公开(公告)号：US10897192B1

公开(公告)日：2021-01-19

申请号：US16671318

申请日：2019-11-01

申请人： STMicroelectronics International N.V.

发明人： Akshat Jain ,  Saurabh Sona

IPC分类号： H02M1/10 ,  H02M1/36 ,  H03K17/615 ,  H02M1/00

摘要： A Darlington switch in series with a biasing circuit is biased in an ON state by default to generate a supply voltage for a controller integrated circuit chip during start-up. On powering up, the supply voltage for the controller integrated circuit chip rises. When the supply voltage exceeds a minimum operating voltage threshold, the controller integrated circuit chip is enabled for operation and an auxiliary supply circuit begins generating the supply voltage for the controller integrated circuit chip. The Darlington switch is turned OFF when the supply voltage being generated by the auxiliary circuit is sufficiently higher than a threshold associated with the minimum operating voltage threshold. The circuit for controlling ON/OFF state of the Darlington switch has a substantially lower static power dissipation than the biasing circuit.

公开(公告)号：US6034517A

公开(公告)日：2000-03-07

申请号：US179534

申请日：1998-10-27

申请人： Jeffrey Schenkel

发明人： Jeffrey Schenkel

IPC分类号： H02M3/155 ,  H03K17/615 ,  G05F1/40 ,  H02J1/00

CPC分类号： H03K17/615 ,  H02M3/155

摘要： The present invention relates to circuits and methods for improving the efficiency of step down switching regulators converting a high input voltage to a low output voltage. Furthermore, the present invention relates to circuits and methods to achieve such efficiency improvements while maintaining controllability during light output load conditions. In a preferred embodiment, the current mode switching regulator circuit includes a logic section, an output switch section controlled by the logic section, an oscillator for providing periodic timing signals to the logic section to turn the output switch ON, a feedback amplifier for developing an integrated error signal based on the output voltage, and a current comparator including an output, the current comparator for comparing the integrated error signal to the instantaneous value of the current in the output switch, the output of the comparator producing a signal which causes the logic section to turn the output switch OFF. Additionally, the output switch section is capable of delivering relatively faster voltage transitions under higher load conditions to minimize AC switching losses, and delivering relatively slower voltage transitions under lower load conditions to maintain controllability. A comparator circuit monitors load conditions via the current mode setpoint to determine proper output switch section operating mode.

摘要翻译： 本发明涉及用于提高降压开关稳压器将高输入电压转换为低输出电压的效率的电路和方法。 此外，本发明涉及在光输出负载条件下保持可控性的同时实现这种效率改进的电路和方法。 在优选实施例中，电流模式切换调节器电路包括逻辑部分，由逻辑部分控制的输出开关部分，用于向逻辑部分提供周期性定时信号以使输出开关接通的振荡器， 基于输出电压的积分误差信号和包括输出的电流比较器，用于将积分误差信号与输出开关中的电流的瞬时值进行比较的电流比较器，比较器的输出产生导致逻辑的信号 将输出开关关闭。 此外，输出开关部分能够在较高负载条件下提供相对较快的电压转换，以最小化交流开关损耗，并在较低负载条件下提供相对较慢的电压转换以保持可控制性。 比较器电路通过电流模式设定值来监视负载条件，以确定正确的输出开关部分工作模式。

公开(公告)号：US5684427A

公开(公告)日：1997-11-04

申请号：US588060

申请日：1996-01-19

申请人： Robert J. Stoddard ,  Daniel P. Orange, II ,  Roger C. Peppiette

发明人： Robert J. Stoddard ,  Daniel P. Orange, II ,  Roger C. Peppiette

IPC分类号： H03K17/06 ,  H03K17/615

CPC分类号： H03K17/06 ,  H03K17/615

摘要： A bipolar driver circuit includes a primary driver transistor and an independently controlled pre-driver transistor having an emitter connected to the base of the primary driver transistor and a collector connected to the collector of the primary driver transistor. In one embodiment, the collector of the primary driver transistor is connected to the output terminal of the driver circuit for sinking current from a load and, in another embodiment, the emitter of the primary driver transistor is connected to the output terminal of the driver circuit for sourcing current to a load. A first current source is connected to the base of the primary driver transistor and a second current source is connected to the base of the pre-driver transistor. The current sources are commonly controllable by an input signal. Also provided is an inverse conduction prevention circuit for preventing the pre-driver transistor from diverting base current from the primary driver transistor in the sink driver embodiment.

