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公开(公告)号：US20240363823A1
公开(公告)日：2024-10-31
申请号：US18765364
申请日：2024-07-08
发明人： Wing Cheung Chong
CPC分类号： H01L33/62 , H01L33/0093 , H01L33/0095 , H01L33/04 , H01L33/382 , H01L33/54 , H01L2933/005 , H01L2933/0066
摘要： A LED structure includes a substrate, a bonding layer, a first doping type semiconductor layer, a multiple quantum well (MQW) layer, a second doping type semiconductor layer, a passivation layer and an electrode layer. The bonding layer is formed on the substrate, and the first doping type semiconductor layer is formed on the bonding layer. The MQW layer is formed on the first doping type semiconductor layer, and the second doping type semiconductor layer is formed on the MQW layer. The second doping type semiconductor layer includes an isolation material made through implantation, and the passivation layer is formed on the second doping type semiconductor layer. The electrode layer is formed on the passivation layer in contact with a portion of the second doping type semiconductor layer through a first opening on the passivation layer.
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公开(公告)号：US20240363806A1
公开(公告)日：2024-10-31
申请号：US18764922
申请日：2024-07-05
发明人： Dae Hyun KIM , Hyun Min CHO , Jin Oh KWAG , Keun Kyu SONG , Sung Chan JO
CPC分类号： H01L33/382 , H01L27/156 , H01L33/005 , H01L2933/0016
摘要： A display device includes a first electrode, a second electrode spaced apart from the first electrode to face the first electrode, a first insulation layer, at least one light emitting element, a second insulation layer, a first contact electrode, and a second contact electrode. The first insulation layer includes an overlapping area which overlaps the at least one light emitting element, a first non-overlapping area which extends outward from the first end of the at least one light emitting element and does not overlap the at least one light emitting element, and a second non-overlapping area which extends outward from the second end of the at least one light emitting element and does not overlap the at least one light emitting element.
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公开(公告)号：US20240363794A1
公开(公告)日：2024-10-31
申请号：US18770544
申请日：2024-07-11
申请人： LG DISPLAY CO., LTD.
发明人： ChungHwan AN , JinWoo PARK
IPC分类号： H01L33/00 , H01L25/075 , H01L33/20
CPC分类号： H01L33/0093 , H01L25/0753 , H01L33/20
摘要： A light emitting diode transfer method includes bonding a rigid substrate on which a plurality of light emitting diodes are formed and a flexible substrate, transferring the plurality of light emitting diodes to the flexible substrate, and detaching the rigid substrate and the flexible substrate. The detaching of the rigid substrate and the flexible substrate includes separating the rigid substrate and the flexible substrate in a state in which one surface of the rigid substrate is fixed and a portion among outermost portions of the flexible substrate is fixed by a fixing member. Accordingly, it is possible to reduce transfer defects of the plurality of light emitting diodes by detaching the flexible substrate and the rigid substrate in a line-by-line separation method.
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4.发明公开公开(公告)号：US20240363793A1
公开(公告)日：2024-10-31
申请号：US18769413
申请日：2024-07-11
发明人： Yun CHEN , Yanhui CHEN , Li MA , Hao ZHANG , Jintao CHEN , Maoxiang HOU , Xin CHEN
IPC分类号： H01L33/00
CPC分类号： H01L33/005
摘要： An ejector pin sliding on membrane-based device and method for mass transfer of mini light-emitting diodes (Mini-LEDs) are provided. The device includes a gantry transverse beam. The gantry transverse beam is provided with an ejector pin base, and the ejector pin base is configured to move along the gantry transverse beam. The ejector pin base is fixedly provided with a vision camera and an ejector pin. A blue membrane is horizontally provided at a side of the gantry transverse beam close to the ejector pin, and is spaced from the gantry beam. A surface of a side of the blue membrane away from the gantry transverse beam is adhesively provided with a plurality of Mini-LED chips arranged evenly. A transfer substrate is horizontally provided at a side of the blue membrane close to the plurality of Mini-LED chips, and is spaced from the blue membrane.
