On-Die Termination of Address and Command Signals

    公开(公告)号:US20250037746A1

    公开(公告)日:2025-01-30

    申请号:US18680395

    申请日:2024-05-31

    Applicant: Rambus Inc.

    Abstract: A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.

    Memory controller with hybrid DRAM/persistent memory channel arbitration

    公开(公告)号:US11995008B2

    公开(公告)日:2024-05-28

    申请号:US17354806

    申请日:2021-06-22

    CPC classification number: G06F13/1642 G11C11/4063

    Abstract: A memory controller includes a command queue having an input for receiving memory access commands for a memory channel, and a number of entries for holding a predetermined number of memory access commands, and an arbiter that selects memory commands from the command queue for dispatch to one of a persistent memory and a DRAM memory coupled to the memory channel. The arbiter includes a first-tier sub-arbiter circuit coupled to the command queue for selecting candidate commands from among DRAM commands and persistent memory commands, and a second-tier sub-arbiter circuit coupled to the first-tier sub-arbiter circuit for receiving the candidate commands and selecting at least one command from among the candidate commands.

    SEMICONDUCTOR DEVICE CAPABLE OF SWITCHING OPERATION VOLTAGE

    公开(公告)号:US20240170040A1

    公开(公告)日:2024-05-23

    申请号:US18460992

    申请日:2023-09-05

    CPC classification number: G11C11/4063 H01L23/5283 H01L23/5286

    Abstract: An apparatus that includes first, second, third and fourth circuit regions arranged in a first direction in numerical order. The first circuit region includes a first global power supply line extending in a second direction vertical to the first direction and a first local power supply line, the first local power supply line being branched from the first global power supply line and extending in the first direction across the second, third and fourth regions. The third circuit region includes a first power switch coupled between the first local power supply line and an internal power supply line extending in the first direction across the first, second, third and fourth regions. Each of the second and fourth regions includes a circuit coupled to the first local power supply line and an additional circuit coupled to the internal power supply line.

    Oblivious carry runway registers for performing piecewise additions

    公开(公告)号:US11710063B2

    公开(公告)日:2023-07-25

    申请号:US17967559

    申请日:2022-10-17

    Applicant: Google LLC

    Inventor: Craig Gidney

    Abstract: Methods and apparatus for piecewise addition into an accumulation register using one or more carry runway registers, where the accumulation register includes a first plurality of qubits with each qubit representing a respective bit of a first binary number and where each carry runway register includes multiple qubits representing a respective binary number. In one aspect, a method includes inserting the one or more carry runway registers into the accumulation register at respective predetermined qubit positions, respectively, of the accumulation register; initializing each qubit of each carry runway register in a plus state; applying one or more subtraction operations to the accumulation register, where each subtraction operation subtracts a state of a respective carry runway register from a corresponding portion of the accumulation register; and adding one or more input binary numbers into the accumulation register using piecewise addition.

    SURFACE CODE COMPUTATIONS USING AUTO-CCZ QUANTUM STATES

    公开(公告)号:US20230177373A1

    公开(公告)日:2023-06-08

    申请号:US18101522

    申请日:2023-01-25

    Applicant: Google LLC

    Abstract: Methods and apparatus for performing surface code computations using Auto-CCZ states. In one aspect, a method for implementing a delayed choice CZ operation on a first and second data qubit using a quantum computer includes: preparing a first and second routing qubit in a magic state; interacting the first data qubit with the first routing qubit and the second data qubit with the second routing qubit using a first and second CNOT operation, where the first and second data qubits act as controls for the CNOT operations; if a received first classical bit represents an off state: applying a first and second Hadamard gate to the first and second routing qubit; measuring the first and second routing qubit using Z basis measurements to obtain a second and third classical bit; and performing classically controlled fixup operations on the first and second data qubit using the second and third classical bits.

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