公开(公告)号：US20230389346A1

公开(公告)日：2023-11-30

申请号：US17834966

申请日：2022-06-08

Applicant: National Yang Ming Chiao Tung University

Inventor： Pei-Wen LI ,  I-Hsiang WANG ,  Po-Yu HONG

IPC: H01L51/50 ,  H01L51/05 ,  C01B33/12 ,  C01G17/00 ,  B82Y30/00 ,  B82Y10/00

CPC classification number: H01L51/502 ,  H01L51/0512 ,  C01B33/12 ,  C01G17/00 ,  B82Y30/00 ,  B82Y10/00 ,  C01P2004/64

Abstract: The present disclosure relates to structures and methods of quantum devices. A quantum device comprises a substrate with an insulation surface and at least one quantum component disposed on the insulation surface of the substrate. The at least one quantum component may comprise multiple plateau members and at least one quantum dot. Each plateau member is disposed at an angle against an adjacent plateau member. Each quantum dot is formed within an insulation body and disposed at an included-angle location of two adjacent plateau members of the multiple plateau members. In addition, the at least one quantum component is operable under high temperature, such as above 4 K.

公开(公告)号：US11793028B2

公开(公告)日：2023-10-17

申请号：US17743379

申请日：2022-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jin-Kwang Kim ,  Sang-Joon Seo ,  Seung-Hun Kim ,  Seongmin Wang

IPC: H01L51/52 ,  H01L51/05 ,  H10K50/844 ,  H10K10/46 ,  H01L23/31 ,  H01L21/033 ,  H01L21/027 ,  H01L21/471 ,  H01L21/02 ,  H10K50/00 ,  H10K50/15 ,  H10K50/16 ,  H10K59/122

CPC classification number: H10K50/8445 ,  H10K10/476 ,  H01L21/0271 ,  H01L21/02365 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/471 ,  H01L23/3192 ,  H10K50/00 ,  H10K50/156 ,  H10K50/166 ,  H10K50/844 ,  H10K59/122

Abstract: An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer; an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

公开(公告)号：US11659722B2

公开(公告)日：2023-05-23

申请号：US16226209

申请日：2018-12-19

Applicant: Intel Corporation

Inventor： Willy Rachmady ,  Prashant Majhi ,  Ravi Pillarisetty ,  Elijah Karpov ,  Brian Doyle ,  Anup Pancholi ,  Abhishek Sharma

IPC: H10K19/20 ,  H01L27/12 ,  H01L27/28 ,  H01L29/66 ,  H01L29/786 ,  H01L51/05 ,  H01L51/10

CPC classification number: H01L27/286 ,  H01L27/124 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/283 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0558 ,  H01L51/102

Abstract: Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.

公开(公告)号：US11637210B2

公开(公告)日：2023-04-25

申请号：US16771400

申请日：2018-12-11

Applicant: PRAGMATIC PRINTING LTD

Inventor： Feras Alkhalil ,  Richard Price ,  Brian Cobb

IPC: H01L29/872 ,  H01L27/06 ,  H01L29/417 ,  H01L29/47 ,  H01L29/66 ,  H01L29/786 ,  H01L51/05 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24

Abstract: A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

公开(公告)号：US20230118692A1

公开(公告)日：2023-04-20

申请号：US17809336

申请日：2022-06-28

Applicant: The Trustees of the University of Pennsylvania ,  Monell Chemical Senses Center

Inventor： Alan T. Johnson ,  Nicholas J. Kybert ,  George Preti ,  Katharine A. Prigge ,  Janos L. Tanyi ,  Cynthia Otto

IPC: G01N27/414 ,  G01N33/53 ,  G01N33/543 ,  H01L51/00 ,  G01N33/497 ,  G01N33/574 ,  H01L51/05

Abstract: Provided are devices and methods to detect the presence of volatile organic compounds related to the presence of a disease state in a biological sample. The devices may include a detection moiety such as a polynucleoide in electronic communication with a semiconductor such as graphene or a carbon nanotube.

公开(公告)号：US11631824B2

公开(公告)日：2023-04-18

申请号：US17226016

申请日：2021-04-08

Applicant: University of Massachusetts

Inventor： Jun Yao ,  Derek R. Lovley ,  Tianda Fu

IPC: G11C11/54 ,  H01L51/05 ,  G11C13/00 ,  H01L51/00

Abstract: A memristive device includes a biomaterial comprising protein nanowires and at least two electrodes in operative arrangement with the biomaterial such that an applied voltage induces conductance switching. An artificial neuron or an artificial synapse includes a memrisitive device with the electrodes configured to apply a pulsed voltage configured to mimic an action-potential input.

公开(公告)号：US11631818B2

公开(公告)日：2023-04-18

申请号：US17098493

申请日：2020-11-16

Applicant: META PLATFORMS TECHNOLOGIES, LLC

Inventor： Tingling Rao ,  Lafe Purvis ,  Tanya Malhotra ,  Andrew John Ouderkirk

IPC: H01L51/00 ,  H01L51/05

Abstract: An organic field effect transistor includes a channel structure having a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer, where a charge carrier mobility varies along a thickness direction of the channel structure. The channel structure may define an active area between a source and a drain of the transistor and may include alternating layers of at least two photoalignment layers and at least two organic semiconductor layers. Each photoalignment layer is configured to influence an orientation of molecules within an overlying organic semiconductor layer and hence impact the mobility of charge carriers within the device active area while also advantageously decreasing the OFF current of the device.

公开(公告)号：US11626489B2

公开(公告)日：2023-04-11

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20230041969A1

公开(公告)日：2023-02-09

申请号：US17394515

申请日：2021-08-05

Applicant: MELLANOX TECHNOLOGIES, LTD.

Inventor： Elad Mentovich ,  Itshak Kalifa

IPC: G11C11/404 ,  H01L51/00 ,  H01L51/05 ,  G11C11/4096

Abstract: A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.

公开(公告)号：US20230040758A1

公开(公告)日：2023-02-09

申请号：US17782728

申请日：2020-12-22

Applicant: NORTHWESTERN UNIVERSITY ,  THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

Inventor： Mark C. Hersam ,  Megan E. Beck ,  Vinod K. Sangwan ,  Amit R. Trivedi ,  Ahish Shylendra

IPC: G06N3/063 ,  H01L51/00 ,  H01L51/05 ,  G06N3/04

Abstract: A GHeT includes a bottom gate formed on a substrate; a first dielectric layer (DL) formed on the bottom gate; a monolayer film formed of an atomically thin material on the first DL; a bottom contact (BC) formed on part of the monolayer film; a second DL formed on the BC; a top contact (TC) formed on the second DL on top of the BC; a network of CNTs formed on the TC and the monolayer film, to define an overlap region with the monolayer film; a third DL formed on the CNT network, the monolayer film and the TC; and a top gate formed on the third DL and overlapping with the overlap region. Such GHeT design allows gate tunability of Gaussian peak position, height and width that define Gaussian transfer characteristic, thereby enabling simplified circuit architectures for various spiking neuron functions for emerging neuromorphic applications.