公开(公告)号：US20230126018A1

公开(公告)日：2023-04-27

申请号：US18087262

申请日：2022-12-22

申请人： Carl Zeiss SMT GmbH

发明人： Hartmut ENKISCH ,  Sandro HOFFMANN ,  Joern WEBER ,  Sebastian STROBEL ,  Mirko RIBOW ,  Christoph NOTTBOHM ,  Matthias STURM ,  Michael KRAUSE

IPC分类号： G21K1/06 ,  G02B1/12 ,  G02B5/20 ,  G03F7/20

摘要： In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer (221) is applied onto a substrate (20) so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

公开(公告)号：US11615956B2

公开(公告)日：2023-03-28

申请号：US17365112

申请日：2021-07-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byeong-hwan Jeon

IPC分类号： G03F7/20 ,  H05G2/00 ,  H01L21/027 ,  G21K1/06 ,  G21K1/02 ,  G21K1/10

摘要： A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

公开(公告)号：US11615897B2

公开(公告)日：2023-03-28

申请号：US17760684

申请日：2020-09-15

申请人： RI Research Instruments GmbH

发明人： Rainer Lebert ,  Christoph Sebastian Phiesel ,  Thomas Missalla ,  Andreas Biermanns-Foeth ,  Christian Piel

IPC分类号： G21K1/06 ,  G03F1/84 ,  G03F7/20 ,  G21K1/10 ,  G21K7/00

摘要： A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ

公开(公告)号：US20230041588A1

公开(公告)日：2023-02-09

申请号：US17970850

申请日：2022-10-21

申请人： Carl Zeiss SMT GmbH

发明人： Moritz BECKER ,  Dirk Heinrich EHM

IPC分类号： G03F7/20 ,  G02B5/08 ,  G21K1/06

摘要： A method for operating an EUV lithography apparatus (1) with at least one vacuum housing (27) for at least one reflective optical element (12) includes operating the EUV lithography apparatus in an exposure operating mode (B), in which EUV radiation (5) is radiated into the vacuum housing, wherein a reducing plasma is generated at a surface (12a) of the reflective optical element in response to an interaction of the EUV radiation with a residual gas present in the vacuum housing. After an exposure pause, in which no EUV radiation is radiated into the vacuum housing, and before renewed operation of the EUV lithography apparatus in the exposure operating mode (B), the EUV lithography apparatus is operated in a recovery operating mode, in which oxidized contaminants at the surface of the reflective optical element are reduced in order to recover a transmission of the EUV lithography apparatus before the exposure pause.

公开(公告)号：US20220382048A1

公开(公告)日：2022-12-01

申请号：US17885217

申请日：2022-08-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yu-Chih CHEN ,  Po-Chung CHENG ,  Li-Jui CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Wei-Chun YEN

IPC分类号： G02B27/00 ,  G02B5/08 ,  G21K1/06 ,  H05G2/00 ,  G03F7/20

摘要： An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

公开(公告)号：US20220382046A1

公开(公告)日：2022-12-01

申请号：US17333717

申请日：2021-05-28

申请人： KLA Corporation

发明人： Rudy F. Garcia ,  Michael Lang ,  Ravichandra Jagannath

IPC分类号： G02B27/00 ,  G21K1/06

摘要： Systems and methods for mitigating and reducing contamination of one or more components of overlay inspection systems are disclosed. Specifically, embodiments of the present disclosure may utilize a counterflow of purge gas through a counterflow nozzle to reduce the presence of contaminants within one or more portions of an inspection system. The system may include a source chamber, one or more vacuum chambers, an intermediate focus housing having an aperture, an illumination source configured to generate and direct illumination through the aperture in an illumination direction, and a counterflow nozzle configured to direct a counterflow of purge gas into the source chamber in a direction opposite the illumination direction.

