公开(公告)号：US12107125B2

公开(公告)日：2024-10-01

申请号：US17573790

申请日：2022-01-12

申请人： FLOSFIA INC.

发明人： Ryohei Kanno

IPC分类号： H01L29/12 ,  C23C16/40 ,  H01L29/739 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26

CPC分类号： H01L29/12 ,  C23C16/403 ,  H01L29/7393 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26

摘要： A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide semiconductor film on the base, the oxide semiconductor film including, as a major component, a metal oxide containing at least aluminum and gallium, wherein the oxide semiconductor film has a mobility of no less than 5 cm2/Vs.

公开(公告)号：US12062722B2

公开(公告)日：2024-08-13

申请号：US17164886

申请日：2021-02-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tatsuya Honda ,  Takehisa Hatano

IPC分类号： H01L29/786 ,  H01L29/00 ,  H01L29/04 ,  H01L29/12 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/772

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/00 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/20 ,  H01L29/22 ,  H01L29/26 ,  H01L29/772

摘要： Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

公开(公告)号：US12003631B2

公开(公告)日：2024-06-04

申请号：US18118694

申请日：2023-03-07

申请人： Crypto Quantique Limited

发明人： Shahram Mossayebi ,  Patrick Camilleri ,  Henry Edward William Montagu

IPC分类号： H04B10/00 ,  G06N10/00 ,  H01L23/00 ,  H04B10/07 ,  H04L9/08 ,  H04L9/32 ,  H01L29/12 ,  H01L29/423 ,  H01L29/66 ,  H04J14/00

CPC分类号： H04L9/0866 ,  G06N10/00 ,  H01L23/576 ,  H04B10/07 ,  H04L9/0852 ,  H04L9/3278 ,  H01L29/127 ,  H01L29/42324 ,  H01L29/66977

摘要： A method is provided for determining a unique identifier of a device, the device including a quantum tunnelling barrier unique to the device. The method comprises applying a potential difference across the quantrum tunnelling barrier, the potential difference sufficient to enable tunnelling barrier. The method further comprises measuring an electrical signal, the electrical signal representative of a tunnelling current through the quantrum tunnelling barrier. The method further comprises determining, from the measured electrical signal, a unique identifier for the device. Related apparatuses, systems, computer-readable media and methods are also provided herein.

公开(公告)号：US11990517B2

公开(公告)日：2024-05-21

申请号：US17699783

申请日：2022-03-21

申请人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

发明人： Woojong Yu ,  Thanh Luan Phan ,  Hyungjin Kim

IPC分类号： H01L29/12 ,  B82B1/00 ,  B82B3/00 ,  B82Y10/00

CPC分类号： H01L29/122 ,  B82B1/006 ,  B82B3/0028 ,  B82Y10/00

摘要： An electronic device is disclosed. The electronic device includes: a first electrode disposed on a substrate and extending in a first direction; a second electrode disposed above the first electrode and extending in a second direction intersecting the first direction; and at least one switching particle disposed between the first electrode and the second electrode and bonded to the first electrode and the second electrode via van der Waals bond, wherein the switching particle controls flow of current between the first electrode and the second electrode, based on a difference of voltages of the first electrode and the second electrode applied thereto.

公开(公告)号：US11935896B2

公开(公告)日：2024-03-19

申请号：US17740646

申请日：2022-05-10

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： G02F1/136 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/34 ,  G09G3/36 ,  H01L27/12 ,  H01L27/15 ,  H01L29/04 ,  H01L29/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L33/00 ,  G02F1/13357 ,  H10K59/121

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/136277 ,  G02F1/1368 ,  G09G3/3406 ,  G09G3/3648 ,  G09G3/3659 ,  H01L27/153 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  G02F1/1336 ,  G09G2300/08 ,  G09G2320/0214 ,  G09G2320/0626 ,  G09G2360/144 ,  H10K59/1213

摘要： Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/μm at room temperature and lower than 100 zA/μm at 85° C.

公开(公告)号：US11916103B2

公开(公告)日：2024-02-27

申请号：US17866747

申请日：2022-07-18

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

CPC分类号： H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/47 ,  H01L29/739 ,  H01L29/7391 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L33/26 ,  H02M3/28

摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US11888058B2

公开(公告)日：2024-01-30

申请号：US17229415

申请日：2021-04-13

申请人： ROHM CO., LTD.