摘要翻译： 双极驱动器电路包括主驱动器晶体管和独立控制的预驱动器晶体管，其具有连接到初级驱动晶体管的基极的发射极和连接到主驱动晶体管的集电极的集电极。 在一个实施例中，主驱动晶体管的集电极连接到用于从负载吸收电流的驱动电路的输出端，而在另一个实施例中，主驱动晶体管的发射极连接到驱动电路的输出端 用于将电流提取到负载。 第一电流源连接到主驱动晶体管的基极，第二电流源连接到预驱动晶体管的基极。 电流源通常由输入信号控制。 还提供了一种用于在宿驱动器实施例中防止预驱动晶体管转移基极电流从初级驱动晶体管的逆导通防止电路。

公开(公告)号：US5526214A

公开(公告)日：1996-06-11

申请号：US127609

申请日：1993-09-28

申请人： Ikunori Takata ,  Masanori Inoue

发明人： Ikunori Takata ,  Masanori Inoue

IPC分类号： H01L29/73 ,  H01L21/331 ,  H03K17/08 ,  H03K17/082 ,  H03K17/615 ,  H02H7/20 ,  H02H9/04

CPC分类号： H03K17/0826 ,  H03K17/615

摘要： The present invention is directed to effectively prevent "load short-circuit breakdown" of a power Darlington transistor. When a potential different between a base BX and emitter E at a final stage of a power Darlington transistor (20) is at a specified level of voltage determined by base-emitter forward voltage of a protective bipolar transistor (32), the protective bipolar transistor (32) turns on, and accordingly, base current I.sub.B at an initial stage of the power Darlington transistor (20) is bypassed to the emitter E at the final stage. Hence, excessive rising of collector current I.sub.C of the Darlington transistor (20) is suppressed, and "load short-circuit breakdown" is prevented. The potential difference does not depend upon the number of stages of the Darlington transistor nor temperature, and therefore, it is facilitated for Darlington transistors of various numbers of stages to design a short-circuit protective circuit to ensure a specified bypass operation in the whole range of working temperature.

摘要翻译： 本发明旨在有效地防止功率达林顿晶体管的“负载短路故障”。 当功率达林顿晶体管（20）的最后级的基极BX和发射极E之间的电位处于由保护双极晶体管（32）的基极 - 发射极正向电压确定的电压的指定电平时，保护双极晶体管 （32）导通，因此，在最终阶段，在功率达林顿晶体管（20）的初始阶段的基极电流IB被旁路到发射极E. 因此，抑制了达林顿晶体管（20）的集电极电流IC的过度上升，并且防止了“负载短路击穿”。 电位差不取决于达林顿晶体管的级数和温度，因此，为各种级数的达林顿晶体管设计短路保护电路，以便在整个范围内确保指定的旁路工作， 的工作温度。

公开(公告)号：US5218236A

公开(公告)日：1993-06-08

申请号：US772857

申请日：1991-10-08

申请人： Takashi Harada

发明人： Takashi Harada

IPC分类号： H03K17/00 ,  H03K17/615 ,  H03K19/00

CPC分类号： H03K19/001 ,  H03K17/615 ,  H03K2217/0036

摘要： An output circuit which is provided with an integrated circuit composed of a PNP transistor and an NPN transistor of which the base is connected to the collector of the PNP transistor, a voltage source for supplying an electric potential to the emitter of the PNP transistor and voltage dropping means provided outside the integrated circuit for making the electric potential supplied to the collector of the NPN transistor less than the electric potential of the voltage source. Thereby, an electric potential supplied to the NPN transistor can be decreased because a voltage drop is caused by an element provided outside the integrated circuit. Thus, power consumption in the NPN transistor can be decreased. Namely, power consumed in the integrated circuit can be reduced. Consequently, high packaging density of the integrated circuit can be achieved and provision of multiple channels in the integrated circuit can be realized.

公开(公告)号：US5103119A

公开(公告)日：1992-04-07

申请号：US594828

申请日：1990-10-09

申请人： Myung J. Choe

发明人： Myung J. Choe

IPC分类号： H03K19/088 ,  H03K17/00 ,  H03K17/0412 ,  H03K17/0414 ,  H03K17/567 ,  H03K17/615 ,  H03K19/00 ,  H03K19/013 ,  H03K19/0175 ,  H03K19/08

