PHOTONIC CRYSTAL SURFACE-EMITTING LASER DEVICE AND OPTICAL SYSTEM

    公开(公告)号:US20230139244A1

    公开(公告)日:2023-05-04

    申请号:US17971790

    申请日:2022-10-24

    摘要: A photonic crystal surface-emitting laser device includes a substrate, a light emitting layer located on a surface of the substrate, a photonic crystal layer located on a side of the light emitting layer facing away from the substrate, and a metasurface located on a side of the substrate facing away from the photonic crystal layer. The light emitting layer is configured to generate photons. The photons incident into the photonic crystal layer generate laser light through a vibration on Bragg diffraction. The metasurface includes a base and a plurality of pillars arranged on a surface of the base at intervals, at least two of the plurality of pillars have different shapes and/or different sizes. The metasurface is configured to receiving the laser light, diffracting the laser light and then emitting the laser light. An optical system having the photonic crystal surface-emitting laser device is also provided.

    Semiconductor light-emitting module and control method therefor

    公开(公告)号:US11502481B2

    公开(公告)日:2022-11-15

    申请号:US16432198

    申请日:2019-06-05

    摘要: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

    TWO-DIMENSIONAL PHOTONIC-CRYSTAL SURFACE-EMITTING LASER

    公开(公告)号:US20220131343A1

    公开(公告)日:2022-04-28

    申请号:US17430852

    申请日:2020-02-04

    申请人: KYOTO UNIVERSITY

    IPC分类号: H01S5/11 H01S5/18

    摘要: A two-dimensional photonic-crystal surface-emitting laser includes an active layer; and a photonic-crystal layer including a two-dimensional photonic-crystal light-amplification portion that is a first two-dimensional photonic-crystal region provided in a plate-shaped base body disposed on one side of the active layer, and includes an amplification-portion photonic band gap which is a photonic band gap formed between two photonic bands having a band edge at a predetermined point in a reciprocal lattice space, and a two-dimensional photonic-crystal light-reflection portion that is a second two-dimensional photonic-crystal region provided around the two-dimensional photonic-crystal light-amplification portion, and includes a reflection-portion photonic band gap which is a photonic band gap formed between two photonic bands having a band edge at the predetermined point of the reciprocal lattice space, wherein energy ranges of the amplification-portion photonic band gap and the reflection-portion photonic band gap partially overlap and are different.

    Optical device having a substrate and a laser unit that emits light into the substrate

    公开(公告)号:US11075500B2

    公开(公告)日:2021-07-27

    申请号:US16145349

    申请日:2018-09-28

    摘要: An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough.

    DOUBLE ETCH STOP LAYER TO PROTECT SEMICONDUCTOR DEVICE LAYERS FROM WET CHEMICAL ETCH

    公开(公告)号:US20210082866A1

    公开(公告)日:2021-03-18

    申请号:US16568605

    申请日:2019-09-12

    摘要: In some embodiments, the present disclosure relates to a method of forming a package assembly. A wet etch stop layer is formed over a frontside of a semiconductor substrate. A sacrificial semiconductor layer is formed over the wet etch stop layer, and a dry etch stop layer is formed over the sacrificial semiconductor layer. A stack of semiconductor device layers may be formed over the dry etch stop layer. A bonding process is performed to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die. A wet etching process is performed to remove the semiconductor substrate, and a dry etching process is performed to remove the wet etch stop layer and the sacrificial semiconductor layer.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    8.
    发明申请

    公开(公告)号:US20200287350A1

    公开(公告)日:2020-09-10

    申请号:US16756513

    申请日:2018-10-02

    IPC分类号: H01S5/18 H01S5/10 H01S3/00

    摘要: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.

    Two-dimensional photonic crystal surface emitting laser

    公开(公告)号:US10461501B2

    公开(公告)日:2019-10-29

    申请号:US15505560

    申请日:2015-08-28

    摘要: To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser 10X includes: a two-dimensional photonic crystal 123 including a plate-shaped base member 121 and modified refractive index regions 122 where the modified refractive index regions 122 have a refractive index different from that of the plate-shaped base member 121 and are two-dimensionally and periodically arranged in the base member; an active layer 11 provided on one side of the two-dimensional photonic crystal 123; and a first electrode 15A and a second electrode 16 provided sandwiching the two-dimensional photonic crystal 123 and the active layer 11 for supplying current to the active layer 11, where the second electrode 16 covers a region equal to or wider than the first electrode 15A, wherein the first electrode 15A is formed so as to supply the current to the active layer 11 with a different density depending on the in-plane position on the first electrode 15A.

    Surface-emitting quantum cascade laser

    公开(公告)号:US10447012B2

    公开(公告)日:2019-10-15

    申请号:US16189148

    申请日:2018-11-13

    摘要: A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.