公开(公告)号：US12119378B2

公开(公告)日：2024-10-15

申请号：US17121073

申请日：2020-12-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jia-Heng Wang ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC分类号： H01L29/417 ,  H01L21/02 ,  H01L21/225 ,  H01L21/268 ,  H01L21/311 ,  H01L29/08 ,  H01L29/40 ,  H01L29/78

CPC分类号： H01L29/0847 ,  H01L21/02236 ,  H01L21/2253 ,  H01L21/268 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/401 ,  H01L29/41791 ,  H01L29/785

摘要： A semiconductor structure includes semiconductor fins disposed over a substrate, an epitaxial source/drain (S/D) feature disposed over the semiconductor fins, where a top surface portion of the epitaxial S/D feature includes two surfaces slanted downward toward each other at an angle, a silicide layer disposed conformally over the top portion of the epitaxial S/D feature, and an S/D contact disposed over the silicide layer, where a bottom portion of the S/D contact extends into the epitaxial S/D feature.

公开(公告)号：US20240332078A1

公开(公告)日：2024-10-03

申请号：US18194126

申请日：2023-03-31

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Michael T. WYANT ,  Joseph O. LIU ,  Christopher MANACK

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/66 ,  H01L21/683

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/6836 ,  H01L22/12

摘要： In a described example, a method includes thinning a first side of a semiconductor substrate, in which a plurality of dies are formed on a second side of the substrate opposite the first side and separated from each other by scribe streets of the substrate. The method also includes directing a laser beam at the first side with an entry point along a scribe street thereof, in which the laser beam is focused inside the substrate to form at least one modified region within the substrate at a location spaced apart from the first side and at least one crack propagates from the modified region toward the first side. The method also includes electrically testing the dies on the substrate, in which the dies being tested are located between the modified regions of respective scribe streets of the substrate.

公开(公告)号：US20240312925A1

公开(公告)日：2024-09-19

申请号：US18204039

申请日：2023-05-31

申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.

发明人： Ping Mo ,  Xinru Zeng ,  Peng Chen ,  Xin Feng

IPC分类号： H01L23/544 ,  H01L21/268 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/58

CPC分类号： H01L23/544 ,  H01L21/268 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L2221/68327 ,  H01L2223/5446

摘要： The present disclosure provides a semiconductor device, a fabricating method thereof, a memory device and a memory system. The disclosed semiconductor device comprises a first device, a dicing street adjoining the first device laterally, a metal structure located in the dicing street, and a stealth cleavage lane extending in the dicing street. A first orthogonal projection of the stealth cleavage lane on a lateral cross-section of the dicing street is distant from a second orthogonal projection of the metal structure on the lateral cross-section of the dici

公开(公告)号：US20240312804A1

公开(公告)日：2024-09-19

申请号：US18261507

申请日：2022-01-04

申请人： Tokyo Electron Limited

发明人： Hayato TANOUE ,  Kento ARAKI ,  Yohei YAMASHITA ,  Gousuke SHIRAISHI

IPC分类号： H01L21/67 ,  H01L21/268 ,  H01L21/762

CPC分类号： H01L21/67092 ,  H01L21/268 ,  H01L21/76254

摘要： A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light in a pulse shape to a laser absorbing layer formed between the first substrate and the second substrate; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller sets an interval of the laser light radiated to the laser absorbing layer based on a thickness of the laser absorbing layer.

公开(公告)号：US20240274452A1

公开(公告)日：2024-08-15

申请号：US18567262

申请日：2022-05-30

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Kazunori HAGIMOTO ,  Shouzaburo GOTO

IPC分类号： H01L21/67 ,  H01L21/02 ,  H01L21/268 ,  H01L21/66

CPC分类号： H01L21/67282 ,  H01L21/0254 ,  H01L21/268 ,  H01L22/22

摘要： A wafer marking method uses a laser for performing a laser marking on a defect region of a nitride semiconductor substrate in which a nitride semiconductor layer contains at least a GaN layer formed by epitaxial growth on a single-crystal silicon substrate. The method includes that a surface of the GaN layer and a surface of the single-crystal silicon substrate are performed laser marking simultaneously by irradiating the defect region with a laser of a wavelength within ±10% of 365 nm, having a wavelength corresponding to a band gap energy of GaN.

公开(公告)号：US20240266220A1

公开(公告)日：2024-08-08

申请号：US18105390

申请日：2023-02-03

申请人： Applied Materials, Inc.

发明人： Jonathan Bryant MELLEN ,  Clinton GOH ,  Cheng SUN

IPC分类号： H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67 ,  H01L23/544

CPC分类号： H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67207 ,  H01L23/544 ,  H01J2237/022 ,  H01J2237/334 ,  H01L2223/5446

摘要： A method for dicing a die from a substrate for bonding that leverages laser and multiple etch processes. The method may include performing a laser cutting process to form a cut that removes a first portion of a dicing street in the substrate, performing a first plasma etch process to increase the laser kerf width to a first plasma etch width that is less than a dicing street width and to remove any non-silicon material from a bottom of the cut, and performing a second plasma etch process to increase the first plasma etch width to the dicing street width and to remove any remaining portion of the dicing street to completely separate the die from the substrate.

