公开(公告)号：US20240016067A1

公开(公告)日：2024-01-11

申请号：US17885521

申请日：2022-08-10

申请人： United Microelectronics Corp.

发明人： Chih-Wei Kuo ,  Chung Yi Chiu ,  Yi-Wei Tseng ,  Hsuan-Hsu Chen ,  Chun-Lung Chen

IPC分类号： H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14

CPC分类号： H01L43/04 ,  H01L27/222 ,  H01L43/06 ,  H01L43/14

摘要： A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protection layer and the second protection layer are located on the sidewall of the MTJ stack. The first protection layer is located between the second protection layer and the MTJ stack. There is a notch between the second protection layer and the SOT layer.

公开(公告)号：US20240005973A1

公开(公告)日：2024-01-04

申请号：US17854785

申请日：2022-06-30

申请人： Western Digital Technologies, Inc.

发明人： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Susumu OKAMURA ,  Kuok San HO ,  Hisashi TAKANO ,  Randy G. SIMMONS

IPC分类号： G11C11/16 ,  H01L43/10 ,  G11B5/39 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/22

CPC分类号： G11C11/161 ,  H01L43/10 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/222

摘要： The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.

公开(公告)号：US20230354719A1

公开(公告)日：2023-11-02

申请号：US17732548

申请日：2022-04-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shy-Jay Lin ,  Nuo Xu ,  Yen-Lin Huang

IPC分类号： H01L43/04 ,  H01L27/22 ,  H01L43/06

CPC分类号： H01L43/04 ,  H01L27/222 ,  H01L43/06

摘要： A memory device including a pair of magnetic conductive posts, a Spin-Hall-Effect-assisted (SHE-assisted) layer, and a magnetic tunneling junction (MTJ) structure. The Spin-Hall-Effect-assisted (SHE-assisted) layer is disposed over and electrically connected to the pair of magnetic conductive posts. The magnetic tunneling junction (MTJ) structure has in-plane magnetic anisotropy, wherein the MTJ structure is disposed on the SHE-assisted layer, and the pair of magnetic conductive posts provide an in-plane magnetic field during a write operation of the MTJ structure.

公开(公告)号：US20230320232A1

公开(公告)日：2023-10-05

申请号：US17723495

申请日：2022-04-19

申请人： UNITED MICROELECTRONICS CORP.

发明人： Hung-Chan Lin

IPC分类号： H01L43/14 ,  H01L27/22 ,  H01L43/06 ,  H01L43/04

CPC分类号： H01L43/14 ,  H01L27/222 ,  H01L43/04 ,  H01L43/06

摘要： A method for fabricating semiconductor device includes the steps of forming a first inter-metal dielectric (IMD) layer, forming two via holes and a trench in the first IMD layer, forming a metal layer in the two via holes and the trench for forming a metal interconnection and a spin orbit torque (SOT) layer, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first hard mask on the MTJ, forming a second hard mask on the first hard mask, forming a cap layer adjacent to the MTJ, and forming a second IMD layer around the cap layer.

公开(公告)号：US20230292630A1

公开(公告)日：2023-09-14

申请号：US17966183

申请日：2022-10-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Siyeon CHO ,  Taeyoung KIM ,  Hyunmog PARK ,  Bongyong LEE ,  Yukio HAYAKAWA

IPC分类号： H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  G11C11/16 ,  G11C11/18

CPC分类号： H01L43/04 ,  G11C11/161 ,  G11C11/18 ,  H01L27/222 ,  H01L43/06 ,  H01L43/10

摘要： A magnetic memory device includes a loop-type magnetic track having a first part and a second part that are arranged in a counterclockwise direction, a first conductive line on a top surface of the first part, and a second conductive line on a bottom surface of the second part. The magnetic track includes a lower magnetic layer, a spacer layer, and an upper magnetic layer that are sequentially stacked. Each of the first and second conductive lines includes heavy metal. Each of the first and second conductive lines is configured to generate spin-orbit torque caused by current that flows therein. The spin-orbit torque causes magnetic domains in the magnetic track to move in a clockwise direction or in the counterclockwise direction.

公开(公告)号：US11672185B2

公开(公告)日：2023-06-06

申请号：US17516469

申请日：2021-11-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ji-Feng Ying ,  Jhong-Sheng Wang ,  Tsann Lin

IPC分类号： G11C7/00 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  G11C11/16 ,  H01L27/22 ,  H01L43/04

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/329 ,  H01F10/3254 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12 ,  H01L43/04

摘要： A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.

公开(公告)号：US11668766B2

公开(公告)日：2023-06-06

申请号：US16878967

申请日：2020-05-20

申请人： Melexis Technologies SA

发明人： Appolonius Jacobus Van Der Wiel

IPC分类号： G01R33/00 ,  G01R33/02 ,  H01L23/528 ,  H01L23/58 ,  H01L23/522 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14

CPC分类号： G01R33/0011 ,  G01R33/02 ,  H01L23/528 ,  H01L23/5226 ,  H01L23/58 ,  H01L43/04 ,  H01L43/065 ,  H01L43/14

摘要： A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

公开(公告)号：US20230145391A1

公开(公告)日：2023-05-11

申请号：US17694960

申请日：2022-03-15

申请人： SHANDONG UNIVERSITY

发明人： Yufeng Tian ,  Shishen Yan ,  Yanxue Chen ,  Lihui Bai ,  Qikun Huang

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  G11C11/16 ,  H01L27/22 ,  H01L43/04

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14

摘要： A ferromagnetic free layer, a preparation method and an application thereof are provided, where the ferromagnetic layer includes a magnetic film alloy, and the magnetic film alloy includes multiple layers of laminated films. A thickness of each of the films decreases gradually from a first end to a second end of the magnetic film alloy, so as to break in-plane structural symmetry of the magnetic film alloy, and the films include heavy metal films and ferromagnetic metal films, where out-of-plane crystal symmetry of the magnetic film alloy is broken by means of component gradients. When a current is applied in plane of the magnetic film alloy, a spin orbit torque will be generated, which directly drives the magnetic moment of the magnetic film alloy to undergo a deterministic magnetization reversal.

公开(公告)号：US11641782B2

公开(公告)日：2023-05-02

申请号：US17065946

申请日：2020-10-08

申请人： Korea University Research and Business Foundation

发明人： Young Keun Kim ,  Gyu Won Kim

IPC分类号： H01L43/10 ,  C22C27/02 ,  C22C27/04 ,  C23C14/14 ,  C23C14/35 ,  C23C14/58 ,  H01F10/32 ,  H01F41/30 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14

摘要： The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.

公开(公告)号：US20230129179A1

公开(公告)日：2023-04-27

申请号：US17508706

申请日：2021-10-22

申请人： Texas Instruments Incorporated

发明人： Keith Ryan Green ,  Erika Lynn Mazotti ,  William David French ,  Ricky Alan Jackson

IPC分类号： G01R33/07 ,  H01L43/14 ,  H01L43/06 ,  H01L43/04 ,  G01R33/00

摘要： A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.