CPC分类号： H03K19/017518 ,  H03K17/04126 ,  H03K17/0414 ,  H03K17/615 ,  H03K19/001 ,  H03K19/0136 ,  H03K2217/0036

摘要： A TTL-level BiCMOS driver comprises a oversaturation preventing part for preventing oversaturation in following parts including two diodes connected to each supply voltage, an inverter connected to the diodes and including a PMOS transistor and a NMOS transistor of which drain is connected to an input terminal; an inverter part connected to the oversaturation preventing part including a transistor and a diode connected to the emitter of the transistor and a resistor connected to the drain thereof and an inverter; and a switching part including first and second switching parts, the first switching part having an inverter connected to the input terminal, a PMOS transistor connected to the inverter, darlington transistors and a NMOS transistor connected to the base of one of the switching part having a transistor turned on according to the driving of the transistor in the inverter part and a NMOS transistor connected to the input terminal and a base of the transistor in the second switching part. According to the present invention, the TTL-level BiCMOS driver can achieve the improvement of switching speed and the reduction of power consumption.

摘要翻译： TTL级BiCMOS驱动器包括一个过饱和防止部分，用于防止在连接到每个电源电压的两个二极管的后续部分中过饱和，连接到二极管并包括PMOS晶体管的反相器和NMOS晶体管，漏极连接到输入端子 ; 连接到包括晶体管的过饱和防止部分的反相器部分和连接到晶体管的发射极的二极管和连接到其漏极的电阻器和反相器; 以及包括第一和第二开关部分的开关部分，所述第一开关部分具有连接到所述输入端子的反相器，连接到所述反相器的PMOS晶体管，达林顿晶体管和连接到所述开关部件之一的基极的NMOS晶体管，所述NMOS晶体管具有 晶体管根据逆变器部分中的晶体管的驱动导通，以及连接到输入端的NMOS晶体管和第二开关部分中的晶体管的基极。 根据本发明，TTL电平BiCMOS驱动器可以实现开关速度的提高和功耗的降低。

公开(公告)号：US5045734A

公开(公告)日：1991-09-03

申请号：US535321

申请日：1990-06-08

申请人： Byron R. Mehl

发明人： Byron R. Mehl

IPC分类号： H03K17/042 ,  H03K17/567 ,  H03K17/615

CPC分类号： H03K17/04213 ,  H03K17/567 ,  H03K17/615

摘要： A power switch responsive to drive signals developed by a signal source includes driver and driven transistors connected in a Darlington configuration and a further transistor having a control electrode and first and second main current path electrodes wherein the first main current path electrode of the further transistor is coupled to first main current path electrodes of the driver and driven transistors, the second main current path electrode ofo the further transistor is coupled to a control electrode of one of the driver and driven transistors and the control electrode of the further transistor receives the drive signals. The power switch is maintained in a saturated state over a wide range of load current magnitudes.

摘要翻译： 响应于由信号源产生的驱动信号的电源开关包括以达林顿配置连接的驱动器和驱动晶体管，以及具有控制电极和第一和第二主电流通道电极的另一晶体管，其中，另一晶体管的第一主电流通道电极为 耦合到驱动器和驱动晶体管的第一主电流通路电极，另一个晶体管的第二主电流路径电极耦合到驱动器和驱动晶体管之一的控制电极，并且另一晶体管的控制电极接收驱动信号 。 功率开关在宽范围的负载电流幅度下保持在饱和状态。

公开(公告)号：US4727264A

公开(公告)日：1988-02-23

申请号：US749307

申请日：1985-06-27

申请人： Robert A. Neidorff

发明人： Robert A. Neidorff

IPC分类号： H03K17/0422 ,  H03K17/615 ,  H03K17/00

CPC分类号： H03K17/0422 ,  H03K17/615 ,  Y10T307/826

摘要： A power driver circuit which provides a low voltage drop thereacross when turned on, without being driven into hard saturation. Hard saturation of the circuit according to the present invention is prevented by additional circuit elements which allow the transistor output circuit to be turned on while diverting excess drive current away from the input transistor. As a result, the driver circuit can provide the low saturation voltage and avoid unnecessary saturation of the output transistor while maintaining high-speed switching operation. The circuit may be implemented by discrete components, by a single integrated circuit or part of a larger integrated circuit.

