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公开(公告)号：US20250034700A1
公开(公告)日：2025-01-30
申请号：US18785339
申请日：2024-07-26
Applicant: ENTEGRIS, INC.
Inventor： Carlo Waldfried , Surendra Maharjan , Stephen Longo
Abstract: Surface modified substrates and related methods are provided. A substrate having a modified surface comprises a first region and a second region. The first region is located above the second region. The first region comprises a nickel fluoride. The second region comprises a nickel alloy. A concentration of the nickel fluoride gradually decreases from the first region to the second region.
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公开(公告)号：US12209105B2
公开(公告)日：2025-01-28
申请号：US17901569
申请日：2022-09-01
Applicant: ENTEGRIS, INC.
Inventor： Philip S. H. Chen , Eric Condo , Bryan C. Hendrix , Thomas H. Baum , David Kuiper
IPC: C07F7/10 , C01B21/082 , C07F7/08 , C07F7/18 , C23C16/30 , C23C16/36 , C23C16/455 , H01L21/02
Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.
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公开(公告)号：US12185641B2
公开(公告)日：2024-12-31
申请号：US17875046
申请日：2022-07-27
Inventor： Vignesh Sundar , Yu-Jen Wang , Dongna Shen , Sahil Patel , Ru-Ying Tong
Abstract: A plasma enhanced chemical vapor deposition (PECVD) method is disclosed for forming a SiON encapsulation layer on a magnetic tunnel junction (MTJ) sidewall that minimizes attack on the MTJ sidewall during the PECVD or subsequent processes. The PECVD method provides a higher magnetoresistive ratio for the MTJ than conventional methods after a 400° C. anneal. In one embodiment, the SiON encapsulation layer is deposited using a N2O:silane flow rate ratio of at least 1:1 but less than 15:1. A N2O plasma treatment may be performed immediately following the PECVD to ensure there is no residual silane in the SiON encapsulation layer. In another embodiment, a first (lower) SiON sub-layer has a greater Si content than a second (upper) SiON sub-layer. A second encapsulation layer is formed on the SiON encapsulation layer so that the encapsulation layers completely fill the gaps between adjacent MTJs.
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4.发明授权
公开(公告)号：US12180583B2
公开(公告)日：2024-12-31
申请号：US18062274
申请日：2022-12-06
Inventor： Andrew Kummel , Cheng-Hsuan Kuo , SeongUk Yun , Ravindra Kanjolia , Mansour Moinpour , Daniel Moser
Abstract: A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.
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公开(公告)号：US20240410051A1
公开(公告)日：2024-12-12
申请号：US18698210
申请日：2023-01-12
Applicant: BOEHLERIT GmbH & Co.KG.
Inventor： Margarethe TRAXLER , Reinhard PITONAK , Ronald WEIßENBACHER
Abstract: A method for producing a coating on an object and a correspondingly produced coated body, in particular a cutting insert such as a cutting plate for machining processes. The coating with one or more coating layers is applied to the object. At least one Al1-xTixN coating layer is deposited using a CVD method, wherein nitrogen in the Al1-xTixN coating layer can be partially substituted. In order to obtain a coating layer with a highest possible proportion of cubic phases, the Al1-xTixN coating layer is deposited in the presence of a sulfur-containing gas.
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公开(公告)号：US20240400461A1
公开(公告)日：2024-12-05
申请号：US18802002
申请日：2024-08-13
Applicant: Applied Materials, Inc.
Inventor： Guodong Zhan , Xiaowei Wu , Xiao Ming He , Jennifer Y. Sun
IPC: C04B35/505 , C01F17/218 , C01F17/265 , C04B35/486 , C04B35/622 , C04B35/628 , C04B35/632 , C04B35/64 , C04B35/645 , C23C4/10 , C23C4/134 , C23C14/34 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/455
Abstract: Disclosed are methods of forming a chamber component for a process chamber. The methods may include filling a mold with nanoparticles or plasma spraying nanoparticles, where at least a portion of the nanoparticles include a core particle and a thin film coating over the core particle. The core particle and thin film are formed of, independently, a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride, or combinations thereof. The nanoparticles may have a donut-shape having a spherical form with indentations on opposite sides. The methods also may include sintering the nanoparticles to form the chamber component and materials. Further described are chamber components and coatings formed from the described nanoparticles.
