公开(公告)号：US20240355632A1

公开(公告)日：2024-10-24

申请号：US18638335

申请日：2024-04-17

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Yasuyuki YAMAMOTO ,  Tomohiro IMATA ,  Daisuke KORI

IPC分类号： H01L21/308 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/3081 ,  G03F7/094 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： The present invention is a composition for forming an organic film, comprising: a resin for forming an organic film; a polymer having a unit represented by the general formula (I), and at least one of a unit represented by the general formula (II) and a unit represented by the general formula (III); and a solvent, wherein the unit represented by the general formula (I), and at least one of the unit represented by the general formula (II) and the unit represented by the general formula (III) form a random copolymer, and the polymer has a fluorine content of 5 mass % to 16 mass %. This provides: a composition for forming an organic film that has excellent film-formability on a substrate and filling characteristics, and that inhibits humps in EBR process; and a method for forming an organic film, and patterning process using this composition.

公开(公告)号：US20240355623A1

公开(公告)日：2024-10-24

申请号：US18761585

申请日：2024-07-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yi-Chen KUO ,  Chih-Cheng LIU ,  Ming-Hui WENG ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC分类号： H01L21/027 ,  H01L21/02

CPC分类号： H01L21/0275 ,  H01L21/0228 ,  H01L21/02362

摘要： A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US12125852B2

公开(公告)日：2024-10-22

申请号：US18360895

申请日：2023-07-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Huan-Chieh Su ,  Li-Zhen Yu ,  Chun-Yuan Chen ,  Shih-Chuan Chiu ,  Cheng-Chi Chuang ,  Yu-Ming Lin ,  Chih-Hao Wang

IPC分类号： H01L27/088 ,  H01L21/027 ,  H01L21/306 ,  H01L21/308

CPC分类号： H01L27/0886 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3086

摘要： A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.

公开(公告)号：US12125800B2

公开(公告)日：2024-10-22

申请号：US17683474

申请日：2022-03-01

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Chun-Yen Wei

IPC分类号： H01L23/544 ,  H01L21/768 ,  H01L23/522 ,  H01L21/027 ,  H01L21/033

CPC分类号： H01L23/544 ,  H01L21/76802 ,  H01L23/5226 ,  H01L21/0274 ,  H01L21/0337 ,  H01L2223/54426

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a first conductive feature, a first light-emitting feature, a first pattern and a second pattern. The first light-emitting feature is disposed on the substrate. The first pattern is disposed on the first light-emitting feature. The second pattern is disposed on the first pattern. The first conductive feature is disposed on the substrate and at least laterally overlaps the first pattern. The first light-emitting feature is configured to emit a light of a first wavelength. The first pattern has a first transmittance to the light of the first wavelength. The second pattern has a second transmittance to the light of the first wavelength. The first transmittance is different from the second transmittance.

公开(公告)号：US12125453B2

公开(公告)日：2024-10-22

申请号：US18234465

申请日：2023-08-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hajime Kimura

IPC分类号： G09G3/36 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1335 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/027 ,  H01L21/465 ,  H01L21/4763 ,  H01L21/67 ,  H01L29/24

CPC分类号： G09G3/3614 ,  G02F1/136286 ,  G09G3/3648 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1262 ,  H01L29/66969 ,  H01L29/7869 ,  G02F1/133512 ,  G02F1/136295 ,  G02F1/1368 ,  G02F1/13685 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2310/0297 ,  G09G2320/0223 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02675 ,  H01L21/0274 ,  H01L21/465 ,  H01L21/47635 ,  H01L21/67115 ,  H01L27/1255 ,  H01L27/1274 ,  H01L29/24

摘要： A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

公开(公告)号：US12109734B2

公开(公告)日：2024-10-08

申请号：US17030813

申请日：2020-09-24

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Hiroyuki Yamazaki ,  Daiyu Okafuji ,  Masaki Takeuchi

IPC分类号： B29C33/38 ,  G03F7/00 ,  H01L21/027

CPC分类号： B29C33/3842 ,  G03F7/0002 ,  H01L21/0271

摘要： An imprint mold-forming substrate is manufactured by providing a starting imprint mold-forming substrate (1) having a patterned portion (2) and a non-patterned portion (5), providing a table (3) having a recess (4), bonding the substrate (1) to the table (3) such that the patterned portion (2) is received in the recess (4) of the table to define a space region (7) between the patterned portion (2) and the table (3) such that the patterned portion is not in direct contact with the table, and performing contour machining on the substrate (1) secured to the table (3).

公开(公告)号：US12106963B2

公开(公告)日：2024-10-01

申请号：US18140425

申请日：2023-04-27

申请人： Tessera LLC

发明人： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528 ,  H01L21/027 ,  H01L21/28 ,  H01L21/31 ,  H10K71/20 ,  H10N70/00

CPC分类号： H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31 ,  H01L21/76897 ,  H01L2224/0362 ,  H01L2224/11622 ,  H10K71/233 ,  H10N70/063

摘要： A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

公开(公告)号：US12100616B2

公开(公告)日：2024-09-24

申请号：US17445436

申请日：2021-08-19

申请人： Tokyo Electron Limited

发明人： Kazuo Kibi ,  Shigetsugu Fujita ,  Kenji Suzuki ,  Mitsuhiro Okada

IPC分类号： H01L21/768 ,  H01L21/027

CPC分类号： H01L21/76805 ,  H01L21/0274 ,  H01L21/76877

摘要： A method of manufacturing a semiconductor device includes: planarizing a surface of a substrate having a conductive material embedded in a first hole so as to expose the conductive material embedded in the first hole, wherein the first hole is formed in a region which is on an insulating film laminated on the substrate and is surrounded by a spacer film; laminating a mask film on the surface of the substrate; forming a second hole in the mask film such that at least a portion of an upper surface of the conductive material embedded in the first hole is exposed; embedding the conductive material in the second hole; and removing the mask film.

公开(公告)号：US12099299B2

公开(公告)日：2024-09-24

申请号：US18354388

申请日：2023-07-18

申请人： Tokyo Electron Limited

发明人： Jodi Grzeskowiak ,  Anthony Schepis ,  Anton Devilliers

IPC分类号： G03F7/09 ,  G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088

摘要： A method for patterning a substrate in which a patterned photoresist structure can be formed on the substrate, the patterned photoresist structure having a sidewall. A conformal layer of spacer material can be deposited on the sidewall. The patterned photoresist structure can then be removed from the substrate, leaving behind the spacer material. Then, the substrate can be directionally etched using the sidewall spacer as an etch mask to form the substrate having a target critical dimension.

公开(公告)号：US12094723B2

公开(公告)日：2024-09-17

申请号：US17442308

申请日：2021-06-30

申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

发明人： Yuejiao Shu ,  Ming-Pu Tsai

IPC分类号： H10B12/00 ,  H01L21/027 ,  H01L21/3213

CPC分类号： H01L21/32139 ,  H01L21/0273 ,  H10B12/482

摘要： The present disclosure provides a method for forming semiconductor structure and a semiconductor structure. The method for forming semiconductor structure includes: providing a semiconductor base with a substrate and a first oxide material layer; wherein the first oxide material layer is arranged on the substrate, the first oxide material layer includes a first region and a second region located at edge of the first region; patterning and etching the first oxide material layer; wherein oxide line structures are formed, and an annular empty slot structure is formed; refilling a second material; wherein the second material in the first region forms a plurality of isolation line structures, and the second material in the second region forms an annular dummy isolation layer; removing the oxide line structure by patterning and etching, and forming through hole structures; and forming a conductive material layer in the through hole structures.