公开(公告)号：US20230135117A1

公开(公告)日：2023-05-04

申请号：US18147228

申请日：2022-12-28

申请人： FUJIFILM Corporation

发明人： Tetsuya KAMIMURA

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/075 ,  G03F7/00 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

摘要： An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability.
Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.
The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

公开(公告)号：US11640911B2

公开(公告)日：2023-05-02

申请号：US17646345

申请日：2021-12-29

申请人： Tokyo Electron Limited

发明人： Tatsuhiro Ueki ,  Jian Zhang

IPC分类号： H01L21/67 ,  G01N21/95 ,  B05B12/08 ,  B05C11/10 ,  G03F7/16 ,  G01B11/02 ,  H01L21/66 ,  B05B12/12 ,  B05D1/00 ,  B24B49/04 ,  G01B11/06

摘要： A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

公开(公告)号：US20230130385A1

公开(公告)日：2023-04-27

申请号：US18048618

申请日：2022-10-21

申请人： Tokyo Electron Limited

发明人： Takahiro YONEZAWA ,  Koki TANAKA

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/36 ,  G03F7/16

摘要： In one exemplary embodiment, a method for forming a pattern includes (a) forming, on a substrate, a first pattern having an opening and containing a first material, (b) forming a filling portion in the opening, the filling portion containing a second material different from the first material, and (c) removing the first pattern so that the filling portion remains as a second pattern inverted with respect to the first pattern. At least one of the first material or the second material contains tin.

公开(公告)号：US11635691B2

公开(公告)日：2023-04-25

申请号：US16921023

申请日：2020-07-06

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Daisuke Kori ,  Takashi Sawamura ,  Keisuke Niida ,  Seiichiro Tachibana ,  Takeru Watanabe ,  Tsutomu Ogihara

IPC分类号： G03F7/09 ,  C08G61/12 ,  C08G61/10 ,  C08J5/18 ,  G03F7/16 ,  G03F7/075 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  H01L21/311 ,  H01L21/027

摘要： A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W1; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.

公开(公告)号：US11635690B2

公开(公告)日：2023-04-25

申请号：US16916453

申请日：2020-06-30

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Jun Hatakeyama ,  Masaki Ohashi ,  Takayuki Fujiwara

IPC分类号： G03F7/039 ,  G03F7/004 ,  C08F220/18 ,  C08F212/14 ,  G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

摘要： A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

公开(公告)号：US11628467B2

公开(公告)日：2023-04-18

申请号：US16697288

申请日：2019-11-27

申请人： The Regents of the University of California

发明人： Christopher Bates ,  Yuanyi Zhang

IPC分类号： B05D1/32 ,  C09D133/02 ,  C09D125/06 ,  B05D1/00 ,  C08F293/00 ,  C09D155/00 ,  H01L21/67 ,  G03F7/16 ,  B05D1/36

摘要： A method of coating a structure is disclosed. Method steps include providing a structure having a first portion of a first material having a first surface and providing a second portion of a second material having a second surface, wherein a mask is provided over the first surface. Another step includes exposing the mask and the second surface to a solution comprising a polymer and a solvent, wherein the solution dewets from the mask and the polymer collects onto the second surface to form a polymer coating over the second surface without forming a polymer coating on the first surface.

公开(公告)号：US11624982B2

公开(公告)日：2023-04-11

申请号：US16631985

申请日：2018-11-09

申请人： LG CHEM, LTD.

发明人： Seung Yeon Hwang ,  Dai Seung Choi ,  Min Hyung Lee ,  Dongmin Jeong

IPC分类号： G03F7/037 ,  G03F7/038 ,  G03F7/023 ,  G03F7/38 ,  G03F7/40 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

摘要： A photosensitive resin composition including a polyamide-imide resin having a specific structure, a film comprising a cured product of the photosensitive resin composition, a method for preparing the film and a method for forming a resist pattern using the photosensitive resin composition.

公开(公告)号：US20230060585A1

公开(公告)日：2023-03-02

申请号：US17783453

申请日：2020-12-10

申请人： NISSAN CHEMICAL CORPORATION

发明人： Hikaru TOKUNAGA ,  Makoto NAKAJIMA

IPC分类号： G03F7/11 ,  C08G12/26 ,  C09D161/26 ,  C08G12/08 ,  C09D161/22 ,  C08G4/00 ,  C09D161/00 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  H01L21/311 ,  H01L21/308

摘要： A composition for forming resist underlayer film for nanoimprinting includes novolac resin that has a repeating unit structure represented by formula (1). In formula (1), group A represents organic group having an aromatic ring, a condensed aromatic ring, or a condensed aromatic heterocycle, group B represents organic group having an aromatic ring or a condensed aromatic ring, group E represents a single bond or a branched or straight-chain C1-10 alkylene group that may be substituted and may include an ether bond and/or a carbonyl group, group D represents organic group that has 1 to 15 carbon atoms and is represented by formula (2) (in which R1, R2, and R3 each independently represent a fluorine atom, or a straight-chain, branched-chain, or cyclic alkyl group, and any two of R1, R2, and R3 may be bonded to one another to form a ring), and n represents a number from 1 to 5.

公开(公告)号：US20230032950A1

公开(公告)日：2023-02-02

申请号：US17390298

申请日：2021-07-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Wei-Che HSIEH ,  Chi-Lun LU ,  Ping-Hsun LIN ,  Fu-Sheng CHU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC分类号： G03F1/24 ,  G03F1/54 ,  G03F7/40 ,  G03F7/16

摘要： A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.

公开(公告)号：US20230031955A1

公开(公告)日：2023-02-02

申请号：US17758567

申请日：2021-01-29

申请人： Lam Research Corporation

发明人： Jengyi Yu ,  Da Li ,  Samantha S.H. Tan ,  Younghee Lee

IPC分类号： G03F7/16 ,  H01L21/027 ,  G03F7/38

摘要： Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. For instance, the techniques herein may involve providing a substrate in a process chamber, where the substrate includes a photoresist layer over a substrate layer, and where the photoresist includes metal, and treating the photoresist to modify material properties of the photoresist such that etch selectivity in a subsequent post-exposure dry development process is increased. In various embodiments, the treatment may involve exposing the substrate to elevated temperatures and/or to a remote plasma. One or more process conditions such as temperature, pressure, ambient gas chemistry, gas flow/ratio, and moisture may be controlled during treatment to tune the material properties as desired.