公开(公告)号：US12027591B2

公开(公告)日：2024-07-02

申请号：US17388200

申请日：2021-07-29

申请人： Infineon Technologies AG

发明人： Hans-Joachim Schulze ,  Roland Rupp

IPC分类号： H01L29/165 ,  H01L21/02 ,  H01L21/04 ,  H01L21/18 ,  H01L21/268

CPC分类号： H01L29/165 ,  H01L21/02378 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0455 ,  H01L21/187 ,  H01L21/268

摘要： A method of forming a semiconductor device and a semiconductor device are provided. The method includes forming a graphene layer at a first side of a silicon carbide substrate having at least next to the first side a first defect density of at most 5*102/cm2; attaching an acceptor layer at the graphene layer to form a wafer-stack, the acceptor layer comprising silicon carbide having a second defect density higher than the first defect density; forming an epitaxial silicon carbide layer; splitting the wafer-stack along a split plane in the silicon carbide substrate to form a device wafer comprising the graphene layer and a silicon carbide split layer at the graphene layer; and further processing the device wafer at the upper side.

公开(公告)号：US12027518B1

公开(公告)日：2024-07-02

申请号：US18603526

申请日：2024-03-13

申请人： Monolithic 3D Inc.

发明人： Zvi Or-Bach ,  Brian Cronquist

IPC分类号： H01L27/06 ,  G03F9/00 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/367 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/544 ,  H01L27/02 ,  H01L27/092 ,  H01L27/105 ,  H01L27/118 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/732 ,  H01L29/786 ,  H01L29/808 ,  H01L29/812 ,  H10B10/00 ,  H10B12/00 ,  H10B20/00 ,  H10B41/20 ,  H10B43/20 ,  H01L21/268 ,  H01L23/00 ,  H01L27/088

CPC分类号： H01L27/0688 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/544 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/105 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66272 ,  H01L29/66621 ,  H01L29/66848 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/78639 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/808 ,  H01L29/812 ,  H10B10/00 ,  H10B10/125 ,  H10B12/053 ,  H10B12/09 ,  H10B12/50 ,  H10B20/00 ,  H10B41/20 ,  H10B43/20 ,  H01L21/268 ,  H01L24/73 ,  H01L27/088 ,  H01L29/66545 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025

摘要： A semiconductor device including: a first silicon level including a first single crystal silicon layer and first transistors; a first metal layer disposed over it; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including second transistors, disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer, where the fourth metal layer is aligned to the first metal layer with a less than 240 nm alignment error; where the fifth metal layer includes global power delivery; each of the third transistors comprises a metal gate; a via disposed through the second level and the third level, where a typical thickness of the second metal layer is greater than a typical thickness of the third metal layer by at least 50%.

公开(公告)号：US12020936B2

公开(公告)日：2024-06-25

申请号：US17413605

申请日：2019-12-09

申请人： Tokyo Electron Limited

发明人： Hirotoshi Mori ,  Takeshi Tamura

IPC分类号： H01L21/268 ,  B23K26/57

CPC分类号： H01L21/268 ,  B23K26/57

摘要： A substrate processing apparatus configured to process a substrate includes a holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; and a modifying device configured to form, to an inside of the first substrate held by the holder, a peripheral modification layer by radiating laser light for periphery along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof, and, also, configured to form an internal modification layer by radiating laser light for internal surface along a plane direction of the first substrate. The modifying device switches the laser light for periphery and the laser light for internal surface by adjusting at least a shape or a number of the laser light for periphery and the laser light for internal surface.

公开(公告)号：US11978645B2

公开(公告)日：2024-05-07

申请号：US16941013

申请日：2020-07-28

申请人： DISCO CORPORATION

发明人： Masaru Nakamura

IPC分类号： H01L21/67 ,  B23K26/03 ,  B23K26/53 ,  G06T7/00 ,  G08B21/18 ,  H01L21/683 ,  B23K103/00 ,  H01L21/268 ,  H01L21/78

CPC分类号： H01L21/67092 ,  B23K26/032 ,  B23K26/53 ,  G06T7/001 ,  G08B21/182 ,  H01L21/67115 ,  H01L21/6836 ,  B23K2103/56 ,  G06T2207/30148 ,  H01L21/268 ,  H01L21/78 ,  H01L2221/68327

摘要： A control unit of a laser processing apparatus includes: a reference image storage section that images streets before formation of modified layers by an imaging unit and stores the captured image as a reference image; a calculation section that compares the reference image stored in the reference image storage section with an image of a wafer held by a chuck table that is captured by the imaging unit, and calculates the degree of agreement of the two images; and a decision section that decides whether the wafer is an unprocessed wafer not formed with the modified layers in the case where the degree of agreement calculated by the calculation section is more than a first predetermined value, and decides whether the wafer is a processed wafer formed with the modified layers in the case where the degree of agreement is equal to or less than a second predetermined value.