公开(公告)号：US12237647B2

公开(公告)日：2025-02-25

申请号：US17718393

申请日：2022-04-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen Yu Chen ,  Ming Chyi Liu ,  Jhih-Bin Chen

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/028 ,  H01S5/187 ,  H01S5/20

Abstract: Some embodiments relate to a method for forming a vertical cavity surface emitting laser (VCSEL) structure. The method includes forming an optically active layer over a lower reflective layer and forming an upper reflector over the optically active layer. A first spacer is formed along sidewalls of the upper reflector. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer. A first etch process is performed on the lower reflective layer and the oxidized peripheral region, thereby forming a lower reflector and an optically active region.

公开(公告)号：US20250047075A1

公开(公告)日：2025-02-06

申请号：US18416740

申请日：2024-01-18

Applicant: The Regents of the University of Michigan

Inventor： Yong-Ho RA ,  Roksana Tonny RASHID ,  Xianhe LIU ,  Zetian MI

IPC: H01S5/34 ,  H01S5/11 ,  H01S5/183 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.

公开(公告)号：US12216755B2

公开(公告)日：2025-02-04

申请号：US16630431

申请日：2018-07-11

Applicant: Ramona Optics Inc.

Inventor： Roarke Horstmeyer ,  Robert Horstmeyer ,  Mark Harfouche ,  Ron Appel

IPC: G06F21/44 ,  G02B21/06 ,  G02B21/36 ,  G06V20/80 ,  H01S5/183

Abstract: A system and method to verify the authenticity of a physical object, based on the efficient acquisition and digital post-processing of a large amount of optical data. An optical system, comprised of an array of microscope-type “micro-cameras” and a patterned illumination source, acquires spatial, spectral and angular information about the physical object in the form of micro-camera images. The set of all acquired images comprise one object dataset, which a post-processing system then digitally transforms into a multi-gigabyte set of semi-random keys. Authentication takes place at a later date following a challenge-and-response protocol. The high resolution ( 1 Gigabyte) of the key set similarly prevents both physical and digital forgery attempts.

公开(公告)号：US12216271B2

公开(公告)日：2025-02-04

申请号：US17456427

申请日：2021-11-24

Applicant: Soh Okumura

Inventor： Soh Okumura

IPC: G02B26/08 ,  G01S17/34 ,  H01S5/02315 ,  H01S5/183

Abstract: An optical device includes: a first reflector; a second reflector facing the reflector; a light emitter between the first reflector and the second reflector; a base supporting the second reflector with space between the light emitter and the second reflector; a piezoelectric body configured to, in response to application of drive voltage, deform to cause the second region to deform to drive the second reflector so as to change a distance between the first reflector and the second reflector. The base has a first region and a second region having a lower stiffness than the first region. The second region has the second reflector and the piezoelectric body thereon. The optical device is configured to emit a laser beam whose wavelength is changeable with the distance between the first reflector and the second reflector.

公开(公告)号：US12206222B2

公开(公告)日：2025-01-21

申请号：US17407016

申请日：2021-08-19

Applicant: Apple Inc.

Inventor： Jeffrey T. Hill ,  Alfredo Bismuto ,  Tomas Sarmiento

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/12 ,  H01S5/185 ,  H01S5/187 ,  H01S5/42 ,  H01S5/028 ,  H01S5/183

Abstract: Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging.

公开(公告)号：US12199403B2

公开(公告)日：2025-01-14

申请号：US17492758

申请日：2021-10-04

Applicant: LITE-ON TECHNOLOGY CORPORATION

Inventor： Hsin-Wei Tsai ,  Shu-Hua Yang

IPC: H01S5/02208 ,  H01S5/00 ,  H01S5/02218 ,  H01S5/02257 ,  H01S5/183

Abstract: An electronic device is provided. The electronic device includes a substrate, a semiconductor unit, a wall, and a light-transmitting member. The semiconductor unit is mounted on the substrate. The wall is disposed on the substrate and surrounds the semiconductor unit. The wall includes two exterior wall components and two interior wall components. The two exterior wall components are spaced apart from each other, so that two gaps are formed between the two exterior wall components. The two gaps are in spatial communication with an installation area that is surrounded by the two exterior wall components. The two interior wall components are arranged in the installation area and spaced apart from each other. The two interior wall components correspond in position to the two gaps and respectively shade parts of the two gaps. The light-transmitting member is disposed on the wall and covered on the semiconductor unit.

