公开(公告)号：US20240279837A1

公开(公告)日：2024-08-22

申请号：US17790381

申请日：2021-06-17

申请人： EBARA CORPORATION

发明人： Ryosuke HIWATASHI ,  Masashi SHIMOYAMA ,  Yasuyuki MASUDA

IPC分类号： C25D17/00 ,  C25D17/06 ,  C25D21/10

CPC分类号： C25D17/007 ,  C25D17/06 ,  C25D21/10

摘要： Provided is a resistor or the like that can improve uniformity of a plating film formed on a substrate. A resistor disposed between a substrate and an anode in a plating tank is provided. The resistor includes a first plurality of holes each formed on three or more reference circles being concentric and having different diameters and a second plurality of holes formed on an outer circumferential reference line surrounding the three or more reference circles, at least a part of the outer circumferential reference line being a trochoid curve.

公开(公告)号：US20240271313A1

公开(公告)日：2024-08-15

申请号：US18017613

申请日：2022-06-17

申请人： EBARA CORPORATION

发明人： Masaki TOMITA ,  Kentaro YAMAMOTO

IPC分类号： C25D21/08 ,  C25D17/02 ,  C25D17/06 ,  C25D21/12

CPC分类号： C25D21/08 ,  C25D17/02 ,  C25D17/06 ,  C25D21/12

摘要： Provided is a plating apparatus that allows cleaning a contact cleaning member.
The plating apparatus includes: a plating tank configured to house a plating solution; a substrate holder configured to hold a substrate with a surface to be plated facing downward, the substrate holder including a contact member for feeding power to the substrate; a contact cleaning member 482 for discharging a cleaning liquid to the contact member while the contact cleaning member is at a cleaning position between the plating tank and the substrate holder; a driving mechanism 476 configured to move the contact cleaning member 482 between the cleaning position and a retracted position retracted from between the plating tank and the substrate holder; and a nozzle cleaning cover 489 configured to cover an upper portion of the contact cleaning member 482 while the contact cleaning member 482 is at the retracted position.

公开(公告)号：US20240209539A1

公开(公告)日：2024-06-27

申请号：US17911044

申请日：2021-10-28

申请人： EBARA CORPORATION

发明人： Masaki TOMITA ,  Ryosuke HIWATASHI

IPC分类号： C25D17/06

CPC分类号： C25D17/06

摘要： An occurrence of a varied power feeding to a contact member is suppressed.
A substrate holder includes: a frame-shaped supporting mechanism configured to be suspended and held by a plurality of support pillars and to support an outer peripheral portion of a surface to be plated of a substrate; a back plate assembly configured to be arranged on a back surface side of the surface to be plated of the substrate and to sandwich the substrate with the supporting mechanism; a contact member 468 arranged on the supporting mechanism; and a plurality of power source line members 461. The contact member 468 has a power feeding contact point in contact with the outer peripheral portion of the surface to be plated of the substrate and a plurality of power source connecting portions 469b connected to a power source. The plurality of power source line members 461 are connected from the power source to the plurality of power source connecting portions 469b through the plurality of support pillars, and are routed such that distances from the power source to the plurality of power source connecting portions 469b become equal.

公开(公告)号：US20240183051A1

公开(公告)日：2024-06-06

申请号：US18436968

申请日：2024-02-08

申请人： ACM RESEARCH (SHANGHAI) INC.

发明人： Zhaowei Jia ,  Jian Wang ,  Hui Wang ,  Hongchao Yang

IPC分类号： C25D5/18 ,  C25D7/12 ,  C25D17/00 ,  C25D17/06 ,  C25D17/12 ,  C25D21/12 ,  H01L21/288 ,  H01L21/687 ,  H01L23/544

CPC分类号： C25D5/18 ,  C25D7/12 ,  C25D17/001 ,  C25D17/06 ,  C25D17/12 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/68764 ,  H01L23/544 ,  H01L2223/54493

摘要： An electroplating apparatus for electroplating on a front surface of a wafer, the electroplating apparatus includes a plurality of anodes, the plurality of anodes forming electric fields on the front surface of the wafer. An independent electric field is formed in a designated area. The intensity of the independent electric field is independently controlled. A total amount of power received within the designated area is adjusted so as to control a plating thickness at a specified location on the front surface of the wafer.

