公开(公告)号：US12125702B2

公开(公告)日：2024-10-22

申请号：US17754773

申请日：2020-10-13

申请人： DOWA Electronics Materials Co., Ltd.

发明人： Osamu Tanaka ,  Yoshitaka Kadowaki

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30

CPC分类号： H01L21/02395 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/22 ,  H01L33/305 ,  H01L33/0093

摘要： Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and the skewness Rsk of the surface is a positive value.

公开(公告)号：US12100780B2

公开(公告)日：2024-09-24

申请号：US17182015

申请日：2021-02-22

申请人： Korea Advanced Institute of Science and Technology

发明人： Sanghyeon Kim ,  Juhyuk Park ,  DaeMyeong Geum

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/04 ,  H01L33/30

CPC分类号： H01L33/04 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/30

摘要： Various embodiments may provide a highly efficient micro light-emitting diode (LED) in a low current range, a method of fabricating the same, and a display including the same. The micro LED includes a first conductive type semiconductor layer and a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a single quantum well structure. The single quantum well structure may be formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1.

公开(公告)号：US12095000B2

公开(公告)日：2024-09-17

申请号：US17035913

申请日：2020-09-29

申请人： Sensor Electronic Technology, Inc.

发明人： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC分类号： H01L33/06 ,  G06F30/30 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/64 ,  H01L33/38 ,  H01S5/30 ,  H01S5/343

CPC分类号： H01L33/06 ,  G06F30/30 ,  H01L31/02005 ,  H01L31/022466 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/035227 ,  H01L31/035236 ,  H01L31/0392 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/08 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/642 ,  H01L33/382 ,  H01L2933/0091 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/34333

摘要： An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

公开(公告)号：US20240297285A1

公开(公告)日：2024-09-05

申请号：US18440774

申请日：2024-02-13

申请人： Samsung Display Co., LTD.

发明人： Myeong Su SO ,  Ji Eun PARK

IPC分类号： H01L33/62 ,  H01L25/00 ,  H01L25/075 ,  H01L33/30

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L25/50 ,  H01L33/30

摘要： A display device may include: a substrate; a light emitting element on the substrate; a first pixel electrode on one area of the light emitting element and is electrically connected to the light emitting element; and a second pixel electrode on an other area of the light emitting element and is electrically connected to the light emitting element. The light emitting element may include: a first semiconductor layer, an active layer, and second and third semiconductor layers sequentially arranged along a first direction; and an insulative film covering outer surfaces of the first semiconductor layer, the active layer, and the second and third semiconductor layers. An opening exposing at least one side surface of the second semiconductor layer to the outside while penetrating the insulative film. The second pixel electrode may be in contact with the second semiconductor layer.

公开(公告)号：US20240297267A1

公开(公告)日：2024-09-05

申请号：US18280975

申请日：2022-03-16

申请人： Lumileds LLC

发明人： Robert Armitage

IPC分类号： H01L33/06 ,  H01L33/30

CPC分类号： H01L33/06 ,  H01L33/305

摘要： Described are light emitting diode (LED) devices including a quantum well comprising an indium gallium nitride (InGaN) well and a barrier layer. The indium gallium nitride (InGaN) well has an indium concentration greater than 18% mole fraction. The LED device has a dominant wavelength greater than 605 nm at a current density of greater than or equal to 2 A/cm2.

公开(公告)号：US12051678B2

公开(公告)日：2024-07-30

申请号：US17619564

申请日：2020-06-25

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Aledia ,  Universite Grenoble Alpes

发明人： Bruno-Jules Daudin ,  Walf Chikhaoui ,  Marion Gruart

IPC分类号： H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32

CPC分类号： H01L25/0753 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32

摘要： A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle α. The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle θIII and a flux of the group-V element along a direction inclined by an angle θV with respect to the vertical axis, angles θIII and θV being smaller than angle α.

公开(公告)号：US20240213399A1

公开(公告)日：2024-06-27

申请号：US17909785

申请日：2021-03-08

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Junya ISHIZAKI ,  Shogo FURUYA

IPC分类号： H01L33/00 ,  H01L33/30

CPC分类号： H01L33/0093 ,  H01L33/0062 ,  H01L33/30

摘要： A method for manufacturing a bonded wafer, the method including bonding a to-be-bonded wafer and a compound semiconductor wafer including a compound semiconductor epitaxially grown on a growth substrate. An area of a bonding surface of the to-be-bonded wafer is larger than an area of a bonding surface of the compound semiconductor wafer. The growth substrate is removed after the to-be-bonded wafer is bonded to the compound semiconductor wafer.

公开(公告)号：US20240204138A1

公开(公告)日：2024-06-20

申请号：US18589833

申请日：2024-02-28

申请人： OSRAM OLED GmbH

发明人： Anna Strozecka-Assig ,  Johannes Saric

IPC分类号： H01L33/38 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC分类号： H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30 ,  H01L2933/0016 ,  H01L2933/0025

摘要： In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror includes a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

公开(公告)号：US20240194723A1

公开(公告)日：2024-06-13

申请号：US18425644

申请日：2024-01-29

申请人： Lumileds LLC

发明人： Ashish Tandon ,  Rajat Sharma ,  Joseph Flemish ,  Andrei Papou ,  Wen Yu ,  Erik William Young ,  Yu-Chen Shen ,  Luke Gordon

IPC分类号： H01L27/15 ,  F21S41/153 ,  H01L33/00 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32 ,  H01L33/36 ,  H01L33/50 ,  H01S5/00

CPC分类号： H01L27/156 ,  F21S41/153 ,  H01L33/007 ,  H01L33/20 ,  H01L33/305 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01S5/00 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/32 ,  H01L33/36 ,  H01L2933/0016 ,  H01L2933/0041

摘要： A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

公开(公告)号：US12009384B2

公开(公告)日：2024-06-11

申请号：US17366462

申请日：2021-07-02

申请人： SEOUL VIOSYS CO., LTD.

发明人： Jong Hyeon Chae ,  Chung Hoon Lee ,  Seong Gyu Jang ,  Chang Yeon Kim ,  Ho Joon Lee

IPC分类号： H01L27/15 ,  H01L25/07 ,  H01L25/075 ,  H01L27/12 ,  H01L27/32 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H10K59/35 ,  H10K59/38 ,  G09G3/32 ,  H01L25/16 ,  H01L29/45 ,  H01L33/00 ,  H01L33/22 ,  H01L33/24 ,  H10K59/32 ,  H10K102/00

CPC分类号： H01L27/156 ,  H01L25/0756 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L33/504 ,  G09G3/32 ,  H01L25/167 ,  H01L27/1214 ,  H01L29/45 ,  H01L33/0008 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/60 ,  H10K59/32 ,  H10K59/35 ,  H10K59/352 ,  H10K59/353 ,  H10K59/38 ,  H10K2102/00

摘要： A light emitting diode (LED) stack for a display including a substrate, a first LED stack disposed on the substrate, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, a first color filter interposed between the first LED stack and the second LED stack, and a second color filter interposed between the second LED stack and the third LED stack, in which the second LED stack and the third LED stack are configured to transmit light generated from the first LED stack to the outside, and the third LED stack is configured to transmit light generated from the second LED stack to the outside.