公开(公告)号：US12126139B2

公开(公告)日：2024-10-22

申请号：US18165825

申请日：2023-02-07

申请人： Silanna UV Technologies Pte Ltd

发明人： Johnny Cai Tang ,  Petar Atanackovic

IPC分类号： H01S5/227 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01S5/065 ,  H01S5/10 ,  H01S5/20 ,  H01S5/323 ,  H01L33/20 ,  H01L33/28 ,  H01S5/183 ,  H01S5/343

CPC分类号： H01S5/2275 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01S5/0655 ,  H01S5/1064 ,  H01S5/2004 ,  H01S5/32341 ,  H01L33/105 ,  H01L33/20 ,  H01L33/28 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01S5/183 ,  H01S5/34333

摘要： A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.

公开(公告)号：US12080827B2

公开(公告)日：2024-09-03

申请号：US18186037

申请日：2023-03-17

申请人： OSRAM OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC分类号： H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38

CPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38 ,  H01L33/42

摘要： In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

公开(公告)号：US20240290922A1

公开(公告)日：2024-08-29

申请号：US18572437

申请日：2022-03-11

申请人： SONY GROUP CORPORATION

发明人： KEIJI SUGI

IPC分类号： H01L33/60 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38

CPC分类号： H01L33/60 ,  H01L27/156 ,  H01L33/20 ,  H01L33/382

摘要： Reduction of the maximum luminance is suppressed. A semiconductor device according to an embodiment includes a light emitter (105) provided on an upper surface of a substrate, a metal microstructure (108) disposed on a side opposite to the substrate with the light emitter interposed therebetween and spaced apart from the light emitter by a predetermined distance, and a reflector (109) provided on the substrate so as to partition adjacent semiconductor devices.

公开(公告)号：US20240282888A1

公开(公告)日：2024-08-22

申请号：US18571080

申请日：2022-06-10

申请人： Google LLC

发明人： Aurelien Jean Francois David

IPC分类号： H01L33/20 ,  H01L27/15 ,  H01L33/46

CPC分类号： H01L33/20 ,  H01L27/15 ,  H01L33/46

摘要： A micro light-emitting diode, micro-LED, is configured to provide increased light-extraction. The micro-LED (300) according to the present disclosure has a lateral dimension less than 20 micrometres and comprises: a light-emitting layer (106), an output facet (308), an optical interface (via a mirror 114) parallel to the light-emitting layer, and a non-vertical sidewall (102) forming an angle with respect to a normal of the light-emitting layer. The layer (106) emits light (310) comprising a first light (312) in a first trajectory that escapes the micro-LED through the output facet (308) without reflecting off the optical interface and a second light (314) in a second trajectory that reflects off the optical interface and the non-vertical sidewall (102) and escapes through the output facet. The disclosed micro-LEDs may further include one or more of: cavity effects, light guiding, total internal reflection at low-index layers, mirrors, and micro-optics.

公开(公告)号：US12068434B2

公开(公告)日：2024-08-20

申请号：US17430392

申请日：2020-02-07

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Tatehito Kobayashi

IPC分类号： H01L21/00 ,  H01L25/13 ,  H01L33/20 ,  H01L33/62

CPC分类号： H01L33/20 ,  H01L25/13 ,  H01L33/62

摘要： A first semiconductor device of an embodiment of the present disclosure includes: a semiconductor substrate having one surface and another surface opposed to each other, and having a side length of 50 μm or more and 500 μm or less; a single or multiple bumps provided on the other surface; and a projection-and-depression structure formed in a side surface of the semiconductor substrate.

公开(公告)号：US20240234656A1

公开(公告)日：2024-07-11

申请号：US18536757

申请日：2023-12-12

申请人： SEOUL SEMICONDUCTOR CO., LTD.

发明人： Hye In KIM ,  Jung Hun SON

IPC分类号： H01L33/60 ,  H01L25/075 ,  H01L25/16 ,  H01L33/20 ,  H01L33/50

CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/20 ,  H01L33/502

摘要： The present disclosure relates to a light-emitting device. The light-emitting device includes a substrate, a first light-emitting chip, a first wavelength conversion member, and a barrier member. The first light-emitting chip is mounted on the substrate. The first wavelength conversion member covers the upper surface of the first light-emitting chip. A first reflective member covers the side surface of the first wavelength conversion member. Further, the barrier member includes an outer wall surrounding the side surfaces of the first light-emitting chip and the first reflective member.

公开(公告)号：US20240213403A1

公开(公告)日：2024-06-27

申请号：US18397702

申请日：2023-12-27

申请人： EPISTAR CORPORATION

发明人： Tien-Yu WANG ,  Yung-Hsiang LIN

IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/48 ,  H01L33/60

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/20 ,  H01L33/486 ,  H01L33/60

摘要： A semiconductor device includes a substrate having an upper surface, a buffer layer formed on the upper surface, and an element structure formed on the buffer layer. The substrate includes a plurality of holes extending from the upper surface of the substrate to an inside of the substrate and forming a plurality of openings at the upper surface of the substrate. In a cross-sectional view of the semiconductor device, at least two of the holes have different depths.

公开(公告)号：US20240186300A1

公开(公告)日：2024-06-06

申请号：US18436942

申请日：2024-02-08

申请人： SEOUL VIOSYS CO., LTD.

发明人： Seong Gyu JANG ,  Ho Joon LEE ,  Jong Hyeon CHAE ,  Chung Hoon LEE

IPC分类号： H01L25/13 ,  H01L25/075 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/62

CPC分类号： H01L25/13 ,  H01L25/0756 ,  H01L33/38 ,  H01L33/405 ,  H01L33/505 ,  H01L33/0093 ,  H01L33/20 ,  H01L33/62

摘要： A light emitting diode pixel for a display includes a first subpixel including a first LED sub-unit, a second subpixel including a second LED sub-unit, a third subpixel including a third LED sub-unit, and a bonding layer overlapping the first, second, and third subpixels, in which each of the first, second, and third LED sub-units includes a first type of semiconductor layer and a second type of semiconductor layer, each of the first, second, and third LED sub-units is disposed on a different plane, and light generated from the second subpixel is configured to be emitted to an outside of the light emitting diode pixel by passing through a lesser number of LED sub-units than light generated from the first subpixel and emitted to the outside.

公开(公告)号：US11984530B2

公开(公告)日：2024-05-14

申请号：US17235729

申请日：2021-04-20

申请人： CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.

发明人： Ching-Chung Chen

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： A light emitting diode (LED) structure includes a substrate, a first type semiconductor layer, a second type semiconductor layer, and a multi-quantum well light-emitting layer. The first type semiconductor layer is disposed on the substrate and has a patterned structure layer on a surface of the first type semiconductor layer away from the substrate. The multi-quantum well light-emitting layer is sandwiched between the patterned structure layer and the second type semiconductor layer and covers the patterned structure layer. The multi-quantum well light-emitting layer has multiple first thickness regions, multiple second thickness regions, and multiple transition regions. The first thickness region has a thickness greater than the second thickness region in a vertical direction from the first type semiconductor layer to the second type semiconductor layer. The transition region has a thickness that gradually decreases in a direction from the first thickness regions to the second thickness region.

公开(公告)号：US11978825B2

公开(公告)日：2024-05-07

申请号：US17388949

申请日：2021-07-29

申请人： Apple Inc.

发明人： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC分类号： H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/01 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

CPC分类号： H01L33/145 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/016 ,  H01L27/156 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/0016 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/20 ,  H01L2224/75305 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/82203 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.