公开(公告)号：US10011684B2

公开(公告)日：2018-07-03

申请号：US14747312

申请日：2015-06-23

申请人： Ricoh Company, Ltd.

发明人： Toshiya Sagisaka ,  Takashi Okada ,  Masaomi Sasaki ,  Masafumi Torii ,  Takuji Kato ,  Tamotsu Aruga ,  Satoshi Yamamoto ,  Daisuke Goto ,  Shinji Matsumoto

IPC分类号： H01L51/30 ,  C08G73/02 ,  C08G61/12 ,  C09D11/102 ,  C09D179/02 ,  H01L51/00 ,  C09K11/06 ,  H05B33/10 ,  H05B33/14 ,  H01L51/05

CPC分类号： C08G73/0266 ,  C08G61/12 ,  C08G73/02 ,  C08G73/026 ,  C08G2261/3162 ,  C08G2261/3422 ,  C08G2261/90 ,  C09D11/102 ,  C09D179/02 ,  C09K11/06 ,  C09K2211/1416 ,  C09K2211/1425 ,  C09K2211/1433 ,  C09K2211/1458 ,  H01L51/0035 ,  H01L51/0541 ,  H01L51/0545 ,  H05B33/10 ,  H05B33/14

摘要： A polymer containing a repeating unit expressed by General Formula (I): where Ar1 represents a substituted or unsubstituted aromatic hydrocarbon group; Ar2 and Ar3 independently represent a divalent group of a substituted or unsubstituted aromatic hydrocarbon group; and R1 and R2 each independently represent a hydrogen atom, substituted or unsubstituted alkyl group, or substituted or unsubstituted aromatic hydrocarbon group.

公开(公告)号：US09871215B2

公开(公告)日：2018-01-16

申请号：US15645208

申请日：2017-07-10

申请人： NIKON CORPORATION

发明人： Shohei Koizumi ,  Takashi Sugizaki ,  Yusuke Kawakami

IPC分类号： H01L51/30 ,  H01L51/05 ,  H01L51/00 ,  C23C18/32 ,  C23C18/31 ,  C23C18/20 ,  H01L29/786 ,  H01L29/49 ,  H01L21/8234

CPC分类号： H01L51/0529 ,  C23C18/2086 ,  C23C18/31 ,  C23C18/32 ,  H01L21/823437 ,  H01L21/823462 ,  H01L29/4908 ,  H01L29/786 ,  H01L51/0017 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/055

摘要： A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.

公开(公告)号：US09711745B2

公开(公告)日：2017-07-18

申请号：US13097136

申请日：2011-04-29

申请人： Hiroko Yamazaki

发明人： Hiroko Yamazaki

IPC分类号： H01L51/30 ,  H01L51/50 ,  H01L51/00

CPC分类号： H01L51/5016 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/005 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/5036

摘要： A high efficient white emission light emitting element having peak intensity in each wavelength region of red, green, and blue is provided. Specifically, a white emission light emitting element having an emission spectrum that is independent of current density is provided. A first light emitting layer 312 exhibiting blue emission and a second light emitting layer 313 containing a phosphorescent material that generates simultaneously phosphorescent emission and excimer emission are combined. In order to derive excimer emission from the phosphorescent material, it is effective to disperse a phosphorescent material 323 having a high planarity structure such as platinum complex at a high concentration of at least 10 wt % to a host material 322. Further, the first light emitting layer 312 is provided to be in contact with the second light emitting layer 313 at the side of an anode. Ionization potential of the second light emitting layer 313 is preferably larger by 0.4 eV than that of the first light emitting layer 312.

公开(公告)号：US09490432B2

公开(公告)日：2016-11-08

申请号：US12667440

申请日：2008-07-02

申请人： Olaf Zeika ,  Ina Faltin ,  Andrea Lux ,  Steffen Willmann

发明人： Olaf Zeika ,  Ina Faltin ,  Andrea Lux ,  Steffen Willmann

IPC分类号： H01L51/30 ,  C07C50/04 ,  C07C50/12 ,  C07C50/10 ,  C07D213/69 ,  C07D409/04 ,  C07D241/08 ,  C07D495/04 ,  C07D471/04 ,  H01L51/46 ,  H01L51/54 ,  H01L51/00 ,  C09K11/06

CPC分类号： H01L51/005 ,  C07C22/08 ,  C07C255/51 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1074 ,  C09K2211/1092 ,  H01L51/002 ,  H01L51/0051 ,  H01L51/5012 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5203 ,  Y02E10/549

摘要： The invention relates to quinoid compounds and their use in semiconductive matrix materials, electronic and optoelectronic structural elements.

