公开(公告)号：US20230101190A1

公开(公告)日：2023-03-30

申请号：US18077234

申请日：2022-12-08

申请人： Chen-Fu CHU

发明人： Chen-Fu CHU

IPC分类号： H01L25/075 ,  H01L27/15 ,  H01L33/56 ,  H01L33/50 ,  H01L33/62 ,  H01L33/36 ,  H01L25/16 ,  H01L33/52 ,  C23C14/34 ,  B05C5/02 ,  H01L21/78 ,  H01S5/0234 ,  H01L33/44 ,  B05C9/14 ,  C23C16/50 ,  C23C14/14 ,  H01L33/00 ,  H01S5/023 ,  H01S5/0235 ,  H01L33/58 ,  H01L31/16 ,  B05C9/12 ,  C23C16/455 ,  H01L21/304 ,  H01L33/60 ,  H01L33/64 ,  H01S5/02234 ,  H01S5/02232 ,  H01S5/0233 ,  H01L33/32

摘要： Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.

公开(公告)号：US20220416900A1

公开(公告)日：2022-12-29

申请号：US17857397

申请日：2022-07-05

申请人： Marvell Asia Pte Ltd.

发明人： Ding Liang ,  Mark Patterson ,  Roberto Coccioli ,  Radhakrishnan L. Nagarajan

IPC分类号： H04B10/40 ,  G02B6/42 ,  H01S5/02 ,  H01S5/0234

摘要： An optical transceiver includes a silicon photonics substrate, transmitter circuitry, and receiver circuitry that are heterogeneously integrated. The transmitter circuitry includes a plurality of laser devices formed on the silicon photonics substrate, each of the plurality of laser devices configured to generate a respective laser light, a plurality of modulators formed on the silicon photonics substrate, each of the plurality of modulators configured to modulate the laser lights based on driver signals and output, from the silicon photonics substrate, the modulated laser lights, and a driver formed on the silicon photonics substrate and configured to generate the driver signals. The receiver circuitry includes a photodetector configured to receive a plurality of optical signals and convert the plurality of optical signals to respective electrical signals and a transimpedance amplifier device configured to receive the electrical signals and output the electrical signals from the silicon photonics substrate as electrical outputs.

公开(公告)号：US20220360039A1

公开(公告)日：2022-11-10

申请号：US17764912

申请日：2020-09-30

申请人： OSRAM Opto Semiconductors GmbH ,  Lumus Ltd.

发明人： Ann Russell ,  Yochay Danziger ,  Jörg Erich Sorg ,  Hubert Halbritter ,  Alan Lenef

IPC分类号： H01S5/02255 ,  H01S5/023 ,  H01S5/40 ,  H01S5/02335 ,  H01S5/0234 ,  H01S5/02257

摘要： A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.

公开(公告)号：US20220344893A1

公开(公告)日：2022-10-27

申请号：US17641164

申请日：2019-12-04

申请人： Mitsubishi Electric Corporation

发明人： Chikara WATATANI ,  Motoharu MIYASHITA ,  Takehiro NISHIDA

IPC分类号： H01S5/0237 ,  H01S5/0234 ,  H01S5/22 ,  H01S5/042

摘要： Provided here are: semiconductor layers comprised of an n-type cladding layer formed on a surface of an n-type GaAs substrate, active layers formed on surfaces of the n-type cladding layer, p-type cladding layers formed on surfaces of the active layers, and p-type contact layers formed on surfaces of the p-type cladding layers, the p-type cladding layers and the p-type contact layers being formed to have a ridges; insulating films covering surfaces of the semiconductor layers but having openings on surfaces of the p-type contact layer; and conductive layers connected to the p-type contact layers through the openings, the conductive layers being formed on surfaces of the insulating films to cover planar portions provided in the semiconductor layers adjacently to the ridges; wherein, together with the conductive layers, convex sidewalls are provided to be placed over portions of the planar portions at their sides nearer to the ridges.

