SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER EPITAXIAL SILICON AT LOW SUBSTRATE TEMPERATURE

    公开(公告)号:US20240363374A1

    公开(公告)日:2024-10-31

    申请号:US18632376

    申请日:2024-04-11

    摘要: Disclosed herein are a processing chamber, a radical generation cartridge, and a method for etching amorphous silicon selectively relative to crystalline silicon. In one example, the selective silicon etching process is performed in an epitaxy processing chamber. In an example, a processing chamber is provided that includes a chamber body, a transparent dome, a susceptor, a heat source, and a first hot wire filament. The transparent dome is disposed on the chamber body and with the body, partially enclosing a processing volume. The susceptor is disposed in the processing volume. The heat source is positioned to direct radiant energy through the transparent dome toward the susceptor. The first hot wire filament is disposed in a first gas inlet formed through the chamber body. The first hot wire filament is configured to generate radicals from gas flowing through the first gas inlet into the processing volume of the processing chamber.