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    Image sensors having dielectric relaxation correction circuitry
    4.
    发明授权
    Image sensors having dielectric relaxation correction circuitry 有权

    公开(公告)号：US11647304B2

    公开(公告)日：2023-05-09

    申请号：US17659290

    申请日：2022-04-14

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Denver Lloyd ,  Manuel H. Innocent

    IPC: H04N5/365 ,  H04N25/671 ,  H04N25/72 ,  H04N25/445

    CPC classification number: H04N25/671 ,  H04N25/445 ,  H04N25/72

    Abstract: Some image sensors include pixels with capacitors. The capacitor may be used to store charge in the imaging pixel before readout. The capacitor may be a metal-insulator-metal (MIM) capacitor that is susceptible to dielectric relaxation. Dielectric relaxation may cause lag in the signal on the capacitor that impacts the signal on the capacitor during sampling. The image sensor may include dielectric relaxation correction circuitry that leverages the linear relationship between voltage stress and lag signal to correct for dielectric relaxation. The image sensor may include shielded pixels that operate with a similar timing scheme as the imaging pixels in the active array. Measured lag signals from the shielded pixels may be used to correct imaging data.

    Semiconductor element, manufacturing method of semiconductor element, and electronic apparatus
    6.
    发明授权
    Semiconductor element, manufacturing method of semiconductor element, and electronic apparatus 有权

    公开(公告)号：US11610929B2

    公开(公告)日：2023-03-21

    申请号：US17175065

    申请日：2021-02-12

    Applicant: SONY CORPORATION

    Inventor： Naoto Sasaki

    IPC: H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L23/31 ,  H01L23/528 ,  H01L23/532 ,  H04N5/365 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/378 ,  H01L23/525

    Abstract: The present disclosure relates to a semiconductor element, a manufacturing method of a semiconductor element, and an electronic apparatus, which enable suppression of crack occurrences and leaks. The present technology has a laminated structure including an insulating film having a CTE value between those of metal and Si and disposed under a metal wiring, and P—SiO (1 μm) having good coverage and disposed as a via inner insulating film in a TSV side wall portion. As the insulating film having a CTE that is in the middle between those of metal and Si, for example, SiOC is used with a thickness of 0.1 μm and 2 μm respectively in the via inner insulating film and a field top insulating film continuous to the via inner insulating film. The present disclosure can be applied to, for example, a solid-state imaging element used in an imaging device.

    Multiple frame defect pixel detection and correction
    9.
    发明授权
    Multiple frame defect pixel detection and correction 有权

    公开(公告)号：US11509845B2

    公开(公告)日：2022-11-22

    申请号：US17193815

    申请日：2021-03-05

    Applicant: Black Sesame International Holding Limited

    Inventor： Jiaju Yue ,  Donghui Wu ,  Bin Chen ,  Chao Wang

    IPC: H04N5/367 ,  H04N5/365 ,  H04N5/57

    Abstract: A method of defect pixel correction, includes, receiving at least one center pixel signal in a plurality of frames, receiving a plurality of neighboring pixel signals adjacent the center pixel in the plurality of frames, determining a brightness of the center pixel signal, determining the brightness of the plurality of neighboring pixel signals, determining if the brightness of the center pixel signal exceeds a wounded pixel threshold of the plurality of neighboring pixel signals, determining a location of the center pixel having the brightness greater than the wounded pixel threshold in at least one frame, determining a number of reoccurrences of the center pixel having the brightness greater than the wounded pixel threshold, determining if the number of reoccurrences exceeds a defect pixel threshold and updating the at least one center pixel signal to a mean of the plurality of neighboring pixel signals.

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