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公开(公告)号：US20240363785A1
公开(公告)日：2024-10-31
申请号：US18565924
申请日：2022-10-24
发明人： Lei XU , Jianfeng XUE , Kesheng WEI , Jin WANG
IPC分类号： H01L31/074 , H01L31/0336 , H01L31/18
CPC分类号： H01L31/074 , H01L31/0336 , H01L31/18
摘要： A conductive layer, comprising a first TCO layer, a second TCO layer, a third TCO layer and a fourth TCO layer which are stacked. The first TCO layer is prepared in a first atmosphere, and the first atmosphere is a mixed gas of argon and hydrogen; the second TCO layer is prepared in a second atmosphere, the second atmosphere is a mixed gas of argon, hydrogen, and oxygen, a partial pressure gradient of hydrogen is reduced, and a partial pressure gradient of oxygen is increased; the third TCO layer is prepared in a third atmosphere, and the third atmosphere is a mixed gas of argon and oxygen; the fourth TCO layer is prepared in a fourth atmosphere, the fourth atmosphere is a mixed gas of argon and oxygen, and a partial pressure gradient of oxygen is decreased.
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公开(公告)号：US20240363781A1
公开(公告)日：2024-10-31
申请号：US18685396
申请日：2022-09-09
发明人： Yaolun HUANG
IPC分类号： H01L31/05 , H01L31/0475 , H01L31/048 , H01L31/18 , H02S40/34
CPC分类号： H01L31/0512 , H01L31/0475 , H01L31/0481 , H01L31/186 , H02S40/34
摘要： The present invention relates to a flexible photovoltaic cell module and a manufacturing method thereof. The module includes a front panel, a rear panel and a photovoltaic cell layer encapsulated between the front panel and the rear panel, wherein the front panel and the rear panel are a flexible plate, the photovoltaic cell layer includes a plurality of photovoltaic cell units, the photovoltaic cell units are connected with each other in series and parallel through a flexible circuit layer, the photovoltaic cell unit is a single photovoltaic cell or a photovoltaic cell string, the flexible circuit layer is a metal foil circuit or a flexible flat cable between the front panel and the rear panel, or the flexible circuit layer is the front panel and/or the rear panel compounded with a flexible circuit. The method comprising the steps of firstly, typesetting the photovoltaic cell unit and the flexible circuit layer between the front panel and the rear panel, then carrying out lamination to obtain the photovoltaic cell module. The beneficial effect is that conductively connecting through the flexible circuit layer makes it possible to flexibly fold the crystalline silicon module in high-reliability and low-costs.
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公开(公告)号：US12132139B2
公开(公告)日：2024-10-29
申请号：US17771840
申请日：2020-10-05
发明人： Tomohiro Tsutsui , Akira Inoue , Chinatsu Sanda , Katsumi Ono
CPC分类号： H01L31/188 , H01L31/0504
摘要： A solar panel manufacturing apparatus includes a stage on which a substrate is placed, a pressing plate to press an adhesive applied on the substrate and thereby spread the adhesive via a solar cell arranged at a predetermined position on the adhesive, and to retain the position of the solar cell relative to the substrate, and a curing unit to cure only a part of the adhesive spread between the substrate and the solar cell, while the pressing plate is pressing the adhesive and retaining the position of the solar cell relative to the substrate.
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公开(公告)号：US12132138B2
公开(公告)日：2024-10-29
申请号：US18367235
申请日：2023-09-12
发明人： Kun Yu , Changming Liu , Xinyu Zhang
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/0368 , H01L31/068
CPC分类号： H01L31/1868 , H01L31/02366 , H01L31/03685 , H01L31/068 , H01L31/1824
摘要： Provided are a solar cell, including: a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.
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公开(公告)号：US12132131B2
公开(公告)日：2024-10-29
申请号：US17518600
申请日：2021-11-04
申请人： Sang Hwan Lee
发明人： Sang Hwan Lee
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0224 , H01L31/107 , H01L31/18
CPC分类号： H01L31/107 , H01L27/1464 , H01L27/14643 , H01L31/022408 , H01L31/18
摘要： Provided is a backside illuminated avalanche photodiode and a manufacturing method thereof. The backside illuminated avalanche photodiode comprises a semiconductor substrate; a semiconductor structure including a first semiconductor layer being arranged on a front surface of the semiconductor substrate and including a first conductivity type bottom electrical contact layer, a light absorption layer, and a multiplication layer, and a second semiconductor layer, stacked on the first semiconductor layer and including an etch stop layer and a second conductivity type top electrical conductivity layer stacked on the etch stop layer; a plurality of V-grooves in parallel with each other being formed by etching the top electrical contact layer; and a reflective top electrode formed by depositing a multi layer thin metal films on the top electrical contact layer wherein plurality of V-grooves parallel with each other are formed.
