利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2600 条记录 (耗时 0.021 秒)

    Noise detecting circuit and associated system and method
    1.
    发明授权
    Noise detecting circuit and associated system and method 有权

    公开(公告)号：US12132456B2

    公开(公告)日：2024-10-29

    申请号：US18357989

    申请日：2023-07-24

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Bei-Shing Lien ,  Jaw-Juinn Horng

    IPC分类号： H03F3/21 ,  H03F3/193 ,  H03F3/45

    CPC分类号： H03F3/45179 ,  H03F3/193 ,  H03F3/211 ,  H03F3/45475 ,  H03F2200/171 ,  H03F2200/372

    摘要： A noise detecting circuit including an amplifier circuit amplifying an input signal indicating a noise level of a circuit to be detected and output an amplified signal; a filtering circuit receiving and filtering the amplified signal and output a filtered signal; and a comparing circuit receiving and compare the filtered signal to a reference voltage and output an output signal; wherein the filtering circuit includes: an output terminal; and a first filter selectively coupled to the output terminal, including: a sub-output terminal; a switch selectively coupling the sub-output terminal to the output terminal; a resistor, wherein a terminal of the resistor is coupled to the amplifier circuit and another terminal of the resistor is coupled to the sub-output terminal; and a capacitor, wherein a terminal of the capacitor is coupled to the sub-output terminal and another terminal of the capacitor is coupled to a reference voltage source.

    Variable gain amplifier circuit and semiconductor integrated circuit
    2.
    发明授权
    Variable gain amplifier circuit and semiconductor integrated circuit 有权

    公开(公告)号：US12119792B2

    公开(公告)日：2024-10-15

    申请号：US17522525

    申请日：2021-11-09

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Hiroshi Uemura ,  Keiji Tanaka

    IPC分类号： H03F3/45 ,  H03F1/32 ,  H03F3/193 ,  H03F3/72 ,  H03G1/00

    CPC分类号： H03F1/3211 ,  H03F3/193 ,  H03F3/72 ,  H03G1/0023

    摘要： A variable gain amplifier circuit includes first and second input terminals, first and second output terminals, first and second transistors respectively having bases electrically connected to the first and second input terminals and having collectors electrically connected to the first and second output terminals, and a degeneration circuit connected between emitters of the first and second transistors. The degeneration circuit has first and second MOS transistors each having two current terminals connected in series between the emitters of the first and second transistors, series resistor circuits, first and second current sources, two resistive elements connected between the first and second current sources and gates of the first and second MOS transistors, and two resistive elements connected between the first and second current sources and two nodes of the series resistor circuits.

    Radio frequency power amplifier
    4.
    发明授权
    Radio frequency power amplifier 有权

    公开(公告)号：US12021492B2

    公开(公告)日：2024-06-25

    申请号：US17303292

    申请日：2021-05-26

    申请人： InPlay, Inc.

    发明人： Ruifeng Liu ,  Russell Mohn

    IPC分类号： H03F3/217 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24

    CPC分类号： H03F3/245 ,  H03F1/565 ,  H03F3/193 ,  H03F3/2171 ,  H03F2200/171 ,  H03F2200/451

    摘要： A class-D RF power amplifier (PA) architecture with duty cycle control has improved power efficiency while suppressing even-order harmonics. An inductor and capacitor (LC) low pass filter (LPF) can also be integrated on-chip to further suppress harmonics and provide impedance transformation between the PA and load. This eases the design for customers and reduce their bill of materials cost. The LPF can also match the PA to the load impedance to improve efficiency. The harmonic levels can also be controlled by adjusting the duty cycle of the PA output.

    Multi mode phased array element
    5.
    发明授权
    Multi mode phased array element 有权

    公开(公告)号：US12009564B2

    公开(公告)日：2024-06-11

    申请号：US17236435

    申请日：2021-04-21

    申请人： QUALCOMM INCORPORATED

    发明人： Muhammad Hassan

    IPC分类号： H03F3/72 ,  H01P1/18 ,  H03F3/193 ,  H03F3/50 ,  H03G3/30

    CPC分类号： H01P1/18 ,  H03F3/193 ,  H03F3/50 ,  H03G3/3042 ,  H03F2200/294 ,  H03F2200/541

    摘要： A phased array element includes a transmit portion having a plurality of amplifier paths, each amplifier path having a driver amplifier and a power amplifier, a first transformer coupled to the power amplifier of a first amplifier path of the plurality of amplifier paths and a second transformer coupled to the power amplifier of a second amplifier path of the plurality of amplifier paths, a secondary winding of each of the first transformer and the second transformer coupled together by a common transformer segment, a transmit phase shifter switchably coupled to the plurality of amplifier paths, a receive portion coupled to the second transformer, the receive portion having a receive path having a low noise amplifier (LNA), and a receive phase shifter coupled to the LNA.

    AMPLIFYING CIRCUIT
    7.
    发明公开
    AMPLIFYING CIRCUIT 审中-公开

    公开(公告)号：US20240186952A1

    公开(公告)日：2024-06-06

    申请号：US18081625

    申请日：2022-12-14

    申请人： RichWave Technology Corp.

    发明人： Chih-Sheng Chen ,  Yu-Hsuan Chao

    IPC分类号： H03F1/02 ,  H03F3/193

    CPC分类号： H03F1/0205 ,  H03F3/193 ,  H03F2200/451

    摘要： An amplifying circuit includes a first transistor, a second transistor, and a switching circuit. A control terminal of the first transistor is coupled to an input terminal of the amplifying circuit, and a first terminal of the first transistor is coupled to a first reference end. The input terminal of the amplifying circuit receives a first radio frequency (RF) signal. A first terminal of the second transistor is coupled to a second terminal of the first transistor, and a second terminal of the second transistor is coupled to an output terminal of the amplifying circuit. The output terminal of the amplifying circuit outputs an amplified signal. The first transistor amplifies the first RF signal to generate a second RF signal. The switching circuit performs a switching operation to transmit the second RF signal to one of the first terminal and the control terminal of the second transistor.

    High frequency semiconductor amplifier
    10.
    发明授权
    High frequency semiconductor amplifier 有权

    公开(公告)号：US11979117B2

    公开(公告)日：2024-05-07

    申请号：US17296747

    申请日：2019-03-25

    申请人： Mitsubishi Electric Corporation

    发明人： Yoshinobu Sasaki

    IPC分类号： H03F3/191 ,  H01L27/06 ,  H03F1/26 ,  H03F1/56 ,  H03F3/193 ,  H03F3/60

    CPC分类号： H03F3/193 ,  H01L27/06 ,  H03F1/26 ,  H03F1/565 ,  H03F3/60

    摘要： A high frequency semiconductor amplifier according to the present disclosure includes: a transistor formed on a semiconductor substrate and including a gate electrode, a source electrode, and a drain electrode; a matching circuit for input-side fundamental wave matching of the transistor; a first inductor formed on the semiconductor substrate and having one end connected to the gate electrode of the transistor and the other end connected to the matching circuit; a capacitor formed on the semiconductor substrate and having one end being short-circuited; and a second inductor formed on the semiconductor substrate and having one end connected to the gate electrode of the transistor and the other end connected to the other end of the capacitor, wherein the second inductor resonates in series with the capacitor at second harmonic frequency, has a mutual inductance of subtractive polarity with the first inductor, and the first inductor and the second inductor form mutual inductive circuits for input-side second harmonic matching.