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    METHOD FOR MONITORING AN OPTICAL SIGNAL EXTRACTED FROM AN OPTICAL CAVITY
    1.
    发明申请
    METHOD FOR MONITORING AN OPTICAL SIGNAL EXTRACTED FROM AN OPTICAL CAVITY 有权

    公开(公告)号：US20250070534A1

    公开(公告)日：2025-02-27

    申请号：US18723604

    申请日：2022-12-21

    Applicant: Institute of Science and Technology - Austria

    Inventor： Fritz DIORICO ,  Onur HOSTEN

    IPC: H01S5/0683 ,  G01J1/42 ,  H01S5/06

    Abstract: A method for monitoring an optical signal (15) extracted from an optical cavity (42), such as a laser cavity (22), comprising the steps: receiving at least a portion of the optical signal (15) as an incident signal (1); converting the incident signal (1) into an error signal (9) by applying a conversion configuration including: propagating the incident signal (1) onto a detector (2) and deriving the error signal (9) based on a geometric beam shape, in particular based on a beam shape ellipticity, for example as proportional to a beam shape ellipticity, of the propagated incident signal (1) on the detector (2); wherein the error signal (9) has a local minimum, in particular a global minimum (13), and a local maximum, in particular a global maximum (14), wherein the local minimum and the local maximum delimit an interval (59) of error signal (9) values, wherein the conversion configuration configures the interval (59) to comprise a zero-crossing (58) of the error signal (9) when the optical cavity (42) is in a target state.

    Semiconductor Laser
    2.
    发明申请
    Semiconductor Laser 有权

    公开(公告)号：US20250047069A1

    公开(公告)日：2025-02-06

    申请号：US18721848

    申请日：2021-12-20

    Applicant: Nippon Telegraph and Telephone Corporation

    Inventor： Takuro Fujii ,  Koji Takeda ,  Toru Segawa ,  Yoshiho Maeda ,  Shinji Matsuo

    IPC: H01S5/12 ,  H01S5/06

    Abstract: A semiconductor laser includes: a waveguide structure including, in order, a first semiconductor layer, an active layer, and a second semiconductor layer; a p-type semiconductor layer disposed in contact with one side surface of the active layer; an n-type semiconductor layer disposed in contact with the other side surface of the active layer; a waveguide layer optically coupled to the active layer in a waveguide direction; a first diffraction grating disposed on either one of a lower surface of the first semiconductor layer, an upper surface of the second semiconductor layer, and a side surface of the active layer; a second diffraction grating disposed on either one of a lower surface and an upper surface of the waveguide layer; and a refractive index control unit for changing a refractive index of the waveguide layer. The semiconductor laser can achieve a good high-temperature operation with a simple configuration.

    LASER SYSTEM AND ELECTRONIC DEVICE MANUFACTURING METHOD
    4.
    发明公开
    LASER SYSTEM AND ELECTRONIC DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20240364076A1

    公开(公告)日：2024-10-31

    申请号：US18766837

    申请日：2024-07-09

    Applicant: Gigaphoton Inc.

    Inventor： Chen QU ,  Taisuke MIURA

    IPC: H01S5/06 ,  H01S5/065 ,  H01S5/50

    CPC classification number: H01S5/0611 ,  H01S5/0654 ,  H01S5/50

    Abstract: A laser system includes a first semiconductor laser device configured to output first CW laser light, a first semiconductor optical amplification device configured to amplify the first CW laser light and output second CW laser light, an optical parametric amplification device configured to amplify the second CW laser light and output first pulse laser light, and a wavelength conversion device configured to perform wavelength conversion on the first pulse laser light and output second pulse laser light in a deep ultraviolet wavelength region.

    LIGHT EMITTING DEVICE, RANGING DEVICE, AND MOVABLE OBJECT
    6.
    发明公开
    LIGHT EMITTING DEVICE, RANGING DEVICE, AND MOVABLE OBJECT 审中-公开

    公开(公告)号：US20240332913A1

    公开(公告)日：2024-10-03

    申请号：US18611470

    申请日：2024-03-20

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： TAKAKO SUGA ,  TAKESHI UCHIDA

    IPC: H01S5/42 ,  G01S7/484 ,  G01S17/10 ,  G01S17/931 ,  H01S5/04 ,  H01S5/06 ,  H01S5/343

    CPC classification number: H01S5/426 ,  G01S7/484 ,  G01S17/10 ,  G01S17/931 ,  H01S5/041 ,  H01S5/0601 ,  H01S5/34313 ,  H01S5/34373

    Abstract: A light emitting device includes: a first semiconductor light emitting element that includes a first active layer and a first resonator portion over a semiconductor substrate, and emits a first light; a second semiconductor light emitting element that includes a first reflector, a second resonator portion including a second active layer excited by the first light, and a second reflector stacked in this order over the first semiconductor light emitting element, and emits a second light, wherein an oscillation wavelength of the second semiconductor light emitting element is longer than that of the first semiconductor light emitting element, wherein the second semiconductor light emitting element includes a saturable absorption layer between the second resonator portion and the second reflector, and wherein a thickness L and an absorption coefficient α of the second active layer satisfy the following inequality.







    3.45
    ≤

    α
    ×
    L

    ≤
    15

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