Substrate processing apparatus
    1.
    发明授权

    公开(公告)号:US11541502B2

    公开(公告)日:2023-01-03

    申请号:US17041734

    申请日:2020-03-04

    申请人: EBARA CORPORATION

    摘要: A substrate processing apparatus includes a polishing section and a transport section. The polishing section has a first polishing unit, a second polishing unit, and a transport mechanism. The first polishing unit has a first polishing apparatus and a second polishing apparatus. The second polishing unit has a third polishing apparatus and a fourth polishing apparatus. Each of the first to fourth polishing apparatuses has a polishing table to which a polishing pad is mounted, a top ring, and auxiliary units that perform a process on the polishing pad during polishing. Around the polishing table, a pair of auxiliary unit mounting units for mounting the respective auxiliary units in a left-right switchable manner with respect to a straight line connecting a swing center of the top ring and a center of rotation of the polishing table is provided at respective positions symmetrical with respect to the straight line.

    CHEMICAL MECHANICAL POLISHING METHOD

    公开(公告)号:US20220219285A1

    公开(公告)日:2022-07-14

    申请号:US17711724

    申请日:2022-04-01

    摘要: A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

    Method and apparatus for monitoring chemical mechanical polishing process

    公开(公告)号:US11279001B2

    公开(公告)日:2022-03-22

    申请号:US16283554

    申请日:2019-02-22

    摘要: A method of monitoring a chemical mechanical polishing (CMP) apparatus including an arm configured to swing a polishing component includes performing a CMP process; learning at least two positions of the polishing component during a normal swing motion of the polish component by an optical acceptor and a processing unit to determine a plurality of expected positions of the polish component; analyzing at least one real position of the polishing component at predetermined time points during the CMP process by the optical acceptor and the processing unit; inspecting whether an abnormal event occurs based on the analyzed real position of the polishing component and the expected positions by the processing unit during the CMP process; and determining whether to send an alarm and stop the CMP process based on the inspecting result.

    SUBSTRATE PROCESSING APPARATUS
    5.
    发明申请

    公开(公告)号:US20210394332A1

    公开(公告)日:2021-12-23

    申请号:US17041734

    申请日:2020-03-04

    申请人: EBARA CORPORATION

    摘要: A substrate processing apparatus includes a polishing section and a transport section. The polishing section has a first polishing unit, a second polishing unit, and a transport mechanism. The first polishing unit has a first polishing apparatus and a second polishing apparatus. The second polishing unit has a third polishing apparatus and a fourth polishing apparatus. Each of the first to fourth polishing apparatuses has a polishing table to which a polishing pad is mounted, a top ring, and auxiliary units that perform a process on the polishing pad during polishing. Around the polishing table, a pair of auxiliary unit mounting units for mounting the respective auxiliary units in a left-right switchable manner with respect to a straight line connecting a swing center of the top ring and a center of rotation of the polishing table is provided at respective positions symmetrical with respect to the straight line.

    Method for dressing polishing pads

    公开(公告)号:US11148250B2

    公开(公告)日:2021-10-19

    申请号:US14994202

    申请日:2016-01-13

    申请人: Siltronic AG

    摘要: A method dresses one polishing cloth or two polishing pads simultaneously, in which a polishing cloth has been applied to a polishing plate, with at least one dresser (4), which is equipped with at least one dressing element (8), this at least one dressing element (8) being in contact with the at least one polishing cloth (11, 12) to be dressed, wherein the at least one polishing plate (21, 22) is rotated with a relative rotational speed and the at least one dresser (4) is rotated with a relative rotational speed and at least two different combinations of directions of rotation of the two pairs of polishing plates (21, 22) and pin wheels (31, 32) are executed during the simultaneous dressing of two polishing pads (11, 12) or during the dressing of one polishing cloth (11) of the polishing plate (21) and of the at least one dresser (4).

    Dressing method and dressing apparatus

    公开(公告)号:US10828746B2

    公开(公告)日:2020-11-10

    申请号:US15747488

    申请日:2016-08-09

    发明人: Kazuaki Bando

    摘要: A dressing apparatus 1 includes a regulating body 13 which has a ridge portion 12 with a surface having a shape corresponding to the shape of a grinding surface 6 of a grinding wheel 5, the surface being brought into face-to-face contact, over a required length, with the grinding surface 6 of the grinding wheel 5 which rotates; a jetting abrasive grain generating device 11 serving as a device for generating a pressure fluid with abrasive grains mixed therein; and a jetting port 15 for jetting abrasive grain-mixed compressed air, the jetting port 15 serving as a jetting device for jetting the mixed compressed air as a pressure fluid with the abrasive grains mixed therein from the jetting abrasive grain generating device 11 into a space between the grinding surface 6 and the surface of the ridge portion 12 of the regulating body 13 which are brought into face-to-face contact with each other.

    METHOD AND APPARATUS FOR MONITORING CHEMICAL MECHANICAL POLISHING PROCESS

    公开(公告)号:US20200269382A1

    公开(公告)日:2020-08-27

    申请号:US16283554

    申请日:2019-02-22

    摘要: A method of monitoring a chemical mechanical polishing (CMP) apparatus including an arm configured to swing a polishing component includes performing a CMP process; learning at least two positions of the polishing component during a normal swing motion of the polish component by an optical acceptor and a processing unit to determine a plurality of expected positions of the polish component; analyzing at least one real position of the polishing component at predetermined time points during the CMP process by the optical acceptor and the processing unit; inspecting whether an abnormal event occurs based on the analyzed real position of the polishing component and the expected positions by the processing unit during the CMP process; and determining whether to send an alarm and stop the CMP process based on the inspecting result.

    APPARATUS FOR CHANGING AN ABRASIVE SHEET IN AN ABRADING MACHINE

    公开(公告)号:US20200147754A1

    公开(公告)日:2020-05-14

    申请号:US16739961

    申请日:2020-01-10

    摘要: A system for replacing an abrasive sheet in a sanding machine including a working head in which it is provided a support body having an engagement surface arranged to engage with an abrasive sheet. The sanding machine also includes a handling device arranged to actuate the support body in space according to at least two degrees of freedom. The system may include a computing device to compute the spatial orientation of the support body. Furthermore, the system may include a removal station having a gripping element configured to grip the abrasive sheet in order to disengage the abrasive sheet from the support body.

    METHOD FOR DETERMINING POLISHING PAD HEIGHT AND POLISHING SYSTEM

    公开(公告)号:US20200061774A1

    公开(公告)日:2020-02-27

    申请号:US16542312

    申请日:2019-08-16

    申请人: EBARA CORPORATION

    IPC分类号: B24B53/00 B24B53/017

    摘要: Provided is a method for determining an accurate height of a polishing pad even when a dressing load applied to the polishing pad is changed. A method for determining a polishing pad height is provided. The method includes measuring a reference dresser height that is a height of a dressing surface (50a) of a dresser (50) when a polishing surface (22a) of a polishing pad (22) in an unused state is being pressed with a reference dressing load for polishing a substrate, calculating a correction amount for a dresser height corresponding to an amount of change in dressing load from the reference dressing load, measuring a current dresser height that is a current height of the dressing surface (50a) of the dresser (50) when the polishing surface (22a) of the polishing pad (22) is being pressed, and correcting the current dresser height using the correction amount.