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公开(公告)号：US20240392433A1
公开(公告)日：2024-11-28
申请号：US18704551
申请日：2022-12-15
Applicant: Versum Materials US, LLC
Inventor： Sergei V. Ivanov , Michael T. Savo , Jason P. Coyle
IPC: C23C16/30 , C23C16/44 , C23C16/455 , H01L21/3205
Abstract: The disclosed and claimed subject matter relates to (i) homoleptic precursors of the formula Bi(Ar)3 where Ar is one or more a bulky alkyl group selected from an iso-propyl group, a sec-butyl group, an iso-butyl group, a neo-pentyl group, a sec-pentyl group and an iso-pentyl group and (ii) the use thereof as precursors for deposition of metal-containing films.
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公开(公告)号：US12134805B2
公开(公告)日：2024-11-05
申请号：US17603843
申请日：2020-03-11
Applicant: SHOWA DENKO K.K.
Inventor： Isao Murase
Abstract: An aluminum alloy member forms a fluoride film thereon, which does not form a black dot-shaped bulged portion and, therefore, has excellent smoothness and excellent corrosion resistance against a corrosive gas, plasma, and others. An aluminum alloy member for forming a fluoride film thereon, consists of: Si: 0.01 mass % to 0.3 mass %; Mg: 0.5 mass % to 5.0 mass %; Fe: 0.05 mass % to 0.5 mass %; Cu: 0.5 mass % or less; Mn: 0.30 mass % or less; Cr: 0.30 mass % or less, and the balance being Al and inevitable impurities, wherein when an average major diameter of Fe-based crystallized products in the aluminum alloy member is “D” (μm), and an average crystalline particle diameter in the aluminum alloy member is “Y” (μm), a relational expression: Log10 Y
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公开(公告)号：US12110584B2
公开(公告)日：2024-10-08
申请号：US17361231
申请日：2021-06-28
Applicant: Applied Materials, Inc.
Inventor： Chandan Das , Susmit Singha Roy , Bhaskar Jyoti Bhuyan , John Sudijono , Abhijit Basu Mallick , Mark Saly
IPC: C23C16/30 , C23C16/04 , C23C16/06 , C23C16/448 , H01L21/02
CPC classification number: C23C16/305 , C23C16/04 , C23C16/06 , C23C16/4485 , H01L21/0228
Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.
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公开(公告)号：US12098107B2
公开(公告)日：2024-09-24
申请号：US18140372
申请日：2023-04-27
Applicant: Applied Materials, Inc.
Inventor： Guodong Zhan , Xiaowei Wu , Xiao Ming He , Jennifer Y. Sun
IPC: C04B35/505 , C01F17/218 , C01F17/265 , C04B35/486 , C04B35/622 , C04B35/628 , C04B35/632 , C04B35/64 , C04B35/645 , C23C4/10 , C23C4/134 , C23C14/34 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/455
CPC classification number: C04B35/505 , C01F17/218 , C01F17/265 , C04B35/486 , C04B35/62222 , C04B35/62813 , C04B35/62815 , C04B35/62823 , C04B35/62828 , C04B35/62884 , C04B35/62889 , C04B35/62897 , C04B35/6325 , C04B35/64 , C04B35/645 , C23C4/10 , C23C4/134 , C23C14/3414 , C23C16/30 , C23C16/405 , C23C16/4417 , C23C16/45525 , C23C16/45555 , C01P2004/64 , C01P2004/84 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3244 , C04B2235/441 , C04B2235/445 , C04B2235/52 , C04B2235/528 , C04B2235/5454 , C04B2235/666 , C04B2235/77 , C04B2235/96 , C04B2235/9607
Abstract: Disclosed are methods of forming a chamber component for a process chamber. The methods may include filling a mold with nanoparticles or plasma spraying nanoparticles, where at least a portion of the nanoparticles include a core particle and a thin film coating over the core particle. The core particle and thin film are formed of, independently, a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride, or combinations thereof. The nanoparticles may have a donut-shape having a spherical form with indentations on opposite sides. The methods also may include sintering the nanoparticles to form the chamber component and materials. Further described are chamber components and coatings formed from the described nanoparticles.
