WAFER MANUFACTURING METHOD
    6.
    发明公开

    公开(公告)号:US20240326165A1

    公开(公告)日:2024-10-03

    申请号:US18735595

    申请日:2024-06-06

    申请人: DENSO CORPORATION

    IPC分类号: B23K26/082 B23K26/38

    CPC分类号: B23K26/082 B23K26/38

    摘要: A surface of one end side of an ingot in a height direction thereof is irradiated with a laser beam having a permeability to the ingot, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. A laser scanning irradiating the laser beam is performed for a plurality of times changing the irradiation position in a second direction while causing an irradiation position of the laser beam to move in a first direction. With a single laser scanning, a plurality of laser beams are irradiated in which irradiation positions are different in the first direction and the second direction.

    METHOD FOR CUTTING AN AMORPHOUS METAL ALLOY SAMPLE

    公开(公告)号:US20240308003A1

    公开(公告)日:2024-09-19

    申请号:US18575070

    申请日:2022-06-29

    摘要: A method for machining a sample of amorphous metal alloy using a femtosecond laser, including at least one step of irradiating the sample with a laser beam along a reference trajectory to ablate material from the sample, so as to obtain a sample machined and maintained in the amorphous state, in which, the laser beam is pulsed, and the duration of each pulse is less than 1000 femtoseconds, preferably less than 600 femtoseconds, and in which the amorphous metal alloy has a critical diameter less than 5 millimeters, and/or a difference between the crystallization temperature and the glass transition temperature less than 60° C., and/or a quotient of the difference between the crystallization temperature and the glass transition temperature and of the difference between the liquidus temperature and the temperature glass transition is less than 0.12.