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公开(公告)号：US12114511B2
公开(公告)日：2024-10-08
申请号：US17462577
申请日：2021-08-31
发明人： Hui-Hsien Wei , Yen-Chung Ho , Chia-Jung Yu , Yong-Jie Wu , Pin-Cheng Hsu
摘要： A semiconductor device, an integrated circuit, and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a thin-film transistor (TFT) over the substrate, and a magnetoresistive random-access memory (MRAM) cell electrically coupled to the TFT. The TFT includes a gate electrode; a gate dielectric layer disposed over the gate electrode; source/drain electrodes disposed above the gate electrode; and an active layer disposed above the gate electrode. A protection layer is disposed between the TFT and the MRAM cell and electrically connects the MRAM cell to the TFT.
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公开(公告)号：US20240130247A1
公开(公告)日：2024-04-18
申请号：US18397344
申请日：2023-12-27
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki
IPC分类号： H10N52/00 , G01R33/09 , G11B5/39 , G11C11/16 , G11C11/18 , H01F10/32 , H01L27/105 , H01L29/82 , H03B15/00 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/01 , H10N52/80
CPC分类号： H10N52/00 , G01R33/098 , G11B5/39 , G11C11/161 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01F10/32 , H01F10/3254 , H01F10/329 , H01L27/105 , H01L29/82 , H03B15/00 , H03B15/006 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/01 , H10N52/80 , H01F10/3286
摘要： This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
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公开(公告)号：US11963458B2
公开(公告)日：2024-04-16
申请号：US16971797
申请日：2019-03-11
申请人： TOHOKU UNIVERSITY
发明人： Koichi Nishioka , Tetsuo Endoh , Shoji Ikeda , Hiroaki Honjo , Hideo Sato , Sadahiko Miura
IPC分类号： H01L27/22 , G11C11/16 , H01L27/105 , H01L29/82 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85
CPC分类号： H10N50/10 , G11C11/161 , H01L27/105 , H01L29/82 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
摘要： Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element.
The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).-
公开(公告)号：US11930717B2
公开(公告)日：2024-03-12
申请号：US17121523
申请日：2020-12-14
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H10N50/80 , G11C11/16 , H01F10/12 , H01F10/32 , H01F41/30 , H01L29/82 , H10B61/00 , H10N50/10 , H10N50/85
CPC分类号： H10N50/80 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F41/307 , H01L29/82 , H10B61/00 , H10B61/10 , H10N50/10 , H10N50/85 , H01F10/3286
摘要： A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.
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5.发明公开公开(公告)号：US20230371397A1
公开(公告)日：2023-11-16
申请号：US18359289
申请日：2023-07-26
发明人： Chern-Yow Hsu , Shih-Chang Liu
IPC分类号： H01L29/82
摘要： In some embodiments, the present disclosure relates to an integrated chip (IC), including a bottom electrode overlying an interconnect structure disposed within a lower inter-level dielectric (ILD) layer, a top electrode over the bottom electrode, a data storage structure between the top electrode from the bottom electrode, a conductive barrier layer overlying the interconnect structure, and a bottom electrode via (BEVA) vertically separating and contacting a bottom surface of the bottom electrode and a top surface of the conductive barrier layer. A maximum width of the BEVA is less than a width of the data storage structure.
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公开(公告)号：US11763841B2
公开(公告)日：2023-09-19
申请号：US17412394
申请日：2021-08-26
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki
IPC分类号： H01L29/82 , G11B5/39 , H01L27/105 , H10B61/00 , H10N50/10 , H10N50/85 , G11C11/16 , H01F10/193 , H01F1/40
CPC分类号： G11B5/3909 , G11B5/39 , G11C11/161 , H01F10/1936 , H01L27/105 , H10B61/22 , H10N50/10 , H10N50/85 , G11B2005/3996 , H01F1/405
摘要： A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.
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公开(公告)号：US11721724B2
公开(公告)日：2023-08-08
申请号：US17364985
申请日：2021-07-01
申请人： Intel Corporation
发明人： Nicole K. Thomas , James S. Clarke , Jessica M. Torres , Ravi Pillarisetty , Kanwaljit Singh , Payam Amin , Hubert C. George , Jeanette M. Roberts , Roman Caudillo , David J. Michalak , Zachary R. Yoscovits , Lester Lampert
IPC分类号： H01L29/12 , H01L21/8234 , H01L27/088 , H01L29/66 , H01L29/82
CPC分类号： H01L29/122 , H01L21/823431 , H01L27/0886 , H01L29/66977 , H01L29/66984 , H01L29/82
摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.
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8.发明授权公开(公告)号：US11677032B2
公开(公告)日：2023-06-13
申请号：US17806758
申请日：2022-06-14
CPC分类号： H01L29/82 , G01D5/147 , G01R33/0047 , G01R33/0052 , G01R33/06 , G01R15/207 , H01L2224/45147 , H01L2224/48247 , H01L2924/00011 , H01L2224/45147 , H01L2924/00 , H01L2924/00011 , H01L2924/01033
摘要： A sensor includes a lead frame having a first surface, a second opposing surface, and a plurality of leads and a semiconductor die having a first surface attached to the first surface of the lead frame and a second, opposing surface. The sensor further includes a non-conductive mold material enclosing the die and at least a portion of the lead frame, a conductive coil secured to the non-conductive mold material, a mold material secured to the non-conductive mold material and enclosing the conductive coil, wherein the mold material has a central region and an element disposed in the central region of the mold material.
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公开(公告)号：US11637237B2
公开(公告)日：2023-04-25
申请号：US17715477
申请日：2022-04-07
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki
IPC分类号： G11C11/16 , H01L43/06 , H01L43/08 , H03B15/00 , G11B5/39 , H01L29/82 , H01L27/105 , H01F10/32 , G11C11/18 , H01L43/04 , H01L27/22 , H01L43/02 , H01L43/10 , H01L43/14 , G01R33/09
摘要： This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
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10.发明授权公开(公告)号：US11616126B2
公开(公告)日：2023-03-28
申请号：US16143641
申请日：2018-09-27
申请人： Intel Corporation
发明人： Hubert C. George , Ravi Pillarisetty , Lester Lampert , James S. Clarke , Nicole K. Thomas , Roman Caudillo , David J. Michalak , Jeanette M. Roberts
IPC分类号： H01L29/12 , H01L29/66 , B82Y10/00 , G06N10/00 , H01L29/76 , H01L29/06 , H01L29/778 , H01L29/423 , H01L29/78 , H01L29/165 , H01L29/82 , H01L21/8234 , H01L29/16
摘要： A quantum dot device is disclosed that includes a quantum well stack, a first and a second plunger gates above the quantum well stack, and a passive barrier element provided in a portion of the quantum well stack between the first and the second plunger gates. The passive barrier element may serve as means for localizing charge in the quantum dot device and may be used to replace charge localization control by means of a barrier gate. In general, a quantum dot device with a plurality of plunger gates provided over a given quantum well stack may include a respective passive barrier element between any, or all, of adjacent plunger gates in the manner as described for the first and second plunger gates.
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