公开(公告)号：US12196862B2

公开(公告)日：2025-01-14

申请号：US17875121

申请日：2022-07-27

Applicant: SHENZHEN GOODIX TECHNOLOGY CO., LTD.

Inventor： Hua Chen

IPC: G01S17/89 ,  G01N21/47 ,  G02B27/30 ,  H01S5/183 ,  G05D1/00

Abstract: A transmission apparatus for laser radar, which includes: a light source including a light emitting array composed of M*N light emitting unit(s) configured for transmitting M*N beam(s) of light, where each row of the light emitting units of the light emitting array are arranged along a first direction, each column of the light emitting units of the light emitting array are arranged along a second direction; a collimating mirror configured for collimating the M*N beam(s) of light; a diffusion sheet including a first field of view in the first direction configured for converting the M*N beam(s) of light into M*N beam(s) of linear light with a first divergence angle in the first direction, and projecting the linear light to a target object to form N linear light spots parallel to the first direction, and the first field of view being equal to the first divergence angle.

公开(公告)号：US12191635B2

公开(公告)日：2025-01-07

申请号：US17249622

申请日：2021-03-08

Applicant: Lumentum Operations LLC

Inventor： Richard F. Carson ,  Nein-Yi Li ,  Mial E. Warren

IPC: H01S5/42 ,  H01S5/0237 ,  H01S5/024 ,  H01S5/042 ,  H01S5/183

Abstract: A VCSEL/VECSEL array design is disclosed that results in arrays that can be directly soldered to a PCB using conventional surface-mount assembly and soldering techniques for mass production. The completed VCSEL array does not need a separate package and no precision sub-mount and flip-chip bonding processes are required. The design allows for on-wafer probing of the completed arrays prior to singulation of the die from the wafer. Embodiments relate to semiconductor devices, and more particularly to multibeam arrays of semiconductor lasers for high power and high frequency applications and methods of making and using the same.

公开(公告)号：US20250007236A1

公开(公告)日：2025-01-02

申请号：US18705357

申请日：2022-10-17

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： MASAYA NAGATA ,  HIROSHI ISOBE

IPC: H01S5/02 ,  H01S5/0233 ,  H01S5/0237 ,  H01S5/042 ,  H01S5/183

Abstract: To prevent peeling of a bonding portion between a first substrate having a light emitting element and a second substrate such as an LDD substrate. A light emitting device includes: a first substrate having a light emitting element; and a second substrate bonded to a surface side opposite to a light emitting surface of the light emitting element, in which the first substrate includes: a first conductive layer laminated on the opposite surface side of the light emitting element; a second conductive layer that is laminated on the first conductive layer and reflects light emitted from the light emitting element to the opposite surface side; a third conductive layer laminated on the second conductive layer and bonded to the second substrate via a bonding member; and an insulating layer laminated on the third conductive layer so as to cover at least end portions of the second conductive layer and the third conductive layer laminated.

公开(公告)号：US20240429682A1

公开(公告)日：2024-12-26

申请号：US18527172

申请日：2023-12-01

Applicant: Shenzhen Berxel Photonics Co., Ltd.

Inventor： Jiaxing Wang ,  Jianqiang Chen

IPC: H01S5/183 ,  H01S5/026

Abstract: The present disclosure provides a high-speed vertical cavity surface emitting laser, an optoelectronic device with the same, and a manufacturing method thereof. The high-speed vertical cavity surface emitting laser includes a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxide-confined layer, a second reflector layer and a second electrode layer, wherein the first electrode layer is an N-type electrode layer and the second electrode layer is a P-type electrode layer. The oxidation aperture in the oxide-confined layer is drop-shaped.