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公开(公告)号：US12096642B2
公开(公告)日：2024-09-17
申请号：US17519340
申请日：2021-11-04
发明人： Atsushi Toda
IPC分类号： H01L27/30 , H01L27/14 , H01L27/146 , H04N5/374 , H04N25/13 , H04N25/17 , H04N25/70 , H04N25/702 , H04N25/76 , H10K19/20 , H10K39/32
CPC分类号： H10K39/32 , H01L27/14 , H01L27/146 , H01L27/14603 , H01L27/1461 , H01L27/14621 , H01L27/1464 , H01L27/14665 , H04N25/134 , H04N25/136 , H04N25/17 , H04N25/70 , H04N25/702 , H04N25/76 , H10K19/20 , H01L27/14647 , H04N25/13
摘要： The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.
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公开(公告)号：US20230352503A1
公开(公告)日：2023-11-02
申请号：US17731158
申请日：2022-04-27
发明人： Chun-Yuan WANG , An-Li KUO , Shin-Hong KUO , Zong-Ru TU , Yu-Chi CHANG , Han-Lin WU , Hung-Jen TSAI
IPC分类号： H01L27/146 , H04N5/374 , G06T7/13
CPC分类号： H01L27/14621 , H04N5/374 , H01L27/14645 , G06T7/13
摘要： An operating method of an under-display camera system includes: providing a raw data by a pixel array; generating, by a plurality of color filters respectively disposed on a plurality of first photodiodes of the pixel array, a color information in accordance with the raw data; generating, by a plurality of first narrowband filters respectively disposed on a plurality of second photodiodes of the pixel array, a first narrowband information in accordance with the raw data, wherein a spectrum linewidth of the plurality of first narrowband filters is in a range from 5 nm to 70 nm; reconstructing an edge information from the first narrowband information based on one of a plurality of diffraction patterns provided by a database unit of a point spread function; and obtaining an image by combining the edge information with the color information.
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公开(公告)号：US20230268360A9
公开(公告)日：2023-08-24
申请号：US17564882
申请日：2021-12-29
发明人： Shengxin ZHANG , Chen XU , Guanjing REN , Xiaoyong WANG , Jiaqing HOU
IPC分类号： H01L27/146 , H04N5/374
CPC分类号： H01L27/14621 , H04N5/374 , H01L27/1461
摘要： The present application provides a pixel structure, an image sensor, a device, an image processing method and a control method. The pixel structure includes a plurality of first pixels and a plurality of second pixels, where the first pixels adopt first photoelectric conversion elements arranged in an array and provided with high sensitivity, and the second pixels adopt second photoelectric conversion elements arranged in an array and provided with low sensitivity, to realize compatible recognition of high-brightness information and low-light information by the image sensor and improving the dynamic range; the first photoelectric conversion elements and the second photoelectric conversion elements adopt a design of independent output circuits to realize separate output of electrical signals without interfering with each other, which improves recognition reliability and signal utilization recognition; the overall performance of the image sensor can also be improved based on layout of the pixel structure of the present application.
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公开(公告)号：US11689832B2
公开(公告)日：2023-06-27
申请号：US17687772
申请日：2022-03-07
申请人： NIKON CORPORATION
发明人： Shiro Tsunai , Hironobu Murata
IPC分类号： H04N5/374 , H04N25/772 , H01L27/146 , H04N25/70 , H04N25/75 , H04N25/79 , H04N25/13 , H04N25/534 , H04N25/583 , H04N25/778
CPC分类号： H04N25/772 , H01L27/1464 , H01L27/14621 , H01L27/14634 , H01L27/14641 , H01L27/14645 , H04N25/134 , H04N25/534 , H04N25/583 , H04N25/70 , H04N25/75 , H04N25/778 , H04N25/79 , H01L27/14627
摘要： An imaging element includes: an imaging unit in which a plurality of pixel groups including a plurality of pixels that output pixel signals according to incident light are formed, and on which incident light corresponding to mutually different pieces of image information is incident; a control unit that controls, for each of the pixel groups, a period of accumulating in the plurality of pixels included in the pixel group; and a readout unit that is provided to each of the pixel groups, and reads out the pixel signals from the plurality of pixels included in the pixel group.
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公开(公告)号：US11683601B2
公开(公告)日：2023-06-20
申请号：US16933379
申请日：2020-07-20
申请人： SONY CORPORATION
发明人： Nanako Kato , Toshifumi Wakano , Yusuke Otake
IPC分类号： H04N5/357 , H04N5/374 , H01L27/146 , H04N5/378 , H04N25/60 , H04N25/77 , H04N25/778 , H04N25/75
CPC分类号： H04N25/60 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H04N25/77 , H04N25/778 , H04N25/75
摘要： Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
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公开(公告)号：US20230171514A1
公开(公告)日：2023-06-01
申请号：US17963289
申请日：2022-10-11
发明人： Hideo Kobayashi
IPC分类号： H04N5/343 , H01L27/146 , H04N5/374 , H04N5/369
CPC分类号： H04N5/343 , H01L27/14612 , H04N5/3698 , H04N5/3742
摘要： A photoelectric conversion apparatus included pixel circuits, signal lines, current sources, a switching circuit configured to switch a connection state among the plurality of signal lines and the plurality of current sources, and a control circuit configured to control the connection state of the switching circuit. The switching circuit can implement a first connection state in which a first signal line and a second signal line are insulated from each other, a first current source is electrically connected to the first signal line, and a second current source is electrically connected to the second signal line, and a second connection state in which at least the first current source is electrically connected to at least the second signal line. The control circuit selects the first and second connection states in first and second operation modes, respectively.
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公开(公告)号：US11656374B2
公开(公告)日：2023-05-23
申请号：US17502424
申请日：2021-10-15
发明人： Tadashi Maruno , Eiji Toda , Mao Nakajima , Teruo Takahashi , Takafumi Higuchi
IPC分类号： G01T1/24 , H04N5/374 , H04N5/3745 , H01L27/146 , G01J1/02 , H04N5/376 , H04N5/363 , H04N5/378 , G01T1/208
CPC分类号： G01T1/247 , H04N5/363 , H04N5/376 , H04N5/378 , H04N5/3742 , H04N5/37455 , H04N5/37457 , G01T1/208
摘要： A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.
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公开(公告)号：US11647301B2
公开(公告)日：2023-05-09
申请号：US16933379
申请日：2020-07-20
申请人： SONY CORPORATION
发明人： Nanako Kato , Toshifumi Wakano , Yusuke Otake
IPC分类号： H04N5/357 , H04N5/374 , H01L27/146 , H04N5/378 , H04N25/60 , H04N25/77 , H04N25/778 , H04N25/75
CPC分类号： H04N25/60 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H04N25/77 , H04N25/778 , H04N25/75
摘要： Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
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公开(公告)号：US11641529B2
公开(公告)日：2023-05-02
申请号：US17863279
申请日：2022-07-12
IPC分类号： H04N5/357 , H04N5/378 , H04N5/369 , H01L27/146 , H04N5/374 , H04N5/3745
摘要： The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.
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公开(公告)号：US11637141B2
公开(公告)日：2023-04-25
申请号：US17234614
申请日：2021-04-19
IPC分类号： H01L27/146 , H04N5/374 , H01L31/02
摘要： An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
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