公开(公告)号：US20230138761A1

公开(公告)日：2023-05-04

申请号：US17918378

申请日：2021-04-16

申请人： Lumileds LLC

发明人： Robert Armitage ,  Isaac Wildeson

IPC分类号： H01L33/44 ,  H01L33/32

摘要： A red LED includes a semiconductor LED layer having an active InGaN layer with intrinsic emission spectrum having LDom in a range of from 580 nm to 620 nm. A filter is positioned over the semiconductor LED layer to filter shorter wavelengths of the intrinsic emission spectrum and shift LDom by between 5 nm to 20 nm to a longer wavelength.

公开(公告)号：US11641005B2

公开(公告)日：2023-05-02

申请号：US17328732

申请日：2021-05-24

申请人： EPISTAR CORPORATION

发明人： Yi-Lun Chou ,  Chih-Hao Chen

IPC分类号： H01L33/32 ,  H01L21/78 ,  H01L31/18 ,  H01L33/00 ,  H01L33/36 ,  H01L33/24 ,  H01L33/40 ,  H01L33/44

摘要： A method of manufacturing a light-emitting element includes: providing a substrate, wherein the substrate includes a top surface with a first area and a second area; introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer includes a first crystal quality and the second layer includes a second crystal quality, the first crystal quality is different from the second crystal quality; and dicing the substrate along the second area.

公开(公告)号：US20230130445A1

公开(公告)日：2023-04-27

申请号：US17510282

申请日：2021-10-25

申请人： Meta Platforms Technologies, LLC

发明人： Wei Sin TAN ,  Andrea PINOS ,  Xiang YU ,  Samir MEZOUARI

IPC分类号： H01L33/24 ,  H01L25/075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

摘要： A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.

公开(公告)号：US20230127640A1

公开(公告)日：2023-04-27

申请号：US18085993

申请日：2022-12-21

申请人： XIAMEN SAN'AN OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Shuiqing LI ,  Weihua DU ,  Chaohsu LAI ,  Heqing DENG

IPC分类号： H01L33/32 ,  H01L33/02

摘要： A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional layer that are sequentially disposed on the n-type layer in such order. The n-type layer, the first transitional layer, the second transitional layer, the third transitional layer and the light-emitting unit respectively have a bandgap of Egn, a bandgap of Eg1, a bandgap of Eg2, a bandgap of Eg3 and a bandgap of Ega which satisfy a relationship of Egn≥Eg1>Eg2>Eg3>Ega.

公开(公告)号：US11637221B2

公开(公告)日：2023-04-25

申请号：US17133707

申请日：2020-12-24

申请人： ASAHI KASEI KABUSHIKI KAISHA

发明人： Aya Yokoyama ,  Yoshihito Hagihara ,  Ryosuke Hasegawa ,  Akira Yoshikawa ,  Ziyi Zhang ,  Tomohiro Morishita

IPC分类号： H01L33/32 ,  H01L33/40 ,  H01L33/06 ,  H01L33/20

摘要： To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

公开(公告)号：US20230124414A1

公开(公告)日：2023-04-20

申请号：US17696447

申请日：2022-03-16

申请人： Applied Materials, Inc.

发明人： Michel Khoury ,  Ria Someshwar

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/18

摘要： Exemplary semiconductor structures may include a silicon-containing substrate. The structures may include a layer of a metal nitride overlying the silicon-containing substrate. The layer of the metal nitride may include a plurality of features. The structures may include a gallium nitride structure overlying the layer of the metal nitride.

公开(公告)号：US11631783B2

公开(公告)日：2023-04-18

申请号：US17480920

申请日：2021-09-21

申请人： OSRAM OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC分类号： H01L33/40 ,  H01L33/20 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/08

摘要： In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

公开(公告)号：US20230114186A1

公开(公告)日：2023-04-13

申请号：US17879731

申请日：2022-08-02

申请人： KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION

发明人： Young Rag DO ,  Min Ji KO

IPC分类号： A61N5/06 ,  H01L33/00 ,  H01L33/08 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/52

摘要： The present invention relates to a flexible skin patch equipped with an ultra-thin LED assembly that emits light in a specific wavelength range and an invention for manufacturing the same, and is related to an invention capable of providing a flexible skin patch that has the excellent effect of promoting vitamin D production in a localized area of the skin, and has the effect of alleviating or treating local skin psoriasis, fungi, fungal tumors and eczema, and has excellent antiviral effect, and is easy to attach and detach.

公开(公告)号：US11626531B2

公开(公告)日：2023-04-11

申请号：US16643463

申请日：2018-08-24

申请人： OSRAM OLED GmbH

发明人： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn ,  Ingrid Koslow

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/32

摘要： A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

公开(公告)号：US20230100683A1

公开(公告)日：2023-03-30

申请号：US17802342

申请日：2021-02-26

申请人： MIE UNIVERSITY

发明人： Hideto MIYAKE ,  Ding WANG ,  Kenjiro UESUGI

IPC分类号： H01L33/32 ,  H01L33/00

摘要： A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×108 cm−2.