公开(公告)号：US12094100B2

公开(公告)日：2024-09-17

申请号：US17686382

申请日：2022-03-03

申请人： KLA Corporation

发明人： Mark Ghinovker ,  Yoel Feler

IPC分类号： G06T7/68 ,  G03F9/00 ,  G06T7/00 ,  G06T7/73 ,  H01L21/027

CPC分类号： G06T7/0004 ,  G03F9/7092 ,  G06T7/68 ,  G06T7/73 ,  G06T2207/30148 ,  H01L21/0274

摘要： A method of semiconductor metrology includes patterning a film layer on a semiconductor substrate to define a first field on the semiconductor substrate with a first pattern comprising at least a first target feature within a first margin along a first edge of the first field and to define a second field, which abuts the first field, with a second pattern comprising at least a second target feature within a second margin along a second edge of the second field, such that the second edge of the second field adjoins the first edge of the first field. The first target feature in the first margin is adjacent to the second target feature in the second margin without overlapping the second target feature. An image is captured of at least the first and second target features and is processed to detect a misalignment between the first and second fields.

公开(公告)号：US12090687B2

公开(公告)日：2024-09-17

申请号：US17133983

申请日：2020-12-24

申请人： Purdue Research Foundation

发明人： Yung C. Shin ,  Shashank Sarbada

IPC分类号： G03F9/00 ,  B23K26/0622 ,  B23K26/352 ,  B29C33/38 ,  B29C33/42 ,  B29C35/02 ,  B29C41/42 ,  B81C1/00 ,  C08L83/04 ,  C09D183/04 ,  B23K103/04 ,  B23K103/10 ,  B23K103/12 ,  B29K83/00

CPC分类号： B29C33/42 ,  B23K26/0624 ,  B23K26/355 ,  B29C33/3857 ,  B29C35/02 ,  B29C41/42 ,  B81C1/00031 ,  B81C1/00055 ,  B81C1/00119 ,  C08L83/04 ,  C09D183/04 ,  B23K2103/04 ,  B23K2103/10 ,  B23K2103/12 ,  B29K2083/00

摘要： A method of creating a polymer surface with surface structures is disclosed. The method includes creating a mold, forming a metal sheet into the molds, creating a surface structure on a surface of the metal sheet by exposing the surface to laser pulses, and bringing a curable polymer to be in contact with the surface of the metal sheet containing the surface structure, curing the curable polymer, and separating the cured polymer from the metal sheet, resulting in a polymer surface containing the surface structure. The polymer surfaces with the surface structures can be hydrophobic or superhydrophobic depending on the micro and nano features contained by the surface structures.

公开(公告)号：US20240302757A1

公开(公告)日：2024-09-12

申请号：US18665285

申请日：2024-05-15

申请人： ENTEGRIS, INC.

发明人： Russ V. Raschke ,  Brian Wiseman

IPC分类号： G03F9/00 ,  G03F1/66

CPC分类号： G03F9/7011 ,  G03F1/66

摘要： Reticle pods include inner pods where motion limiting features restrict translational motion of the cover and the baseplate relative to one another. The motion limiting features are in addition to gross alignment features included in the inner pod. The motion limiting features resist the translational motion before the gross alignment features would resist the motion. Motion limiting features can include elastic bodies providing friction against contact surfaces, or pins received on elastic contact surfaces or in diaphragms or motion limiting cups.

公开(公告)号：US12085383B2

公开(公告)日：2024-09-10

申请号：US17641602

申请日：2020-09-08

申请人： AUROS TECHNOLOGY, INC.

发明人： Gyu Nam Park ,  Hyeon Gi Shin ,  Seung Soo Lee

IPC分类号： G01B11/27 ,  G01B11/06 ,  G03F7/00 ,  G03F9/00 ,  H01L21/67

CPC分类号： G01B11/27 ,  G01B11/0608 ,  G03F7/70633 ,  G03F7/7085 ,  G03F9/7088 ,  H01L21/67259

摘要： An overlay measurement device measures an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer. The device is configured to detect a height of the first overlay mark based on a change in the signal of the first detector according to a change in the relative position of the objective lens with respect to the wafer in the optical axis direction and detect a height of the second overlay mark based on a change in the signal of the second detector according to a change in the relative position of the objective lens with respect to the wafer in the optical axis direction.

公开(公告)号：US12078922B2

公开(公告)日：2024-09-03

申请号：US17472387

申请日：2021-09-10

申请人： Kioxia Corporation

发明人： Takashi Sato ,  Takeshi Suto ,  Satoshi Mitsugi

IPC分类号： G03F1/42 ,  G01B11/27 ,  G03F7/00 ,  G03F9/00 ,  H01L23/544

CPC分类号： G03F1/42 ,  G01B11/27 ,  G03F7/0002 ,  G03F9/7042 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54466

摘要： A template of one embodiment includes an alignment mark. The alignment mark includes a first main pattern and a first auxiliary pattern. In the first main pattern, a first part and a second part are disposed according to a predetermined repeating pattern. The first auxiliary pattern is configured as a pattern opposite to the repeating pattern in a region outside an end of the first main pattern.