公开(公告)号：US20220351874A1

公开(公告)日：2022-11-03

申请号：US17762477

申请日：2020-09-23

申请人： CONVERGENT R.N.R. LTD

发明人： Shirly BORUKHIN ,  Michael KLECKNER ,  Aharon BAR-DAVID ,  Zeev HAREL

IPC分类号： G21K1/06 ,  B23H7/02 ,  B23H9/00

摘要： A method of manufacturing burr-edged reflecting tile elements for a mosaic X-ray lens configured for forming an X-ray beam comprises steps of: (a) providing a single crystal having first and second faces thereof being parallel therebetween; single crystal having crystallographic planes thereof being parallel to first and second faces of the single crystal; the first face dedicated for reflecting an X-ray beam to be incident thereto; (b) cutting the single crystal by means of a wire electrical discharging machine normally to the main faces. The step of cutting the single crystal comprises moving a wire within a cut in direction from the second face to the first face; such that burrs configured for reflecting the X-ray beam to be incident thereto are formed on edges of the cut.

公开(公告)号：US11488740B2

公开(公告)日：2022-11-01

申请号：US17097770

申请日：2020-11-13

申请人： Joyoni Dey ,  Narayan Bhusal ,  Leslie Butler ,  Jonathan P. Dowling ,  Kyungmin Ham ,  Varshni Singh

发明人： Joyoni Dey ,  Narayan Bhusal ,  Leslie Butler ,  Jonathan P. Dowling ,  Kyungmin Ham ,  Varshni Singh

IPC分类号： G01N23/00 ,  G21K1/06 ,  G01N23/041

摘要： A phase contrast X-ray imaging system includes: an illumination source adapted to illuminate a region of interest; a diffraction grating adapted to receive illumination from the illuminated region of interest, the diffraction grating comprising a spatial structure having a first periodicity superimposed with a second periodicity that is different from the first periodicity; and a detector adapted to detect illumination passing through the diffraction grating, wherein the spatial structure is defined by varying height and/or pitch, and wherein the spatial structure imparts a first phase dependence based on the first periodicity and an additional phase dependence based on the second periodicity on the illumination passing through the diffraction grating.

公开(公告)号：US11477877B2

公开(公告)日：2022-10-18

申请号：US16665335

申请日：2019-10-28

申请人： Gigaphoton Inc.

发明人： Hitoshi Nagano ,  Yasunori Wada ,  Tatsuya Yanagida ,  Osamu Wakabayashi

IPC分类号： H05G2/00 ,  H01S3/107 ,  G03F7/20 ,  H01S3/23 ,  H01S3/00 ,  H01S3/10 ,  G21K1/06 ,  H01L21/027 ,  H01S3/13 ,  H01S3/16 ,  H01S5/40 ,  H01S3/115

摘要： A system for generating extreme ultraviolet light, in which a target material inside a chamber is irradiated with a laser beam to be turned into plasma, includes a first laser apparatus configured to output a first laser beam, a second laser apparatus configured to output a pedestal and a second laser beam, and a controller connected to the first and second laser apparatuses and configured to cause the first laser beam to be outputted first, the pedestal to be outputted after the first laser beam, and the second laser beam having higher energy than the pedestal to be outputted after the pedestal.

公开(公告)号：US11437161B1

公开(公告)日：2022-09-06

申请号：US17243300

申请日：2021-04-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chun-Lin Chang ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Han-Lung Chang ,  Heng-Hsin Liu ,  Li-Jui Chen ,  Chin-Hsiang Lin

IPC分类号： G21K1/06 ,  G03F7/20 ,  H05G2/00

摘要： An apparatus includes an extreme ultraviolet light source vessel having an intermediate focus, a scanner having a light source aperture, and a deflection module arranged between the intermediate focus and the light source aperture. The deflection module includes a first electrode plate and a second electrode plate, configured to create an electric field therebetween. Tin particles moving from the intermediate focus to the light source aperture passes through the deflection module, and are deflected by the electric field therein.