公开(公告)号：US11626286B1

公开(公告)日：2023-04-11

申请号：US17002605

申请日：2020-08-25

申请人： Rockwell Collins, Inc.

发明人： Jenny Calubayan ,  Richard Korneisel ,  Nathaniel P. Wyckoff ,  Brandon C. Hamilton ,  Kyle B. Snyder

IPC分类号： G03F7/00 ,  G03F7/22 ,  H01L21/02 ,  G03F1/00 ,  G03F9/00 ,  G03F7/20 ,  H01L21/027

摘要： Systems and methods for custom photolithography masking via a precision dispense apparatus and process are disclosed. Methods include creating a toolpath instruction for depositing opaque onto a substrate, programming a precision dispense apparatus to execute the created toolpath instruction, and causing the precision dispense tool to deposit opaque material onto the substrate to form the photomask. The substrate may be an optically transparent plate or film or may be an electronic substrate where the opaque material is deposited directly onto a photoresist coating. Capabilities of the systems and methods disclosed herein extend to 3D substrates and custom photolithography masking, among others.

公开(公告)号：US20220100082A1

公开(公告)日：2022-03-31

申请号：US17546227

申请日：2021-12-09

申请人： TOPPAN INC.

发明人： Akihito OKUMURA ,  Hiroaki MIYAJI ,  Takehiro YAMADA

IPC分类号： G03F1/70 ,  G03F7/20 ,  G03F1/00 ,  G02F1/1335 ,  G03F1/76 ,  G03F7/00

摘要： A photomask is used for scanning type projection exposure provided with a projection lens assembly composed of a lens assembly. A line width in a plurality of patterns of the photomask in a region to be transferred by performing scanning exposure including connecting portions of the lens assembly are corrected with respect to a line width of patterns which are the same as the patterns of the photomask present in a region to be transferred by performing scanning exposure but do not include the connecting portions.

公开(公告)号：US11133187B2

公开(公告)日：2021-09-28

申请号：US16046069

申请日：2018-07-26

申请人： Winbond Electronics Corp.

发明人： Chun-Hung Lin ,  Ching-Chun Huang ,  Chung-Chen Hsu

IPC分类号： G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  H01L21/266 ,  G03F1/00

摘要： A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.

公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

申请人： ASML NETHERLANDS B.V.

发明人： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC分类号： G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

摘要： A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US10915090B2

公开(公告)日：2021-02-09

申请号：US16889514

申请日：2020-06-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Danping Peng ,  Junjiang Lei ,  Daniel Beylkin ,  Kenneth Lik Kin Ho ,  Sagar Trivedi ,  Fangbo Xu

IPC分类号： G06F30/392 ,  G06F30/30 ,  G06F30/33 ,  G03F1/00 ,  G05B19/4097 ,  G03F1/70 ,  G03F1/36 ,  G03F1/24 ,  G06F111/20 ,  G06F119/18

摘要： Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

公开(公告)号：US20200341366A1

公开(公告)日：2020-10-29

申请号：US16765339

申请日：2018-11-27

申请人： ASML NETHERLANDS B.V. ,  ASML HOLDING N.V

发明人： Derk Servatius Gertruda BROUNS ,  Joshua ADAMS ,  Aage BENDIKSEN ,  Richard JACOBS ,  Andrew JUDGE ,  Veera Venkata Narasimha Narendra Phani KOTTAPALLI ,  Joseph Harry LYONS ,  Theodorus Marinus MODDERMAN ,  Manish RANJAN ,  Marcus Adrianus VAN DE KERKHOF ,  Xugang XIONG

IPC分类号： G03F1/64 ,  G03F1/00 ,  G03F7/20

摘要： An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

公开(公告)号：US10802392B2

公开(公告)日：2020-10-13

申请号：US16510855

申请日：2019-07-12

申请人： Applied Materials, Inc.

发明人： Banqiu Wu ,  Eli Dagan

IPC分类号： G03F1/00 ,  G03F1/54 ,  G03F1/46 ,  G03F1/80

摘要： Embodiments described herein relate to apparatus and methods for removing one or more films from a photomask to create a black border and one or more pellicle anchor areas thereon. A photomask substrate is exposed by removing the one or more films in the black border and pellicle anchor areas. The black border prevents a pattern on the photomask from overlapping a pattern on a substrate being processed. To create the black border and pellicle anchor areas, a laser beam is projected through a lens and focused on a surface of the films. The films are ablated by the laser beam without damaging the photomask substrate.

公开(公告)号：US20200312835A1

公开(公告)日：2020-10-01

申请号：US16901232

申请日：2020-06-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Minfeng CHEN ,  Shuo-Yen CHOU

IPC分类号： H01L27/02 ,  G03F7/20 ,  G03F1/36 ,  G03F1/00 ,  G03F1/54

摘要： A method includes providing a photomask having a patterned absorption layer over a substrate. The photomask is irradiated with a beam having a mixture of transverse electronic (TE) waves and transverse magnetic (TM) waves. The irradiating includes generating surface plasmonic polaritons (SPP) on a sidewall of the patterned absorption layer. The SPP is used to suppress the TM waves while reflecting the TE waves. A target substrate is exposed to TE waves.

公开(公告)号：US10734383B2

公开(公告)日：2020-08-04

申请号：US15860046

申请日：2018-01-02

申请人： Tela Innovations, Inc.

发明人： Michael C. Smayling ,  Scott T. Becker

IPC分类号： H01L27/092 ,  H01L21/768 ,  H01L27/02 ,  H01L23/528 ,  H01L21/8238 ,  H01L21/285 ,  H01L21/8234 ,  H01L27/088 ,  G06F30/394 ,  H01L27/105 ,  G03F1/00

摘要： An integrated circuit includes a gate electrode level region that includes a plurality of linear-shaped conductive structures. Each of the plurality of linear-shaped conductive structures is defined to extend lengthwise in a first direction. Some of the plurality of linear-shaped conductive structures form one or more gate electrodes of corresponding transistor devices. A local interconnect conductive structure is formed between two of the plurality of linear-shaped conductive structures so as to extend in the first direction along the two of the plurality of linear-shaped conductive structures.

公开(公告)号：US10698318B2

公开(公告)日：2020-06-30

申请号：US16026675

申请日：2018-07-03

申请人： Carl Zeiss SMT GmbH

发明人： Holger Seitz ,  Ute Buttgereit ,  Thomas Thaler ,  Thomas Frank ,  Ulrich Matejka ,  Markus Deguenther ,  Robert Birkner ,  Dominik Grau

IPC分类号： G03F7/20 ,  G03F1/00 ,  G03F1/84 ,  G01N21/956

摘要： The invention relates to a method and a device for characterizing a mask for microlithography. In a method according to the invention, structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus are illuminated by an illumination optical unit, wherein the mask is imaged onto a detector unit by an imaging optical unit, wherein image data recorded by the detector unit are evaluated in an evaluation unit. In this case, for emulating an illumination setting predefined for the lithography process in the microlithographic projection exposure apparatus, the imaging of the mask onto the detector unit is carried out in a plurality of individual imagings which differ from one another with regard to the illumination setting set in the illumination optical unit or the polarization-influencing effect set in the imaging optical unit.