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公开(公告)号：US12119425B2
公开(公告)日：2024-10-15
申请号：US17655097
申请日：2022-03-16
发明人： Chihhung Hsiao , Yu-Ren Peng , Kunhuang Cai , Duxiang Wang , Chia-Hung Chang
CPC分类号： H01L33/08 , H01L33/0075 , H01L33/025 , H01L33/06 , H01L33/0093
摘要： A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a InzAlX1Ga1−X1As highly doped p-type semiconductor layer wherein z ranges from 0 to 0.05, a AlX2Ga1−X2As first composition graded layer wherein X2 is greater than 0 and less than X1, a GaYIn1−YP highly doped n-type semiconductor layer and a AlX3Ga1−X3As second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.
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2.发明公开公开(公告)号：US20240339561A1
公开(公告)日：2024-10-10
申请号：US18604563
申请日：2024-03-14
发明人： Ji Song CHAE , Dae Hyun KIM , Sang Ho PARK , Jae Woong YOO , Chul Jong YOO , Sang Hoon LEE , Joo Hee LEE , Jin Hyuk JANG , Sang Ho JEON , Seon Hong CHOI
CPC分类号： H01L33/025 , H01L25/167 , H01L33/0066 , H01L33/44 , H01L2933/0025
摘要： A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.
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公开(公告)号：US12095003B2
公开(公告)日：2024-09-17
申请号：US17489799
申请日：2021-09-30
发明人： Hsin-Chiao Fang , Jyun-De Wu
CPC分类号： H01L33/14 , H01L33/025 , H01L33/0095 , H01L33/305 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.
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公开(公告)号：US20240304758A1
公开(公告)日：2024-09-12
申请号：US18264606
申请日：2022-02-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
发明人： Bruno DAUDIN , Gwenole JACOPIN
CPC分类号： H01L33/325 , H01L27/156 , H01L33/0012 , H01L33/0075 , H01L33/025
摘要： A method for producing a display device comprising several pixels. The production of each pixel includes producing a stack forming p-i-n junctions of semiconductors corresponding to compounds comprising nitrogen and aluminium and/or gallium and/or indium atoms; implanting first, second and third rare earth ions respectively in first, second and third parts of a nest portion, through masks comprising first, second and third openings disposed respectively facing first, second and third regions of the stack respectively forming first, second and third light emission regions.
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公开(公告)号：US20240304751A1
公开(公告)日：2024-09-12
申请号：US18597935
申请日：2024-03-07
发明人： Takashi MIYATA , Yoji KITANO
CPC分类号： H01L33/025 , H01L33/32
摘要： Provided is a light-emitting device. A lamination body includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, and a third semiconductor layer being provided at the second semiconductor layer on a side opposite to the light-emitting layer. Electrical resistivity of the second semiconductor layer is higher than electrical resistivity of the third semiconductor layer. A first electrode is electrically coupled to the first semiconductor layer. A second electrode is electrically coupled to the third semiconductor layer. The lamination body includes a first portion and a second portion being in contact with the first portion. In the first portion, the first semiconductor layer, the light-emitting layer, the second semiconductor layer, and the third semiconductor layer overlap with each other. In the second portion, the first semiconductor layer, the light-emitting layer, and the second semiconductor layer overlap with each other, and the third semiconductor layer does not overlap therewith.
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6.发明公开公开(公告)号：US20240279844A1
公开(公告)日：2024-08-22
申请号：US18623278
申请日：2024-04-01
发明人： Kenji ISO , Tatsuya TAKAHASHI , Tae MOCHIZUKI , Yuuki ENATSU
IPC分类号： C30B29/40 , C23C16/34 , C30B25/20 , H01L21/02 , H01L29/04 , H01L29/20 , H01L29/36 , H01L33/00 , H01L33/02 , H01L33/16 , H01L33/32
CPC分类号： C30B29/406 , C23C16/34 , C30B25/20 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L29/045 , H01L29/2003 , H01L29/36 , H01L33/0075 , H01L33/025 , H01L33/16 , H01L33/32
摘要： Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.
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公开(公告)号：US12057525B2
公开(公告)日：2024-08-06
申请号：US17510481
申请日：2021-10-26
申请人： NIKKISO CO., LTD.
发明人： Yusuke Matsukura , Cyril Pernot
CPC分类号： H01L33/325 , H01L33/0075 , H01L33/025 , H01L33/145
摘要： A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer comprising at least one layer. The at least one layer of the electron blocking layer includes a peak-containing layer having an n-type impurity concentration peak in an n-type impurity concentration distribution along a stacking direction. The n-type impurity concentration peak appears as a local maximum in the n-type impurity concentration distribution along the stacking direction in the peak-containing layer and has an n-type impurity concentration of not less than 10 times a smallest value of the n-type impurity concentration in a region along the stacking direction between positions that are separated from a position of the peak in the stacking direction on both sides in the stacking direction by 10% of a thickness of the peak-containing layer.
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公开(公告)号：US12051767B2
公开(公告)日：2024-07-30
申请号：US18099583
申请日：2023-01-20
申请人： EPISTAR CORPORATION
发明人： Yen-Chun Tseng , Kuo-Feng Huang , Shih-Chang Lee , Ming-Ta Chin , Shih-Nan Yen , Cheng-Hsing Chiang , Chia-Hung Lin , Cheng-Long Yeh , Yi-Ching Lee , Jui-Che Sung , Shih-Hao Cheng
CPC分类号： H01L33/14 , H01L33/025 , H01L33/08 , H01L33/20
摘要： A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.
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9.发明公开公开(公告)号：US20240234626A9
公开(公告)日：2024-07-11
申请号：US18546582
申请日：2022-02-23
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/0095 , H01L33/025
摘要： In an embodiment a method for producing an optoelectronic semiconductor component includes A) providing a semiconductor body comprising, sequentially in a vertical direction, a first layer of a first conductivity type, an active layer formed as a quantum well structure provided for emission of electromagnetic radiation, and a second layer of a second conductivity type and B) irradiating the semiconductor body with a focused electromagnetic radiation such that a focus region of the electromagnetic radiation lies within the active layer and overlaps with the quantum well structure, wherein the electromagnetic radiation has an intensity which is sufficiently large in the focus region to cause point defects in the quantum well structure so that a defect region is formed and so that a generation of the point defects is limited to the focus region, and wherein a density of point defects in the first layer and the second layer is not changed in B).
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公开(公告)号：US20240204133A1
公开(公告)日：2024-06-20
申请号：US18554856
申请日：2022-03-01
发明人： Jinjian Zheng , Moran Gao , Jingfeng Bi , Weihong Fan , Jiaming Zeng , Chengjun Zhang
CPC分类号： H01L33/06 , H01L33/025 , H01L33/325 , A61L9/20 , C02F1/325 , C02F2303/04
摘要： A semiconductor light emitting element is provided and includes: a substrate, an n-type semiconductor layer, a doped quantum well layer, a control layer for suppressing light attenuation with age and a p-type semiconductor layer from bottom to top. The control layer for suppressing light attenuation with age sequentially includes an undoped quantum well layer having at least one undoped barrier layer, a first control layer for suppressing light attenuation and/or a second control layer for suppressing light attenuation from bottom to top. The present disclosure reduces probability of Si of the doped quantum well layer and Mg of the p-type semiconductor layer diffusing and coming into contact with each other during long-term aging process, thereby suppressing light attenuation with age of the semiconductor light emitting element. A light attenuation of 1000 hours is reduced from 30% or higher (even 50% or higher) to within 10%.
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