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公开(公告)号：US20240427228A1
公开(公告)日：2024-12-26
申请号：US18740794
申请日：2024-06-12
Applicant: Kioxia Corporation
Inventor： Kosuke TAKAI , Katsuyoshi KODERA
Abstract: A photomask blank includes a substrate, a first transmittance adjusting film provided on the substrate, a phase shifter film provided on the first transmittance adjusting film, and a second transmittance adjusting film provided on the phase shifter film. When light having a wavelength transmits through the phase shifter film, a phase of the light transmitted through the phase shifter film and the first transmittance adjusting film is different from a phase of light passed through atmosphere with about 180 degrees, and a phase of the light transmitted through the phase shifter film and the second transmittance adjusting film is different from a phase of the light passed through the atmosphere with about 180 degrees.
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公开(公告)号：US20240377722A1
公开(公告)日：2024-11-14
申请号：US18779098
申请日：2024-07-22
Inventor： Chih-Chiang Tu , Chun-Lang Chen , Shih-Hao Yang , Jheng-Yuan Chen
Abstract: A mask includes a reflective layer, an absorption layer, a buffer layer and an absorption part. The absorption layer is disposed over the reflective layer. The buffer layer is disposed between the reflective layer and the absorption layer. The absorption part is disposed in the reflective layer, the buffer layer and the absorption layer.
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公开(公告)号：US20240345467A1
公开(公告)日：2024-10-17
申请号：US18638000
申请日：2024-04-17
Applicant: SK enpulse Co., Ltd.
Inventor： Tae Wan KIM , Geon Gon LEE , Min Gyo JEONG , Hyung Joo LEE , Tae Young KIM
Abstract: A method of fabricating a blank mask, the method including: forming a light-shielding film on a light-transmissive substrate; and cleaning the light-shielding film with a cleaning solution, wherein in the cleaning, the light-shielding film has a thickness change of less than 5 nm. The blank mask may include a light-transmissive substrate and a light-shielding film disposed on the light-transmissive substrate. Further, on an entire surface of the blank mask, a content of halogen ions is less than 0.05 ng/cm2, a content of nitrogen-based ions is less than 2 ng/cm2, and a content of sulfur-based ions is less than 0.1 ng/cm2. The blank mask may be a photomask.
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公开(公告)号：US12099293B2
公开(公告)日：2024-09-24
申请号：US17328008
申请日：2021-05-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hwanseok Seo , Seongsue Kim , Changyoung Jeong
Abstract: A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.
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公开(公告)号：US12013634B2
公开(公告)日：2024-06-18
申请号：US18076375
申请日：2022-12-06
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
CPC classification number: G03F1/84 , G01N21/00 , G03F1/26 , G03F1/44 , G03F7/70283 , G03F7/70633 , G03F7/70683 , G06F30/39
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
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Patent Agency Ranking
公开(公告)号：US12013631B2
公开(公告)日：2024-06-18
申请号：US18073794
申请日：2022-12-02
Applicant: HOYA CORPORATION
Inventor： Hiroaki Shishido
Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.
The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.-
公开(公告)号：US11982936B2
公开(公告)日：2024-05-14
申请号：US17855630
申请日：2022-06-30
Inventor： Hsin-Chang Lee , Ping-Hsun Lin , Yen-Cheng Ho , Chih-Cheng Lin , Chia-Jen Chen
Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.
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公开(公告)号：US11927880B2
公开(公告)日：2024-03-12
申请号：US17572390
申请日：2022-01-10
Applicant: S&S TECH Co., Ltd.
Inventor： Yong-Dae Kim , Chul-Kyu Yang , Min-Kwang Park , Mi-Kyung Woo
Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.
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公开(公告)号：US11852964B2
公开(公告)日：2023-12-26
申请号：US17325627
申请日：2021-05-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Takahiro Onoue
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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公开(公告)号：US11837470B2
公开(公告)日：2023-12-05
申请号：US17229478
申请日：2021-04-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jisun Lee , Seokwoo Jeon , Sanghyun Nam
IPC: H01L21/027 , G03F1/26 , G03F7/20 , H01L21/02 , H01L29/06 , H01L29/775 , H01L29/786 , H01L29/66 , H01L29/423
CPC classification number: H01L21/0275 , G03F1/26 , G03F7/201 , H01L21/02603 , H01L21/02642 , H01L29/0673 , H01L29/42392 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L29/78696
Abstract: A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.
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