公开(公告)号：US11424595B2

公开(公告)日：2022-08-23

申请号：US16820263

申请日：2020-03-16

申请人： OEpic SEMICONDUCTORS, INC

发明人： Yi-Ching Pao ,  Majid Riaziat ,  Ta-Chung Wu ,  Wilson Kyi ,  James Pao

IPC分类号： H01S5/183 ,  H01S5/026 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/34 ,  H01S5/02 ,  H01S5/20 ,  H01S5/042 ,  H01S5/42 ,  H01S5/024

摘要： A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

公开(公告)号：US11411375B2

公开(公告)日：2022-08-09

申请号：US16637698

申请日：2018-08-21

申请人： OSRAM OLED GmbH

发明人： Alfred Lell ,  Muhammad Ali ,  Bernhard Stojetz ,  Harald Koenig

IPC分类号： H01S5/40 ,  H01S5/024 ,  H01S5/042 ,  H01S5/323 ,  H01S5/0234 ,  H01S5/22

摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

公开(公告)号：US20220209498A1

公开(公告)日：2022-06-30

申请号：US17138829

申请日：2020-12-30

申请人： TRANSWAVE PHOTONICS, LLC.

发明人： Seungyong JUNG ,  Mikhail A. BELKIN

IPC分类号： H01S5/024 ,  H01S5/34 ,  G02B6/12 ,  H01S5/0234 ,  H01S5/02 ,  H01S5/02355

摘要： Structures and methods for reducing the thermal resistance of quantum cascade laser (QCL) devices and QCL-based photonic integrated circuits (QCL-PIC) are provided. In various embodiments, the native substrate of QCL and QCL-PIC devices is replaced with a foreign substrate that has very high thermal conductivity, for example, using wafer bonding methods. In some examples, wafer bonding of processed, semi-processed, or unprocessed QCL and QCL-PIC epilayers or devices on their native substrate to a high-thermal-conductivity substrate is performed, followed by removal of the native substrate via selective etching, and performing additional device processing if necessary. Thereafter, in some embodiments, cleaving or dicing individual devices from the bonded wafers may be performed, for example, for mounting onto heat sinks.

公开(公告)号：US11316322B2

公开(公告)日：2022-04-26

申请号：US16802294

申请日：2020-02-26

申请人： Infineon Technologies AG

发明人： Maurizio Galvano ,  Gianmaria Furlan ,  Andrea Logiudice ,  Franco Mignoli

IPC分类号： H01S5/0239 ,  H01S5/02 ,  H01S5/026 ,  G01S7/481 ,  H01S5/042 ,  H01S5/0231 ,  G01S7/484 ,  H01S5/323 ,  H01S5/0234 ,  H01S5/02345

摘要： A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode.

公开(公告)号：US11239631B2

公开(公告)日：2022-02-01

申请号：US16584218

申请日：2019-09-26

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tymon Barwicz ,  Yves C. Martin ,  Jason S. Orcutt

IPC分类号： H01S5/02375 ,  H01S5/22 ,  H01S5/0234 ,  H01S5/02326 ,  H01S5/042 ,  H01S5/0237

摘要： A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

公开(公告)号：US20210391689A1

公开(公告)日：2021-12-16

申请号：US17286985

申请日：2019-11-05

申请人： Sony Semiconductor Solutions Corporation

发明人： Takahiro ARAKIDA

IPC分类号： H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  H01S5/0234

摘要： The light emitting device according to an embodiment of the present disclosure includes: a substrate; a semiconductor stacked body; a first electrically conductive layer; a second electrically conductive layer; and a through wiring line. The substrate has a first surface and a second surface that are opposed to each other. The semiconductor stacked body is provided on the first surface of the substrate. The semiconductor stacked body has a plurality of light emitting regions each of which allows a laser beam to be emitted. The first electrically conductive layer is provided on a front surface of the semiconductor stacked body. The front surface is opposite to the substrate. The second electrically conductive layer is provided on the second surface of the substrate. The second electrically conductive layer is provided to allow a predetermined voltage to be applied to the semiconductor stacked body in each of a plurality of the light emitting regions. The through wiring line electrically couples the first electrically conductive layer and the second electrically conductive layer.