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公开(公告)号：US12029137B2
公开(公告)日：2024-07-02
申请号：US17521017
申请日：2021-11-08
发明人： Sumio Ikegawa
IPC分类号： H01L43/02 , G11C11/16 , H01F10/32 , H01F41/32 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85
CPC分类号： H10N50/80 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F41/32 , H10N50/01 , H10N50/10 , H10N50/85
摘要： A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
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公开(公告)号：US20240147869A1
公开(公告)日：2024-05-02
申请号：US17974148
申请日：2022-10-26
申请人： Harry Joseph TRODAHL , William Freeman HOLMES-HEWETT , Jackson David MILLER , Catherine Margaret Walker POT , Benjamin John RUCK , Eva-Maria Johanna ANTON
发明人： Harry Joseph TRODAHL , William Freeman HOLMES-HEWETT , Jackson David MILLER , Catherine Margaret Walker POT , Benjamin John RUCK , Eva-Maria Johanna ANTON
CPC分类号： H01L43/02 , H01L27/222 , H01L43/10
摘要： A switchable magnetic device comprising a first ferromagnetic material or layer comprising or consisting of a first rare earth nitride alloy, the first rare earth nitride alloy including at least two lanthanide species; a second ferromagnetic material or layer comprising or consisting of a second rare earth nitride alloy, the second rare earth nitride alloy including at least two lanthanide species; a blocking material or layer located between the first and second ferromagnetic materials or layers. The first and second ferromagnetic materials or layers have different coercive fields to permit independent control of a magnetic alignment of the first and second ferromagnetic materials or layers; and a remanent magnetic moment of the first ferromagnetic material or layer and a remanent magnetic moment of the second ferromagnetic material or layer spatially restrict or confine a peripheral magnetic field generated when the first and second ferromagnetic materials or layers are in an anti-aligned magnetic state to permit contrasting peripheral magnetic fields to be generated when the first and second ferromagnetic materials or layers are in anti-aligned and aligned magnetic states.
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公开(公告)号：US20240130242A1
公开(公告)日：2024-04-18
申请号：US18046162
申请日：2022-10-13
发明人： Ailian Zhao , Wu-Chang Tsai , Ashim Dutta , Chih-Chao Yang
CPC分类号： H01L43/08 , H01L23/481 , H01L27/222 , H01L43/02 , H01L43/12
摘要： Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming at least one magnetic tunnel junction (MTJ) stack on top of a supporting structure; forming a conformal liner surrounding a sidewall of the MTJ stack; forming a first dielectric layer surrounding the conformal liner; selectively forming a metal oxide layer on top of the conformal liner and the first dielectric layer, the metal oxide layer having at least a first opening that exposes a top surface of the MTJ stack; and forming a top contact contacting the top surface of the MTJ stack through the first opening in the metal oxide layer. An MRAM structure formed thereby is also provided.
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公开(公告)号：US20240065108A1
公开(公告)日：2024-02-22
申请号：US17944242
申请日：2022-09-14
发明人： Hui-Lin Wang , Ching-Hua Hsu , Chen-Yi Weng , Jing-Yin Jhang , Po-Kai Hsu
CPC分类号： H01L43/12 , H01L43/08 , G11C11/161 , H01L43/02 , H01L27/222 , H01L43/10
摘要： The high-density MRAM device of the present invention has a second interlayer dielectric (ILD) layer covering the capping layer in the MRAM cell array area and the logic area. The thickness of the second ILD layer in the MRAM cell array area is greater than that in the logic area. The composition of the second ILD layer in the logic area is different from the composition of the second ILD layer in the MRAM cell array area.
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公开(公告)号：US20240057483A1
公开(公告)日：2024-02-15
申请号：US17903998
申请日：2022-09-06
发明人： Hui-Lin Wang
摘要： A magnetic memory device includes a bottom electrode layer, a magnetic tunneling junction (MTJ) stack disposed on the bottom electrode layer, a capping layer disposed on the MTJ stack, and a top electrode layer disposed on the capping layer. The top electrode layer comprises RuO2.