摘要翻译： 本发明涉及醌型化合物及其在半导体基质材料，电子和光电结构元件中的应用。

公开(公告)号：US09412943B2

公开(公告)日：2016-08-09

申请号：US14842052

申请日：2015-09-01

申请人： Kabushiki Kaisha Toshiba

发明人： Koji Asakawa ,  Yutaka Majima ,  Hideyuki Nishizawa ,  Yusuke Tanaka ,  Shigeki Hattori

IPC分类号： H01L51/30 ,  H01L35/24 ,  H01L45/00

CPC分类号： H01L45/142 ,  G11C13/0014 ,  G11C2213/15 ,  G11C2213/30 ,  H01L27/28 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/14

摘要： An organic molecular memory in an embodiment includes a first conductive layer; a second conductive layer; and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer including an organic molecule having an oligophenylene ethynylene backbone, the oligophenylene ethynylene backbone including three or more benzene rings, and the oligophenylene ethynylene backbone including two fluorine atoms added in ortho positions or meta positions of one of the benzene rings other than benzene rings at both ends.

摘要翻译： 实施方案中的有机分子存储器包括第一导电层; 第二导电层; 以及设置在所述第一导电层和所述第二导电层之间的有机分子层，所述有机分子层包含具有低亚乙烯基亚乙炔主链的有机分子，所述低亚苯基亚乙炔主链包含三个以上的苯环，所述低聚亚乙炔主链包括两个氟 在两个苯环之外的苯环之一的邻位置或间位加成原子。

公开(公告)号：US09269764B2

公开(公告)日：2016-02-23

申请号：US13905527

申请日：2013-05-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jong-ryoul Ahn ,  Jeong-tak Seo ,  Ji-hoon Park ,  Cheol-ho Jeon

IPC分类号： H01L29/16 ,  H01L29/207 ,  H01L29/786 ,  H01L29/06 ,  H01L21/02 ,  H01L51/30 ,  H01L51/40 ,  H01L29/778 ,  C23C18/08 ,  B82Y99/00 ,  B82Y30/00

CPC分类号： H01L29/06 ,  B82Y30/00 ,  B82Y99/00 ,  C23C18/08 ,  H01L21/02104 ,  H01L21/02378 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/1606 ,  H01L29/778

摘要： A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene.

摘要翻译： 包括石墨烯和设置在石墨烯上的金属原子层的石墨烯半导体，其中金属原子层包括能够与石墨烯电荷转移的金属。

公开(公告)号：US09246111B1

公开(公告)日：2016-01-26

申请号：US14560352

申请日：2014-12-04

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Seul-Ong Kim ,  Youn-Sun Kim ,  Dong-Woo Shin ,  Jung-Sub Lee ,  Naoyuki Ito

IPC分类号： H01L51/05 ,  H01L51/30 ,  H01L51/54 ,  H01L51/52 ,  H01L51/50 ,  H01L21/312 ,  H01L51/00 ,  H01L27/32

CPC分类号： H01L51/0085 ,  H01L27/3244 ,  H01L51/0067 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5004 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2251/308 ,  H01L2251/552

摘要： An organic light-emitting device including a first electrode; a second electrode; and an organic layer, the organic layer including an emission layer, a hole transport region including a hole transport layer, a hole injection layer, or a buffer layer, and an electron transport region including a hole blocking layer, an electron transport layer, or an electron injection layer, wherein a triplet energy of a hole transport material of the hole transport layer is from about 2.4 to about 3.2 eV, an electron affinity of the hole transport material is from about 2.2 to about 2.6 eV; the triplet energy of the hole transport material is greater than a triplet energy of a dopant of the emission layer and a triplet energy of a host material of the emission layer, the host material of the emission layer includes the compound represented by Formula 1.

摘要翻译： 一种有机发光装置，包括：第一电极; 第二电极; 有机层，包括发光层的有机层，包括空穴传输层的空穴传输区域，空穴注入层或缓冲层，以及包含空穴阻挡层，电子传输层或电子传输层的电子传输区域 电子注入层，其中空穴传输层的空穴传输材料的三线态能为约2.4至约3.2eV，空穴传输材料的电子亲和力为约2.2至约2.6eV; 空穴传输材料的三线态能量大于发射层的掺杂剂的三线态能量和发射层的主体材料的三线态能量，发射层的主体材料包括由式1表示的化合物。

公开(公告)号：US09133211B2

公开(公告)日：2015-09-15

申请号：US13386454

申请日：2010-07-15

申请人： Toshiya Sagisaka ,  Satoshi Yamamoto ,  Takuji Kato ,  Takashi Okada ,  Masato Shinoda ,  Daisuke Goto ,  Shinji Matsumoto ,  Masataka Mohri

