CONTROL OF BIAS CURRENT TO A LOAD

    公开(公告)号:US20220345119A1

    公开(公告)日:2022-10-27

    申请号:US17729844

    申请日:2022-04-26

    发明人: Harald Garvik

    IPC分类号: H03K3/353 H03K5/01

    摘要: A circuit portion comprises a load circuit portion and a bias circuit portion. The load circuit portion comprises a load transistor. The bias circuit portion comprises a replica transistor matched to the load transistor and connected to the load transistor at a node such that when a current flows through the replica transistor, a current proportional to the current through the replica transistor flows through the load transistor. The bias circuit portion also comprises a current input for receiving an input current, a supply voltage input for receiving a supply voltage, and a feedback loop arranged to: adjust a voltage at the node connecting the replica transistor and the load transistor such that the replica transistor conducts a current proportional to the input current, and counteract variations in the voltage at the node connecting the replica transistor and the load transistor arising from changes in the supply voltage.

    ULTRA-LOW ENERGY PER CYCLE OSCILLATOR TOPOLOGY

    公开(公告)号:US20220294426A1

    公开(公告)日:2022-09-15

    申请号:US17828161

    申请日:2022-05-31

    发明人: Manikandan R R

    摘要: In described examples of an integrated circuit (IC), an oscillator includes Schmitt trigger delay cells connected in a ring topology. The Schmitt trigger delay cells have a high input threshold approximately equal to Vdd and a low input threshold approximately equal to Vss to increase delay through each cell. An output buffer receives a phase signal from an output terminal of one of the Schmitt trigger delay cells and converts a transition phase signal to a faster transition clock signal. The output buffer has control circuitry that generates non-overlapping control signals in response to the phase signal, to control an output stage to generate the fast transition clock signal while preventing short circuit current in the output stage.

    CSAMT transmitter
    4.
    发明授权

    公开(公告)号:US11201606B2

    公开(公告)日:2021-12-14

    申请号:US16878643

    申请日:2020-05-20

    IPC分类号: H03K3/353

    摘要: The present invention discloses a CSAMT transmitter, including: a first transmitter, where the first transmitter includes a first generator, a first rectifier module, a first transmission module, and a second transmission module, the first generator is connected to the first transmission module and the second transmission module by using the first rectifier module; and a second transmitter, where the second transmitter includes a second generator, a second rectifier module, a third transmission module, and a fourth transmission module, the second generator is connected to the third transmission module and the fourth transmission module by using the second rectifier module, where the first transmission module is connected to the third transmission module, and the second transmission module is connected to the fourth transmission module; the first transmission module has the same voltage as the third transmission module, and the second transmission module has the same voltage as the fourth transmission module.

    CIRCUIT STRUCTURE
    5.
    发明申请

    公开(公告)号:US20210020629A1

    公开(公告)日:2021-01-21

    申请号:US16575407

    申请日:2019-09-19

    发明人: Chun-Sheng Chen

    摘要: A circuit structure including a first gate structure, a first multi-connected channel layer and a second transistor is provided. The first gate structure has a first extension direction, and the first gate structure has a first end and a second end opposite to each other. The first gate structure is fully surrounded by the first multi-connected channel layer, and a plane direction of the multi-connected channel layer is perpendicular to the first extension direction. The first gate structure and the first multi-connected channel layer form a first transistor. The second transistor is disposed in the first multi-connected channel layer. A second gate structure or a channel of the second transistor is electrical connected to the first multi-connected channel layer.

    ELECTRONIC DEVICE
    8.
    发明申请
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号:US20200162063A1

    公开(公告)日:2020-05-21

    申请号:US16748417

    申请日:2020-01-21

    申请人: SK hynix Inc.

    发明人: Jeong-Eun SONG

    IPC分类号: H03K5/12 H03K3/353

    摘要: Provided is an electronic device including a ramp signal generation circuit configured to generate a ramp signal having a second slope that is greater by a first level than a first slope which corresponds to an analog gain, and a slope correction circuit configured to correct the second slope of the ramp signal by the first level to obtain the first slope.