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    Organometallic compounds and thin film using same
    1.
    发明授权
    Organometallic compounds and thin film using same 有权

    公开(公告)号：US12195488B2

    公开(公告)日：2025-01-14

    申请号：US16968492

    申请日：2019-01-25

    Applicant: Merck Patent GmbH

    Inventor： Seung Won Ha ,  Young Hun Byun ,  Jeum Jong Kim ,  Ho Hoon Kim ,  Seong Hak Cheon

    IPC: C07F9/00 ,  H01L21/02

    Abstract: According to the organometallic compound of the present invention and the thin film manufactured using the same, requirements of high volatility and excellent chemical/thermal stability are satisfied, and significantly improved thin-film deposition rates are exhibited even at low temperatures. In addition, property degradation due to by-products can be improved, excellent step coverage can be realized, and a thin film which, due to having a high dielectric constant, electrically satisfies the equivalent oxide thickness (EOT) requirement while having a thickness at which tunneling does not physically occur can be implemented.

    Vanadium alkylidene complex, synthesis and use thereof
    2.
    发明授权
    Vanadium alkylidene complex, synthesis and use thereof 有权

    公开(公告)号：US12139504B2

    公开(公告)日：2024-11-12

    申请号：US18584272

    申请日：2024-02-22

    Applicant: Konstantin Bukhryakov ,  Dmitry Belov

    Inventor： Konstantin Bukhryakov ,  Dmitry Belov

    IPC: C07F9/00

    Abstract: The subject invention provides catalytical compounds/complexes, compositions comprising such compound/complex, synthesis of the compounds/complexes, and methods of using such compounds/complexes as catalysts in, for example, RCM reactions. Specifically, the subject invention provides the synthesis of the first catalytically active V oxo alkylidene, VO(CHSiMe3)(PEt3)2Cl, which exhibits superior performance compared to other analogs.

    Vanadium alkylidene complex, synthesis and use thereof
    3.
    发明授权
    Vanadium alkylidene complex, synthesis and use thereof 有权

    公开(公告)号：US11952395B1

    公开(公告)日：2024-04-09

    申请号：US18132135

    申请日：2023-04-07

    Applicant: Konstantin Bukhryakov ,  Dmitry Belov

    Inventor： Konstantin Bukhryakov ,  Dmitry Belov

    IPC: C07F9/00

    CPC classification number: C07F9/00

    Abstract: The subject invention provides catalytical compounds/complexes, compositions comprising such compound/complex, synthesis of the compounds/complexes, and methods of using such compounds/complexes as catalysts in, for example, RCM reactions. Specifically, the subject invention provides the synthesis of the first catalytically active V oxo alkylidene, VO(CHSiMe3)(PEt3)2Cl, which exhibits superior performance compared to other analogs.

    Method For Producing a Crystalline Film on a Substrate Surface
    4.
    发明公开
    Method For Producing a Crystalline Film on a Substrate Surface 审中-公开

    公开(公告)号：US20230279582A1

    公开(公告)日：2023-09-07

    申请号：US18129829

    申请日：2023-04-01

    Applicant: MATRIX SENSORS, INC.

    Inventor： David K Britt ,  Paul R Wilkinson ,  Steven Yamamoto

    IPC: C30B28/04 ,  C08J5/18 ,  C07F15/04 ,  G01G3/16 ,  C30B29/58 ,  C07F9/00

    CPC classification number: C30B28/04 ,  C08J5/18 ,  C07F15/04 ,  G01G3/165 ,  C30B29/58 ,  C07F9/00

    Abstract: An apparatus and method is provided for coating a surface of a material with a film of porous coordination polymer. A first substrate having a first surface to be coated is positioned in a processing chamber such that the first surface is placed in a substantially opposing relationship to a second surface. In some embodiments, the second surface is provided by a wall of the processing chamber, and in other embodiments the second surface is provided by a second substrate to be coated. The first substrate is held such that a gap exists between the first and second surfaces, and the gap is filled with at least one reaction mixture comprising reagents sufficient to form the crystalline film on at least the first surface. A thin gap (e.g., having a thickness less than 2 mm) between the first and second surfaces is effective for producing a high quality film having a thickness less than 100 μm. Confining the volume of the reaction mixture to a thin layer adjacent the substrate surface significantly reduces problems with sedimentation and concentration control. In some embodiments, the size, shape, or average thickness of the gap is adjusted during formation of the film in response to feedback from at least one film growth monitor.

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