公开(公告)号：US20240288845A1

公开(公告)日：2024-08-29

申请号：US18581643

申请日：2024-02-20

申请人： CANON KABUSHIKI KAISHA

发明人： TOMOHIRO MASE

IPC分类号： G05B19/402 ,  G03F7/00 ,  G03F9/00

CPC分类号： G05B19/402 ,  G03F7/706839 ,  G03F9/7046 ,  G05B2219/41091

摘要： An information processing apparatus includes a processor configured to determine, using a first regression model formed by a plurality of terms, a plurality of sample shot regions from a plurality of shot regions on a substrate, and a display controller configured to perform display control so that information of the plurality of sample shot regions determined by the processor is displayed on a user interface screen. The processor is configured to redetermine a plurality of sample shot regions using a second regression model formed by some terms of the plurality of terms, and the display controller is configured to update display of the user interface screen so that information of the plurality of sample shot regions redetermined by the processor is displayed on the user interface screen.

公开(公告)号：US20240264537A1

公开(公告)日：2024-08-08

申请号：US18682692

申请日：2022-07-05

申请人： ASML Netherlands B.V.

发明人： Gijs TEN HAAF ,  Niels HAVIK ,  Joost ROOZE ,  Vu Quang TRAN

IPC分类号： G03F7/00 ,  G03F9/00 ,  G06F30/398

CPC分类号： G03F7/705 ,  G03F7/70508 ,  G03F7/70633 ,  G03F7/706837 ,  G03F7/706839 ,  G03F9/7046 ,  G06F30/398

摘要： Disclosed is a method for modeling alignment data over a substrate area relating to a substrate being exposed in a lithographic process. The method comprises obtaining alignment data relating to said substrate and separating the alignment data into systematic component which is relatively stable between different substrates and a non-systematic component which is not relatively stable between different substrates. The systematic component and the non-systematic component are individually modeled and a process correction for the substrate determined based on the modeled systematic component and modeled non-systematic component.

公开(公告)号：US20240264529A1

公开(公告)日：2024-08-08

申请号：US18432445

申请日：2024-02-05

申请人： CANON KABUSHIKI KAISHA

发明人： NAOKI KIYOHARA ,  SENTARO AIHARA ,  YUICHIRO OGUCHI

IPC分类号： G03F7/16 ,  G03F7/00 ,  G03F9/00

CPC分类号： G03F7/161 ,  G03F7/0002 ,  G03F9/7042

摘要： An information processing method is applied to a film forming method of forming a cured film by arranging a plurality of droplets of a curable composition on a substrate and curing a liquid film formed by connecting the plurality of droplets. The method is of deciding an arrangement of the plurality of droplets in the film forming method, and includes updating the arrangement of the plurality of droplets until an evaluation result of the arrangement of the plurality of droplets satisfies an end condition while evaluating the arrangement of the plurality of droplets using a learned model that receives the arrangement of the plurality of droplets and outputs an evaluation value of the arrangement of the plurality of droplets.

公开(公告)号：US20240263941A1

公开(公告)日：2024-08-08

申请号：US18562675

申请日：2022-05-24

申请人： ASML Netherlands B.V.

发明人： Rui CHENG ,  Joshua ADAMS ,  Franciscus Godefridus Casper BIJNEN ,  Eric Brian CATEY ,  Igor Matheus Petronella AARTS

IPC分类号： G01B11/27 ,  G03F9/00

CPC分类号： G01B11/272 ,  G03F9/7046 ,  G03F9/7065 ,  G03F9/7069 ,  G03F9/7076 ,  G03F9/7092

摘要： Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.

公开(公告)号：US12057332B2

公开(公告)日：2024-08-06

申请号：US15646039

申请日：2017-07-10

申请人： Ayar Labs, Inc.

发明人： Chen Sun ,  Roy Edward Meade ,  Mark Wade ,  Alexandra Wright ,  Vladimir Stojanovic

IPC分类号： H01L21/304 ,  B05D1/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/36 ,  G03F7/16 ,  G03F9/00 ,  H01L21/67 ,  H01S5/026

CPC分类号： H01L21/6715 ,  B05D1/005 ,  G02B6/12004 ,  G02B6/1225 ,  G02B6/3692 ,  G03F7/162 ,  G03F9/708 ,  G03F9/7084 ,  H01S5/0265 ,  G02B2006/12061

摘要： A photoresist material is deposited, patterned, and developed on a backside of a wafer to expose specific regions on the backside of chips for etching. These specific regions are etched to form etched regions through the backside of the chips to a specified depth within the chips. The specified depth may correspond to an etch stop material. Etching of the backside of the wafer can also be done along the chip kerf regions to reduce stress during singulation/dicing of individual chips from the wafer. Etching of the backside of the chips can be done with the chips still part of the intact wafer. Or, the wafer having the pattered and developed photoresist on its backside can be singulated/diced before etching through the backside of the individual chips. The etched region(s) formed through the backside of a chip can be used for attachment of optical component(s) to the chip.