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公开(公告)号:US20240365021A1
公开(公告)日:2024-10-31
申请号:US18766024
申请日:2024-07-08
发明人: Shunpei YAMAZAKI , Takayuki IKEDA
IPC分类号: H04N25/75 , H01L27/146 , H04N25/79
CPC分类号: H04N25/75 , H01L27/14612 , H01L27/14636 , H04N25/79
摘要: An imaging device having a memory function is provided. Alternatively, an imaging device suitable for taking images of a moving object is provided. The imaging device includes first to third layers; the second layer is provided between the first and the third layer; the first layer includes a photoelectric conversion device; the second layer includes a first and a second circuit; the third layer includes a third and a fourth circuit; the first circuit and the photoelectric conversion device have a function of generating imaging data; the third circuit has a function of reading the imaging data; the second circuit has a function of storing the imaging data read by the third circuit; the fourth circuit has a function of reading the imaging data stored in the second circuit; and the first circuit and the second circuit include a transistor including a metal oxide in a channel formation region.
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公开(公告)号:US20240363658A1
公开(公告)日:2024-10-31
申请号:US18770566
申请日:2024-07-11
发明人: Chih-Yu TSENG , Ming-Hsien CHEN
IPC分类号: H01L27/146 , H04N25/53 , H04N25/709 , H04N25/71 , H04N25/711 , H04N25/75 , H04N25/771
CPC分类号: H01L27/14623 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H04N25/53 , H04N25/711 , H04N25/771 , H04N25/709 , H04N25/745 , H04N25/75
摘要: Disclosed is a CMOS image sensor with global shutters and a method for fabricating the CMOS image sensor. In one embodiment, a semiconductor device, includes: a light-sensing region; a charge-storage region; a light-shielding structure; and at least one via contact; wherein the charge-storage region is spatially configured adjacent to the light-sensing region in a lateral direction, wherein the light-shielding structure is configured over the charge-storage region in a vertical direction so as to prevent incident light leaking from the light-sensing region to the signal-processing region, wherein the light-shielding structure is configured in an interlayer dielectric (ILD) layer, and wherein the light-shielding structure is simultaneously formed with the at least one via contact.
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公开(公告)号:US12114090B2
公开(公告)日:2024-10-08
申请号:US17606251
申请日:2020-04-23
发明人: Liming Chen
IPC分类号: H04N25/771 , H04N25/75 , H04N25/778
CPC分类号: H04N25/771 , H04N25/75 , H04N25/778
摘要: An image sensor comprises an arrangement of pixels, the pixels including an acquisition circuit each, the acquisition circuit including: a sensor circuit configured to generate a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel; a storage circuit configured to store during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG); and a comparator circuit configured to generate after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE). A method of operating an image sensor comprises steps of generating a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel, storing during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG) and generating after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE).
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公开(公告)号:US12108018B2
公开(公告)日:2024-10-01
申请号:US17543631
申请日:2021-12-06
申请人: Ari M. Presler
发明人: Ari M. Presler
IPC分类号: H04N13/189 , G03B17/56 , H04N5/77 , H04N13/161 , H04N13/194 , H04N13/204 , H04N13/239 , H04N13/257 , H04N13/275 , H04N23/00 , H04N23/52 , H04N23/63 , H04N23/661 , H04N23/695 , H04N25/71 , H04N25/75 , H04N5/765 , H04N5/781 , H04N5/85 , H04N5/907 , H04N9/79 , H04N9/804
CPC分类号: H04N13/189 , G03B17/56 , H04N5/772 , H04N13/161 , H04N13/194 , H04N13/204 , H04N13/239 , H04N13/257 , H04N13/275 , H04N23/00 , H04N23/52 , H04N23/631 , H04N23/633 , H04N23/661 , H04N23/695 , H04N25/745 , H04N25/75 , H04N5/765 , H04N5/781 , H04N5/85 , H04N5/907 , H04N9/7921 , H04N9/804
摘要: A digital camera system includes an optical assembly to gather light from a desired scene, a modular imaging subsystem aligned with the optical assembly, and an image processing, recording and display subsystem.