摘要翻译： 电源驱动器电路，当打开时提供低压降，而不会被驱动到硬饱和。 通过附加的电路元件来防止根据本发明的电路的硬饱和度，这允许晶体管输出电路导通，同时使过多的驱动电流远离输入晶体管。 结果，驱动电路可以提供低饱和电压，并且在保持高速开关操作的同时避免输出晶体管的不必要的饱和。 电路可以由分立元件，单个集成电路或较大集成电路的一部分来实现。

公开(公告)号：US4616144A

公开(公告)日：1986-10-07

申请号：US680659

申请日：1984-12-12

申请人： Makoto Hideshima ,  Wataru Takahashi ,  Kenichi Muramoto

发明人： Makoto Hideshima ,  Wataru Takahashi ,  Kenichi Muramoto

IPC分类号： H03K17/082 ,  H03K17/615 ,  H03K19/08

CPC分类号： H03K17/615 ,  H03K17/0826

摘要： A high withstand voltage Darlington transistor circuit is comprised of a Darlington transistor and a bypass circuit. This bypass circuit is comprised of a bypass transistor whose collector is connected to the base of an earlier stage transistor of the transistors which make up the Darlington transistor and whose emitter is connected to the base of a later stage transistor. The base of the bypass transistor is connected to the collector of the Darlington transistor via a diode and the resistor. When the collector-emitter voltage of the Darlington transistor crosses a specified value, the bypass transistor operates and a base current of the Darlington transistor is supplied to the base of the later stage transistor without being supplied to the earlier stage transistor. The result is that the current amplification ratio of the Darlington transistor is substantially decreased, and the withstand voltage is substantially increased.

摘要翻译： 高耐压达林顿晶体管电路由达林顿晶体管和旁路电路组成。 该旁路电路由旁路晶体管组成，其旁路晶体管的集电极连接到构成达林顿晶体管的晶体管的前级晶体管的基极，其发射极连接到后级晶体管的基极。 旁路晶体管的基极通过二极管和电阻连接到达林顿晶体管的集电极。 当达林顿晶体管的集电极 - 发射极电压超过规定值时，旁路晶体管工作，并且将达林顿晶体管的基极电流提供给后级晶体管的基极，而不会提供给前级晶体管。 结果是达林顿晶体管的电流放大率显着降低，并且耐电压显着增加。

公开(公告)号：US4539492A

公开(公告)日：1985-09-03

申请号：US464503

申请日：1983-01-27

申请人： Hartmut Michel ,  Lothar Gademann ,  Erich Jesse

发明人： Hartmut Michel ,  Lothar Gademann ,  Erich Jesse

IPC分类号： H03K17/04 ,  H03K17/0412 ,  H03K17/14 ,  H03K17/60 ,  H03K17/615 ,  H03K3/26 ,  H03K3/313

CPC分类号： H03K17/615 ,  H03K17/04126

摘要： A three-stage Darlington transistor circuit having a power transistor (T.sub.3), a driver transistor (T.sub.2) and an initial transistor (T.sub.1) is provided. The collectors of these three transistors are connected with one another, while the emitter of the driver transistor (T.sub.2) is connected to the base of the power transistor (T.sub.3), and the emitter of the initial transistor (T.sub.1) is connected to the base of the driver transistor (T.sub.2). Connected to the base of the driver transistor (T.sub.2) is a series circuit comprising a first resistor (R.sub.1), which is connected directly to this base, and a Zener diode (ZD), the anode of the Zener diode being connected with the resistor (R.sub.1); and a second resistor (R.sub.2); the second resistor (R.sub.2) is connected in parallel to the emitter-base path of the driver transistor (T.sub.2). Upon the attainment of a predetermined voltage at the cathode of the Zener diode (ZD), the driver transistor (T.sub.2) and the power transistor (T.sub.3) are switched ON. The temperature dependency of this switch-on voltage can be adjusted by varying the resistance ratio of these two resistors (R.sub.1, R.sub.2).

摘要翻译： PCT No.PCT / DE82 / 00045 Sec。 371日期1983年1月27日 102（e）日期1983年1月27日PCT提交1982年3月5日PCT公布。 出版物WO82 / 04509 日期为1982年12月23日。提供具有功率晶体管（T3），驱动晶体管（T2）和初始晶体管（T1）的三阶段达林顿晶体管电路。 这三个晶体管的集电极彼此连接，而驱动晶体管（T2）的发射极连接到功率晶体管（T3）的基极，并且初始晶体管（T1）的发射极连接到基极 的驱动晶体管（T2）。 连接到驱动晶体管（T2）的基极的是串联电路，其包括直接连接到该基极的第一电阻器（R1）和齐纳二极管（ZD），齐纳二极管的阳极与电阻器 （R1）; 和第二电阻器（R2）; 第二电阻器（R2）并联连接到驱动晶体管（T2）的发射极 - 基极路径。 当在齐纳二极管（ZD）的阴极达到预定电压时，驱动晶体管（T2）和功率晶体管（T3）导通。 可以通过改变这两个电阻（R1，R2）的电阻比来调节该接通电压的温度依赖性。