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公开(公告)号：US20240363416A1
公开(公告)日：2024-10-31
申请号：US18622105
申请日：2024-03-29
发明人： Soeren STEUDEL , Johan VERTOMMEN
IPC分类号： H01L21/78 , H01L21/02 , H01L21/304 , H01L21/683 , H01L33/00
CPC分类号： H01L21/7813 , H01L21/02274 , H01L21/304 , H01L21/6836 , H01L33/0093
摘要： A method (100) and a semiconductor structure are provided. The method comprises the steps of providing (101) a semiconductor structure comprising at least one epitaxial layer, and a substrate having a first thickness, removing (102) the at least one epitaxial layer from the substrate in a predefined pattern to form a plurality of epitaxial isles on the substrate, and thinning (103) the substrate from a surface opposite to the plurality of epitaxial isles to a second thickness.
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公开(公告)号：US20240360031A1
公开(公告)日：2024-10-31
申请号：US18443043
申请日：2024-02-15
发明人： SOUKJUNE HWANG , DONGJO KIM , HYUN KIM , SEONGGEUN WON , JEWON YOO , SEUNGMIN LEE , DANBI CHOI
CPC分类号： C03C15/00 , B24C1/04 , C03C23/002 , H01L33/005 , C03C2218/355 , H01L2933/005
摘要： In a method of manufacturing a display device, the method includes: forming a patterning film on a back surface of a glass; patterning the patterning film to expose a bending area of the glass; forming a groove overlapping the bending area on a back surface of the glass by providing abrasive particles to the exposed glass; forming an acid-resistant film on a front surface of the glass; and etching the glass.
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公开(公告)号：US12132158B2
公开(公告)日：2024-10-29
申请号：US17432429
申请日：2020-02-13
CPC分类号： H01L33/62 , H01L33/005 , H01L33/22 , H01L33/44 , H01L33/58 , H01L2933/0025 , H01L2933/0058 , H01L2933/0066
摘要： In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 μm, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.
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公开(公告)号：US12132154B2
公开(公告)日：2024-10-29
申请号：US17483118
申请日：2021-09-23
发明人： Dongkuk Lee , Daesup Kim , Dongmyung Shin , Wooseok Jang , Sunhwan Hwang
CPC分类号： H01L33/504 , H01L33/0095 , H01L33/60 , H01L33/62 , H01L2933/0041
摘要： A semiconductor light emitting device is provided. The device includes: an LED chip having a lower surface, an upper surface, and a side surface between the upper surface and the lower surface; first and second conductive bumps disposed on first and second conductive bumps provided on the lower surface; a first wavelength conversion layer having a first region provided on the upper surface of the LED chip and a second region which extends past the side surface of the LED chip; a second wavelength conversion layer having a first surface contacting the side surface of the LED chip, a second surface, a third surface connecting the first surface and the second surface, and contacting the second region, and a fourth surface located opposite to the third surface and inclined; and a reflective resin portion provided on the lower surface of the LED chip and the fourth surface.
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公开(公告)号：US12132143B2
公开(公告)日：2024-10-29
申请号：US18126487
申请日：2023-03-27
申请人： InnoLux Corporation
发明人： Hsiao-Lang Lin , Tsung-Han Tsai
IPC分类号： H01L33/00 , H01L25/075 , H01L33/50
CPC分类号： H01L33/0095 , H01L25/0753 , H01L33/502 , H01L2933/0041
摘要： The present disclosure provides a light emitting device including a substrate, a plurality of light emitting elements disposed on the substrate, a partition wall disposed on the substrate, a light conversion element, an encapsulation layer disposed on the light emitting element, an intermediate layer disposed between the light conversion element and one of the light emitting elements, and a protection layer disposed between the intermediate layer and the light emitting elements. The partition wall defines a plurality of cavities, and one of the cavities corresponds to one of the light emitting elements. The light conversion element is disposed in the one of the cavities.
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公开(公告)号：US20240355962A1
公开(公告)日：2024-10-24
申请号：US18304292
申请日：2023-04-20
发明人： Weihua Liu , Xiaobo Sun , Kai Cheng
CPC分类号： H01L33/12 , H01L33/007 , H01L33/06 , H01L33/32 , H01L33/36 , H01L2933/0016
摘要： The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; and a first semiconductor layer, a first stress releasing layer, an active layer and a second semiconductor layer that are sequentially stacked on the substrate from bottom to top; where conductive types of the first semiconductor layer and the second semiconductor layer are opposite, the first stress releasing layer comprises one or more periodic structures, each of the one or more periodic structures comprises a first group III nitride and a second group III nitride, and an In component content in the first group III nitride is different from an In component content in the second group III nitride. By the semiconductor structure provided in the present disclosure, an active layer with high In component content can be epitaxial grown while ensuring high crystal quality.
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