公开(公告)号：US20240175165A1

公开(公告)日：2024-05-30

申请号：US17792079

申请日：2021-10-28

申请人： EBARA CORPORATION

发明人： Masaki TOMITA ,  Yasuyuki MASUDA

IPC分类号： C25D17/00 ,  C25D17/06 ,  C25D21/04 ,  C25D21/12

CPC分类号： C25D17/002 ,  C25D17/06 ,  C25D21/04 ,  C25D21/12

摘要： Provided is a technique that can suppress deterioration of plating quality of a substrate due to gas bubbles that remain entirely on a lower surface of a membrane.
A plating apparatus 1000 includes a plating tank 10, a substrate holder 20, and a membrane module 40. The membrane module includes a first membrane 41 and a second membrane 42. The second membrane has an inflow port 42c for causing a plating solution in a first region R1 below the second membrane to flow into a second region R2 above the second membrane and below the first membrane, and an inclined portion 42b inclining relative to a horizontal direction and inclining so as to be positioned upward as heading from a center side of an anode chamber to an outer edge side of the anode chamber.

公开(公告)号：US20240060200A1

公开(公告)日：2024-02-22

申请号：US18498245

申请日：2023-10-31

申请人： Unison Industries, LLC

发明人： Ashwini Sameer Wadhavkar ,  Dattu Guru Venkata Jonnalagadda ,  Rajapriyan Rajendran ,  Gordon C. Tajiri ,  Udaya Bhaskar Pamidimarri

IPC分类号： C25D1/10 ,  C25D17/06 ,  C25D17/12

CPC分类号： C25D1/10 ,  C25D17/06 ,  C25D17/12

摘要： An electroforming system and method for electroforming a component that includes a first housing and a second housing, where the second housing can define a conformable electroforming reservoir with a base structure. An electrically insulating sheet covers at least a portion of the base structure and defines a fluid passage where the component is to be located.

公开(公告)号：US20230340688A1

公开(公告)日：2023-10-26

申请号：US18168486

申请日：2023-02-13

申请人： EBARA CORPORATION

发明人： Tsubasa ISHII ,  Masashi SHIMOYAMA ,  Masashi OBUCHI ,  Koichi MASUYA ,  Ryosuke HIWATASHI

IPC分类号： C25D21/12 ,  C25D17/02 ,  C25D17/06 ,  C25D17/10

CPC分类号： C25D21/12 ,  C25D17/02 ,  C25D17/06 ,  C25D17/10

摘要： An object is to precisely grasping, in real time, film thickness of a plated film during a plating process. A plating apparatus comprises: a plating tank for storing plating liquid; a substrate holder for holding a substrate; an anode arranged in the plating tank in such a manner that it faces the substrate held by the substrate holder; an electric potential sensor constructed in such a manner that it is arranged in a position close to the substrate held by the substrate holder, and measures electric potential of the plating liquid; and a state space model constructed to estimate current density of current flowing through an outer edge part of the substrate, based on a measured value of electric potential of the plating liquid obtained by the electric potential sensor and by using a state equation and an observation equation.

公开(公告)号：US20230193503A1

公开(公告)日：2023-06-22

申请号：US17998216

申请日：2021-05-03

申请人： SEMSYSCO GMBH

发明人： Andreas GLEISSNER ,  Franz MARKUT

IPC分类号： C25D21/10 ,  C25D17/06 ,  C25D17/00

CPC分类号： C25D21/10 ,  C25D17/06 ,  C25D17/001 ,  C25D17/007

摘要： The disclosure relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a rotatable substrate, an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate and a method for a chemical and/or electrolytic surface treatment of a substrate in a process fluid. The distribution system comprises a distribution body. The distribution body comprises a plurality of openings for the process fluid. The openings are arranged in a spiral-shaped pattern on a surface of the distribution body.

公开(公告)号：US11643744B2

公开(公告)日：2023-05-09

申请号：US17357406

申请日：2021-06-24

申请人： SPTS TECHNOLOGIES LIMITED

发明人： John MacNeil ,  Martin Ayres ,  Trevor Thomas

IPC分类号： C25D17/00 ,  C25D17/06 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01L21/288

CPC分类号： C25D17/001 ,  C25D17/004 ,  C25D17/06 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67178 ,  H01L21/67196 ,  H01L21/67766 ,  H01L21/67769 ,  H01L21/67778 ,  H01L21/68707 ,  H01L21/2885

摘要： A method of processing a semiconductor wafer is provided. The method includes introducing the wafer to a main chamber via a loading port, using a transfer mechanism to transfer the wafer to a first wafer processing module in a stack so that the wafer is disposed substantially horizontally in the first wafer processing module with a front face facing upwards, and performing a processing step on the front face of the wafer in the first wafer processing module.

公开(公告)号：US20230084072A1

公开(公告)日：2023-03-16

申请号：US17990157

申请日：2022-11-18

申请人： Lam Research Corporation

发明人： Gregory Kearns ,  Bryan L. Buckalew ,  Jacob Kurtis Blickensderfer

IPC分类号： C25D17/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/06 ,  C25D17/12

摘要： In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.