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公开(公告)号：US12132129B2
公开(公告)日：2024-10-29
申请号：US17759840
申请日：2021-02-15
IPC分类号： H01L31/0463 , G03F7/004 , H01L31/18
CPC分类号： H01L31/0463 , G03F7/0043 , H01L31/1828 , H01L31/1884
摘要： Disclosed herein are methods for using cracked film lithography (CFL) for patterning transparent conductive metal grids. CFL can be vacuum- and Ag-free, and it forms more durable grids than nanowire approaches.
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7.发明授权公开(公告)号：US12132128B2
公开(公告)日：2024-10-29
申请号：US18517160
申请日：2023-11-22
发明人： Kairui Lin , Chaohua Zhang
IPC分类号： H01L31/0236 , H01L31/02 , H01L31/0224 , H01L31/077 , H01L31/18
CPC分类号： H01L31/02366 , H01L31/0201 , H01L31/022441 , H01L31/022475 , H01L31/077 , H01L31/188 , H01L31/1888
摘要： A back-contact cell with isolation grooves specifically disposed and a preparation method thereof. The back-contact cell includes: a silicon substrate having, on a back side, a polished region and a textured region disposed alternately along an X-axis direction of the back side, a first semiconductor layer disposed on the polished region, and a second semiconductor layer disposed on the textured region. The back-contact cell further includes a conductive film layer and a conductive mask layer sequentially disposed outwardly along a Z-axis direction of the back side. A conductive composite layer formed by the conductive mask layer and the conductive film layer is provided with isolation grooves disposed at intervals along the X-axis direction. The isolation groove is located above a contact interface between the first semiconductor layer and the second semiconductor layer in the Z-axis direction, and the isolation groove spans part of the polished region and part of the textured region in the X-axis direction.
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公开(公告)号：US20240355952A1
公开(公告)日：2024-10-24
申请号：US18245943
申请日：2022-01-25
发明人： Wenliang WANG , Linhao LI , Guoqiang LI , Hongsheng JIANG
IPC分类号： H01L31/108 , H01L31/0304 , H01L31/18
CPC分类号： H01L31/108 , H01L31/03048 , H01L31/1848
摘要： The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlyGa1-yN layer, and an undoped N-polar plane AlxGa1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNz passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector′ in the UV solar-blind band.
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9.发明授权公开(公告)号：US12125936B2
公开(公告)日：2024-10-22
申请号：US17036318
申请日：2020-09-29
发明人： Xueting Yuan , Xinyu Zhang
IPC分类号： H01L31/18 , H01L31/0216
CPC分类号： H01L31/1868 , H01L31/02167
摘要： Provided is a method for passivating a silicon-based semiconductor device and a silicon-based semiconductor device. The method includes the following steps: cutting, by using a cutting process, a preset region of the silicon-based semiconductor device, to form a first surface associated with the preset region; smoothing the first surface to adjust a surface appearance of the first surface, so that a height difference between a protrusion and a recess of a non-marginal region on the first surface is less than 20 nm; and passivating the smoothed first surface to form a first passivation layer on the first surface. The present application can reduce or avoid the problem of efficiency reduction caused by cutting a silicon-based semiconductor device and help to obtain a more efficient silicon-based semiconductor device.
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公开(公告)号：US20240345481A1
公开(公告)日：2024-10-17
申请号：US18293927
申请日：2022-06-09
发明人： Hiroto Omori , Hitoshi Maruyama
CPC分类号： G03F7/038 , G03F7/0045 , H01L31/18 , H01L33/005
摘要： Provided is a polymer that includes a silphenylene skeleton, an isocyanuric acid skeleton, and a hydroxy-group-substituted alkyl ether skeleton in the main chain, and that includes an epoxy group in a side chain.
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