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公开(公告)号：US20240032435A1
公开(公告)日：2024-01-25
申请号：US17814243
申请日：2022-07-22
CPC分类号： H01L43/08 , H01L27/222 , H01L43/02 , H01L43/12 , G11C11/161
摘要： Embodiments of present invention provide a method of forming a MRAM structure. The method includes patterning a bottom electrode layer and a first ferromagnetic layer on top of the bottom electrode layer; depositing a dielectric layer, the dielectric layer covering the bottom electrode layer and the first ferromagnetic layer; creating an opening in the dielectric layer, the opening exposing a portion of the first ferromagnetic layer; forming a tunnel barrier layer inside the opening; forming a second ferromagnetic layer on top of the tunnel barrier layer; patterning the tunnel barrier layer and the second ferromagnetic layer; and forming a top electrode layer on top of the second ferromagnetic layer. Structures formed thereby are also provided.
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公开(公告)号：US20240020520A1
公开(公告)日：2024-01-18
申请号：US17865966
申请日：2022-07-15
申请人： TDK CORPORATION
发明人： Shogo YAMADA , Keita SUDA , Yukio TERASAKI , Tomoyuki SASAKI
CPC分类号： G06N3/063 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A memristor includes a first variable conductance element and a second variable conductance element. A minimum value of conductance of the second variable conductance element during reading is larger than a maximum value of conductance of the first variable conductance element during reading. In the memristor, a first read path when the conductance of the first variable conductance element is read merges with a second read path when the conductance of the second variable conductance element is read.
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公开(公告)号：US11864466B2
公开(公告)日：2024-01-02
申请号：US17385264
申请日：2021-07-26
发明人： Shy-Jay Lin , Chwen Yu , William J. Gallagher
IPC分类号： G11C11/16 , H01L43/08 , H01L43/12 , H01L43/02 , H10N50/01 , H01F10/32 , H01F41/34 , H10B61/00 , H10N50/10 , H10N50/80
CPC分类号： H10N50/01 , G11C11/161 , H01F10/3254 , H01F41/34 , H10B61/00 , H10B61/22 , H10N50/10 , H10N50/80
摘要： In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode. The second insulating cover layer has an oxygen getter property.
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公开(公告)号：US20230402079A1
公开(公告)日：2023-12-14
申请号：US17806790
申请日：2022-06-14
CPC分类号： G11C11/161 , H01L43/08 , H01L43/02 , H01L43/12 , H01L27/222
摘要： Embodiments of the invention include a semiconductor structure with a first magneto-resistive random access memory (MRAM) pillar with a bottom electrode layer, a reference layer connected above the bottom electrode layer, a free layer, and a tunnel barrier between the reference layer and the free layer. The MRAM pillar includes a pillar diameter. The semiconductor structure also includes a coaxial top electrode with a top diameter that is less than the pillar diameter.
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公开(公告)号：US20230397503A1
公开(公告)日：2023-12-07
申请号：US17874593
申请日：2022-07-27
发明人： CHIH-WEN TANG , Chih-Huang LAI , Wei-Chih HUANG , Chun-Liang YANG , Kuan-Ling OU
CPC分类号： H01L43/10 , H01L27/222 , H01L43/02 , H01F10/3268 , H01F10/3254 , H01F10/3286 , C22C38/10
摘要： Provided is a ferromagnetic free layer, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the ferromagnetic free layer, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; the additive metal comprises Mo, Re or a combination thereof, and a thickness of the ferromagnetic free layer is more than or equal to 1.5 nm and less than 2.5 nm. The ferromagnetic free layer can be applied to a MTJ structure as a single layer, and has sufficient thermal stability for maintaining good magnetic properties after thermal treatment, which makes sure that the MTJ structure can exert normal recording function.
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