发明人： Toshiya Sagisaka ,  Satoshi Yamamoto ,  Takuji Kato ,  Takashi Okada ,  Masato Shinoda ,  Daisuke Goto ,  Shinji Matsumoto ,  Masataka Mohri

IPC分类号： H01L51/30 ,  C07D495/22 ,  H01L51/00 ,  H01L51/05

CPC分类号： C07D495/22 ,  H01L51/0074 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： To provide an organic semiconductive material, expressed by the following general formula I: General Formula I where R1 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group, and may be bonded to each other to form a ring; and X is a carbon atom or a nitrogen atom.

摘要翻译： 提供由以下通式I表示的有机半导体材料：通式I，其中R 1至R 10各自独立地为氢原子，取代或未取代的烷基，取代或未取代的烷氧基，取代或未取代的烷硫基， 或取代或未取代的芳基，并且可以彼此键合形成环; X为碳原子或氮原子。

公开(公告)号：US09102616B2

公开(公告)日：2015-08-11

申请号：US13508229

申请日：2010-10-29

申请人： Dongha Kim ,  Soungyun Mun ,  Jungcheol Park ,  Jinuk Ju ,  Jangyeol Baek ,  Wonsam Kim ,  Eunkyung Kim ,  Daehyuk Choi ,  Junghwan Park

发明人： Dongha Kim ,  Soungyun Mun ,  Jungcheol Park ,  Jinuk Ju ,  Jangyeol Baek ,  Wonsam Kim ,  Eunkyung Kim ,  Daehyuk Choi ,  Junghwan Park

IPC分类号： H01L51/54 ,  C07D209/80 ,  C07D209/86 ,  C07D471/06 ,  H01L51/30 ,  H01L51/46 ,  C07D403/04 ,  C07D405/04 ,  C07D405/14 ,  C07D409/04 ,  C07D409/10 ,  C07D409/14 ,  H01L51/00 ,  C09K11/06 ,  H05B33/10 ,  H01L51/50

CPC分类号： C07D209/80 ,  C07D209/86 ,  C07D403/04 ,  C07D405/04 ,  C07D405/14 ,  C07D409/04 ,  C07D409/10 ,  C07D409/14 ,  C07D471/06 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  C09K2211/1088 ,  C09K2211/1092 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/5012 ,  H01L51/5056 ,  H05B33/10 ,  Y02E10/549

摘要： Disclosed are an organic compound, an organic electronic device using the same, and a terminal thereof.

摘要翻译： 公开了有机化合物，使用该化合物的有机电子器件及其末端。

公开(公告)号：US09079879B2

公开(公告)日：2015-07-14

申请号：US13031734

申请日：2011-02-22

申请人： Hiroshi Kadoma ,  Nobuharu Ohsawa ,  Satoshi Seo

发明人： Hiroshi Kadoma ,  Nobuharu Ohsawa ,  Satoshi Seo

IPC分类号： H01L51/30 ,  C07D409/10 ,  C07D403/10 ,  C07D405/10 ,  C09K11/06 ,  H01L51/00 ,  H05B33/10 ,  H01L51/50

CPC分类号： H01L51/0072 ,  C07D403/10 ,  C07D405/10 ,  C07D409/10 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/1092 ,  H01L51/0052 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0067 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5048 ,  H01L51/5056 ,  H05B33/10

摘要： An object is to provide a novel heterocyclic compound which can be used for a light-emitting element, as a host material of a light-emitting layer in which a light-emitting substance is dispersed. Other objects are to provide a light-emitting element having low driving voltage, a light-emitting element having high current efficiency, and a light-emitting element having a long lifetime. Provided are a light-emitting element including a compound in which a dibenzo[f,h]quinoxaline ring and a hole-transport skeleton are bonded through an arylene group, and a light-emitting device, an electronic device, and a lighting device each using this light-emitting element. The heterocyclic compound represented by General Formula (G1) below is provided.

摘要翻译： 本发明的目的是提供一种可用于发光元件的新型杂环化合物，作为分散有发光物质的发光层的主体材料。 其他目的是提供一种具有低驱动电压的发光元件，具有高电流效率的发光元件和具有长寿命的发光元件。 本发明提供的发光元件包括二苯并[f，h]喹喔啉环和空穴传输骨架通过亚芳基键合的化合物，以及发光器件，电子器件和照明器件 使用该发光元件。 提供由下述通式（G1）表示的杂环化合物。