公开(公告)号：US06852615B2

公开(公告)日：2005-02-08

申请号：US10457506

申请日：2003-06-09

申请人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Janna Ruth Duvall

发明人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Janna Ruth Duvall

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/417 ,  H01L29/45 ,  H10L21/338

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/41725 ,  Y10S438/975 ,  Y10S438/978

摘要： A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HEMTs using a novel two step resist process to fabricate the ohmic contacts are described. This novel two-step process consists of depositing a plurality of layers having compounds of Group III V elements on a substrate; patterning and depositing a first photoresist on one of the layers; etching recessed areas into this layer; depositing ohmic metals on the recessed areas; removing the first photoresist; patterning and depositing a second photoresist, smaller in profile than the first photoresist, on the layer; depositing more ohmic metal on the layer allowing for complete coverage of the recessed areas; removing the second photoresist, and annealing the semiconductor structure.

摘要翻译： 在使用诸如氮化镓的复合衬底的高电子迁移率晶体管（HEMT）中形成欧姆接触的工艺及相关产品。 描述了使用新颖的两步抗蚀剂工艺制造欧姆接触的改进的器件和用于制造对GaN / AlGaN HEMT的欧姆接触的工艺的改进。 这种新型的两步法包括在基片上沉积多层具有IIIV族元素化合物的层; 在其中一层上图案化和沉积第一光致抗蚀剂; 将凹陷区域蚀刻到该层中; 在凹陷区域沉积欧姆金属; 去除第一光致抗蚀剂; 在该层上图案化和沉积比第一光致抗蚀剂更小的第二光致抗蚀剂; 在该层上沉积更多的欧姆金属，允许完全覆盖凹陷区域; 去除第二光致抗蚀剂，并退火半导体结构。