摘要:
An electronic memory block comprises phase change memory cells for memory storage and further phase change memory cells forming logic gates, to provide in-memory data processing.
摘要:
A high speed signal drive circuit includes a D-PHY drive signal generation module, a C-PHY drive signal generation module, a drive signal selection module and a multiplex drive module. An output terminal of the D-PHY drive signal generation module and an output terminal of the C-PHY drive signal generation module are both connected to an input terminal of the drive signal selection module. An output terminal of the drive signal selection module is connected to an input terminal of the multiplex drive module. The drive signal selection module controls control switches of the multiplex drive module to be on and off based on a D-PHY drive signal or a C-PHY drive signal, so that the multiplex drive module functions as a D-PHY drive circuit or a C-PHY drive circuit. Thus, dual functions of the D-PHY drive circuit and the C-PHY drive circuit can be realized.
摘要:
Embodiments include a logic gate system comprising a first micro-cantilever beam arranged in parallel to a second micro-cantilever beam in which a length of the first micro-cantilever beam is shorter than a length of the second micro-cantilever beam. The first micro-cantilever beam is adjacent to the second micro-cantilever beam and the first micro-cantilever beam is coupled to an input DC bias voltage source to the logic gate system. The second micro-cantilever beam is coupled to an input AC voltage signal that dynamically sets a logic operation of the logic gate system by at least changing an operating resonance frequency for one or more of the first micro-cantilever beam and the second micro-cantilever beam.
摘要:
Embodiments include a logic gate system comprising a first micro-cantilever beam arranged in parallel to a second micro-cantilever beam in which a length of the first micro-cantilever beam is shorter than a length of the second micro-cantilever beam. The first micro-cantilever beam is adjacent to the second micro-cantilever beam and the first micro-cantilever beam is coupled to an input DC bias voltage source to the logic gate system. The second micro-cantilever beam is coupled to an input AC voltage signal that dynamically sets a logic operation of the logic gate system by at least changing an operating resonance frequency for one or more of the first micro-cantilever beam and the second micro-cantilever beam.
摘要:
An electronic device includes a die stack having a plurality of die. The die stack includes a die parity path spanning the plurality of die and configured to alternatingly identify each die as a first type or a second type. The die stack further includes an inter-die signal path spanning the plurality of die and configured to propagate an inter-die signal through the plurality of die, wherein the inter-die signal path is configured to invert a logic state of the inter-die signal between each die. Each die of the plurality of die includes signal formatting logic configured to selectively invert a logic state of the inter-die signal before providing it to other circuitry of the die responsive to whether the die is designated as the first type or the second type.
摘要:
A mechanical resonator-based cascadable logic device includes which includes a resonator having a beam with a first fixed end, a second fixed end, and a length between the first and second fixed ends. A first electrode and a second electrode are aligned along a first side of the beam. A third electrode and a fourth electrode are aligned along a second side of the beam and opposite the first and second electrodes. A DC voltage source is coupled to one of the first and second fixed ends of the beam. At least one of the first, second, third, and fourth electrodes is coupled to a first AC voltage source so that a logic operation is performed by activating a second resonant mode of the resonator.
摘要:
A drive circuit includes plural drive transistors that drive plural load elements, and an operation limiting circuit. The operation limiting circuit is configured by a logic circuit combining AND elements and NOR elements. When plural control signals are input to the operation limiting circuit due to abnormal input, the plural drive transistors for which the control signals were input are switched OFF.
摘要:
A logic circuit includes first and second input, an output, an input acknowledgement node, an output acknowledgement node, a logic evaluation block, a pre-charging circuit, and a completion detection circuit. The logic evaluation block performs a logic evaluation of first and second input signals at the first and second inputs, and to output an output signal corresponding to the logic evaluation. The pre-charging circuit pre-charges the logic evaluation block in response to the first input signal and an acknowledgement signal at the input acknowledgement node. The completion detection circuit generates an acknowledgement signal at the output acknowledgement node in response to the second input signal and the output signal.
摘要:
A device that includes a memristive Akers logic array, wherein the memristive Akers logic array comprises multiple primitive logic cells that are coupled to each other; wherein each primitive logic cell comprises at least one memristive device.
摘要:
An integrated circuit is manufactured by a predetermined manufacturing process having a nominal minimum pitch of metal lines. The integrated circuit includes a plurality of metal lines extending along a first direction and a plurality of standard cells under the plurality of metal lines. The plurality of metal lines is separated, in a second direction perpendicular to the first direction, by integral multiples of the nominal minimum pitch. The plurality of standard cells includes a first standard cell configured to perform a predetermined function and having a first layout and a second standard cell configured to perform the predetermined function and having a second layout different than the first layout. The first and second standard cells have a cell height (H) along the second direction, and the cell height being a non-integral multiple of the nominal minimum pitch.