US18495045

申请日：2023-10-26

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Ludovic Dupre ,  Amélie Dussaigne ,  Carole Pernel ,  Fabien Rol

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/00 ,  H01L33/18 ,  H01L33/32

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/325

Abstract: A growth substrate adapted for making by epitaxy an array of InGaN based diodes, including mesas M(i), made of GaN based crystalline materials, each including N doped layers, with N≥2, separated in pairs by an insulation intermediate layer made of a non-porous material, and each having a free upper face adapted for making a diode of the array by epitaxy; the mesas being configured according to at least three different categories including: a so-called M(N) mesas category where the N doped layers are porous; a so-called M(0) mesas category where none of the doped layers (13, 15) is porous; and a so-called M(n) mesas category where n doped layers are porous, with 1≤n

公开(公告)号：US20240120446A1

公开(公告)日：2024-04-11

申请号：US18482554

申请日：2023-10-06

Applicant: Google LLC

Inventor： Benjamin Leung ,  Miao-Chan Tsai ,  Sheila Hurtt ,  Gang He ,  Richard Peter Schneider, JR.

IPC: H01L33/32 ,  G02B3/04 ,  G02B27/30 ,  H01L33/00 ,  H01L33/18 ,  H01L33/60

CPC classification number: H01L33/325 ,  G02B3/04 ,  G02B27/30 ,  H01L33/0008 ,  H01L33/18 ,  H01L33/60

Abstract: The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).

公开(公告)号：USRE49869E1

公开(公告)日：2024-03-12

申请号：US17214607

申请日：2021-03-26

Applicant: iBeam Materials, Inc.

Inventor： Vladimir Matias ,  Christopher Yung

IPC: H01L33/32 ,  H01L21/02 ,  H01L31/00 ,  H01L31/036 ,  H01L33/00 ,  H01L33/18 ,  H01L33/64 ,  H01L33/12 ,  H01L33/60

CPC classification number: H01L33/32 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L31/00 ,  H01L31/036 ,  H01L33/007 ,  H01L33/18 ,  H01L33/644 ,  H01L33/12 ,  H01L33/60

Abstract: A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

公开(公告)号：US20240079386A1

公开(公告)日：2024-03-07

申请号：US18262348

申请日：2022-06-02

Applicant: LG ELECTRONICS INC.

Inventor： Myungwhun CHANG ,  Yanghyun KIM ,  Donghyun KIM ,  Sangwon WOO ,  Jinseong KIM

IPC: H01L25/075 ,  H01L33/18 ,  H01L33/38

CPC classification number: H01L25/0753 ,  H01L33/18 ,  H01L33/38

Abstract: The present disclosure is applicable to a display device-related technical field, and relates to, for example, a surface light source device using a micro light-emitting diode (LED). The present disclosure comprises: a wiring board having a plurality of unit pixel regions defined; a wiring electrode comprising a first wiring electrode located in a first pixel region on the wiring board, and a second wiring electrode located in a second pixel region on the wiring board; a first light-emitting element electrically connected to the first wiring electrode; and a second light-emitting element electrically connected to the second wiring electrode, wherein the first light-emitting element and the second light-emitting element have a tilt angle formed by a side surface being tilted to one side, and the first light-emitting element and the second light-emitting element may be symmetrically positioned with respect to the tilt angle.