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    CLEANING METHOD AND PLASMA PROCESSING APPARATUS
    2.
    发明公开
    CLEANING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20240274415A1

    公开(公告)日：2024-08-15

    申请号：US18641475

    申请日：2024-04-22

    申请人： Tokyo Electron Limited

    发明人： Masahiro YAMAZAKI

    IPC分类号： H01J37/32 ,  B08B5/00 ,  B08B7/00 ,  B08B9/08 ,  H01L21/67

    CPC分类号： H01J37/32862 ,  B08B5/00 ,  B08B9/08 ,  H01J37/3244 ,  H01L21/67069 ,  B08B7/0057 ,  H01J2237/335

    摘要： A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

    PARTICLE REMOVAL METHOD
    5.
    发明公开
    PARTICLE REMOVAL METHOD 审中-公开

    公开(公告)号：US20240085808A1

    公开(公告)日：2024-03-14

    申请号：US18513893

    申请日：2023-11-20

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chih-Yuan YAO ,  Yu-Yu CHEN ,  Hsiang-Lung TSOU

    IPC分类号： G03F7/00 ,  B08B5/00 ,  B08B6/00

    CPC分类号： G03F7/70741 ,  B08B5/00 ,  B08B6/00

    摘要： A particle removal method includes loading a particle attracting member with a coating layer into a processing chamber of a processing apparatus. The processing chamber is configured to perform a lithography exposure process on a semiconductor wafer. The method also includes fixing the particle attracting member on a reticle holder in the processing chamber in a cleaning cycle, attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer, and loading the particle attracting member with the coating layer and the attracted particles out of the processing chamber, after the cleaning cycle. The method also includes loading the semiconductor wafer into the processing chamber, and performing the lithography exposure process on the semiconductor wafer in the processing chamber using a reticle fixed on the reticle holder after the cleaning cycle.

    ODOR DETECTION DEVICE AND ODOR DETECTION METHOD
    8.
    发明公开
    ODOR DETECTION DEVICE AND ODOR DETECTION METHOD 审中-公开

    公开(公告)号：US20230324344A1

    公开(公告)日：2023-10-12

    申请号：US18335036

    申请日：2023-06-14

    申请人： TAIYO YUDEN CO., LTD.

    发明人： Junji OSHITA

    IPC分类号： G01N29/22 ,  G01N29/036 ,  B08B5/00

    CPC分类号： G01N29/222 ,  G01N29/036 ,  B08B5/00 ,  G01N29/022

    摘要： An odor detection device includes a sensor chamber housing a sensor element, the sensor chamber having a first inlet, a first outlet, a second inlet, and a second outlet, the first and second outlets being located opposite the first and second inlets with the sensor element interposed therebetween, respectively, a flow channel including a filter therein, the flow channel being connected to the second outlet and being connected to the second inlet, a first gas delivery unit causing inflow of a gas at the first inlet and outflow of the gas at the first outlet, and a second gas delivery unit causing outflow of the gas at the second outlet and inflow of the gas at the second inlet.

    Condition selectable backside gas
    10.
    发明授权
    Condition selectable backside gas 有权

    公开(公告)号：US11666952B2

    公开(公告)日：2023-06-06

    申请号：US16811282

    申请日：2020-03-06

    申请人： Applied Materials, Inc.

    发明人： Stephen D. Prouty ,  Martin Perez-Guzman ,  Sumanth Banda ,  Rajinder Dhindsa ,  Alvaro Garcia de Gorordo

    IPC分类号： B08B9/08 ,  H01L21/683 ,  B08B5/00 ,  H01L21/30

    CPC分类号： B08B9/08 ,  B08B5/00 ,  H01L21/30 ,  H01L21/6833 ,  B08B2209/08

    摘要： Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.