发明人： Yuki Nakano

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/12 ,  H01L29/49 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/7813 ,  H01L29/06 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/12 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/4925 ,  H01L29/7811 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42368

摘要： The semiconductor device of the present invention includes a semiconductor layer which includes an active portion and a gate finger portion, an MIS transistor which is formed at the active portion and includes a gate trench as well as a source region, a channel region and a drain region sequentially along a side surface of the gate trench, a plurality of first gate finger trenches arranged by an extended portion of the gate trench at the gate finger portion, a gate electrode embedded each in the gate trench and the first gate finger trench, a second conductive-type first bottom-portion impurity region formed at least at a bottom portion of the first gate finger trench, a gate finger which crosses the plurality of first gate finger trenches and is electrically connected to the gate electrode, and a second conductive-type electric field relaxation region which is formed more deeply than the bottom portion of the first gate finger trench between the mutually adjacent first gate finger trenches.

公开(公告)号：US11871627B2

公开(公告)日：2024-01-09

申请号：US17532732

申请日：2021-11-22

申请人： Samsung Display Co., LTD.

发明人： Jun Hyun Park ,  Kang Moon Jo ,  Dong Woo Kim

IPC分类号： H01L29/12 ,  H10K59/131 ,  H10K59/121 ,  H01L27/12

CPC分类号： H10K59/131 ,  H10K59/1213 ,  H10K59/1216 ,  H01L27/124

摘要： A display device includes: a substrate; a first conductive layer including a lower pattern disposed on the substrate; an active layer including a first active pattern disposed on the first conductive layer; and a second conductive layer including a first gate electrode disposed on the active layer, wherein the first gate electrode overlaps a first channel region included in the first active pattern, the lower pattern overlaps the first active pattern, and the first active pattern does not cross an edge of the lower pattern.

公开(公告)号：US11843036B2

公开(公告)日：2023-12-12

申请号：US17532741

申请日：2021-11-22

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Shigeo Tokumitsu ,  Masaki Shiraishi ,  Yutaka Kato ,  Tetsuo Oda

IPC分类号： H01L29/40 ,  H01L21/02 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01L29/402 ,  H01L21/0214 ,  H01L21/02118 ,  H01L29/0619 ,  H01L29/12

摘要： Provided is a highly reliable semiconductor device in which an influence on device characteristics can be reduced while improving a high temperature and high humidity bias resistance of a termination structure (termination region) of a chip by a relatively simple method. The semiconductor device includes an active region disposed on a main surface of a semiconductor substrate, and a termination region disposed on the main surface so as to surround the active region. The termination region includes an interlayer insulating film formed on the main surface of the semiconductor substrate, and an organic protective film formed so as to cover the interlayer insulating film. An insulating film having a thickness of 100 nm or less and containing nitrogen is provided between the interlayer insulating film and the organic protective film.

公开(公告)号：US11822163B2

公开(公告)日：2023-11-21

申请号：US16446235

申请日：2019-06-19

申请人： equal1.labs Inc.

发明人： Dirk Robert Walter Leipold ,  George Adrian Maxim ,  Michael Albert Asker

IPC分类号： G06N10/00 ,  G06N10/40 ,  G06N10/70 ,  G02F1/017 ,  B82Y10/00 ,  H01L29/12 ,  H01L29/66 ,  H03K19/195 ,  B82Y15/00 ,  G06F1/20 ,  G06F11/07 ,  G06F15/16 ,  G06N99/00 ,  G11C19/32 ,  H01L21/02 ,  H01L27/088 ,  H01L29/15 ,  H01L29/417 ,  H01L33/04 ,  H03M1/34 ,  H03M1/66 ,  H03K3/38 ,  H03M13/15 ,  H10N60/10 ,  H10N69/00

CPC分类号： G02F1/01725 ,  B82Y10/00 ,  B82Y15/00 ,  G06F1/20 ,  G06F11/0724 ,  G06F11/0751 ,  G06F11/0793 ,  G06F15/16 ,  G06N10/00 ,  G06N10/70 ,  G06N99/00 ,  G11C19/32 ,  H01L21/02694 ,  H01L27/0883 ,  H01L29/122 ,  H01L29/157 ,  H01L29/41791 ,  H01L29/66977 ,  H01L29/66984 ,  H01L33/04 ,  H03K3/38 ,  H03K19/195 ,  H03M1/34 ,  H03M1/66 ,  H03M13/1575 ,  H10N60/11 ,  H10N60/128 ,  H10N69/00 ,  G02F1/01791

摘要： A novel and useful quantum computing machine includes classic computing and quantum computing cores. A programmable pattern generator executes instructions that control the quantum core. A pulse generator generates the control signals input to the quantum core to perform quantum operations. A partial readout of the quantum state is re-injected into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the readout before being re-injected into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or retrieved from classic memory where sequences of commands are stored in memory. A cryostat unit functions to cool the quantum computing core to approximately 4 Kelvin.