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公开(公告)号:US20240323561A1
公开(公告)日:2024-09-26
申请号:US18546017
申请日:2022-02-02
发明人: Yohta Origuchi
摘要: An image processing device of an embodiment according to the present disclosure includes: an obtaining section (10B) that sequentially obtains images based on pixel signals respectively for a plurality of pixels which pixel signals are output from a pixel array section including the plurality of pixels; a setting section (10C) that assigns the same identification information to the plurality of images having the same imaging condition and assigns different pieces of identification information to the plurality of images having different imaging conditions; and an output section (10D) that outputs the plurality of images to which the identification information is assigned.
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公开(公告)号:US20240323555A1
公开(公告)日:2024-09-26
申请号:US18189662
申请日:2023-03-24
发明人: Kuo-Cheng LEE , Ping-Hao LIN , Yun-Wei CHENG , Bo-Ge HUANG
IPC分类号: H04N25/63 , H01L27/146 , H04N25/75
CPC分类号: H04N25/63 , H01L27/14623 , H04N25/75 , H04N25/131
摘要: An image sensor device may include a pixel sensor array and a black level correction (BLC) region. The BLC region may include a sensing region in a substrate and a light-blocking layer above the sensing region. An anti-reflection array may be formed in the light-blocking layer. The anti-reflection array includes holes, trenches, and/or other structural features such that the light-blocking layer includes two or more areas in which the top surface of the light-blocking layer is at different heights in the image sensor device. The different heights of the top surface of the light-blocking layer reduce the likelihood of light being reflected off of the light-blocking layer and toward the pixel sensor array. The anti-reflection array may reduce the likelihood of occurrence of flares or hot spots in images generated by the image sensor device, which may increase the image quality of the images generated by the image sensor device.
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公开(公告)号:US20240314465A1
公开(公告)日:2024-09-19
申请号:US18677949
申请日:2024-05-30
申请人: PixArt Imaging Inc.
发明人: TSO-SHENG TSAI
IPC分类号: H04N25/75 , H01L27/146 , H01L31/107 , H04N25/76
CPC分类号: H04N25/75 , H01L27/14612 , H01L27/14643 , H04N25/76 , H01L31/107
摘要: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode (SPAD) and a floating diffusion. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. The floating diffusion is used to record a voltage of one photon event detected by the SPAD in an exposure period.
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公开(公告)号:US20240313012A1
公开(公告)日:2024-09-19
申请号:US18671434
申请日:2024-05-22
IPC分类号: H01L27/146 , H04N23/50 , H04N23/55 , H04N25/57 , H04N25/585 , H04N25/75 , H04N25/76
CPC分类号: H01L27/14612 , H01L27/14609 , H01L27/14627 , H01L27/14643 , H04N25/57 , H04N25/585 , H04N25/75 , H04N25/76 , H04N23/50 , H04N23/55
摘要: An imaging device including a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; and a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion. The area of the second photoelectric converter is greater than the area of the first photoelectric converter in a plan view, and the number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than the number of saturation charges of a second imaging cell including the second photoelectric converter.
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公开(公告)号:US12096142B2
公开(公告)日:2024-09-17
申请号:US18300062
申请日:2023-04-13
发明人: Nanako Kato , Toshifumi Wakano , Yusuke Otake
IPC分类号: H04N25/60 , H01L27/146 , H04N25/75 , H04N25/77 , H04N25/778
CPC分类号: H04N25/60 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H04N25/77 , H04N25/778 , H04N25/75
摘要: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
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公开(公告)号:US12096140B2
公开(公告)日:2024-09-17
申请号:US17818962
申请日:2022-08-10
发明人: Denver Lloyd , Adi Xhakoni , Scott Johnson
IPC分类号: H04N25/59 , H01L27/146 , H04N25/531 , H04N25/583 , H04N25/585 , H04N25/62 , H04N25/75 , H04N25/778
CPC分类号: H04N25/59 , H01L27/14612 , H01L27/14643 , H04N25/531 , H04N25/583 , H04N25/585 , H04N25/62 , H04N25/75 , H04N25/778
摘要: In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.
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